Patents by Inventor Kazutoshi Iwai

Kazutoshi Iwai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9523153
    Abstract: A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: December 20, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takashi Tanaka, Yuichiro Inatomi, Kazutoshi Iwai, Mitsuaki Iwashita
  • Patent number: 9428835
    Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: August 30, 2016
    Assignees: GAS-PHASE GROWTH LTD., Tokyo Electron Limited
    Inventors: Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yumiko Kawano, Kazutoshi Iwai
  • Publication number: 20160247765
    Abstract: Adhesivity between a catalyst adsorption layer on a substrate and a barrier metal plating layer can be improved. The catalyst adsorption layer 22 containing a catalyst metal is formed on the substrate 2 by supplying a catalyst solution onto the substrate 2, and a bonding metal layer 22A containing a bonding metal different from the catalyst metal is formed on the catalyst adsorption layer 22 by performing a plating process with the catalyst metal as a catalyst. A barrier metal plating layer 23 is formed on the bonding metal layer 22A by performing a plating process with the bonding metal as a catalyst.
    Type: Application
    Filed: February 19, 2016
    Publication date: August 25, 2016
    Inventors: Yuichiro Inatomi, Takashi Tanaka, Nobutaka Mizutani, Yusuke Saito, Kazutoshi Iwai, Mitsuaki Iwashita
  • Publication number: 20160247683
    Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.
    Type: Application
    Filed: February 19, 2016
    Publication date: August 25, 2016
    Inventors: Yuichiro Inatomi, Takashi Tanaka, Nobutaka Mizutani, Yusuke Saito, Kazutoshi Iwai, Mitsuaki Iwashita
  • Publication number: 20150247242
    Abstract: A pre-treatment method of plating and a plating system can perform a uniform plating process in which sufficient adhesivity on a surface of a substrate is obtained. The pre-treatment method of plating includes a coupling layer forming process of forming a titanium-based coupling layer 21b on the surface of the substrate with a titanium coupling agent; and a coupling layer modification process of modifying a surface of the titanium-based coupling layer 21b with a modifying liquid after the coupling layer forming process.
    Type: Application
    Filed: February 27, 2015
    Publication date: September 3, 2015
    Inventors: Kazutoshi Iwai, Nobutaka Mizutani, Mitsuaki Iwashita
  • Publication number: 20150140209
    Abstract: A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.
    Type: Application
    Filed: November 20, 2014
    Publication date: May 21, 2015
    Inventors: Takashi Tanaka, Yuichiro Inatomi, Kazutoshi Iwai, Mitsuaki Iwashita
  • Publication number: 20140248427
    Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.
    Type: Application
    Filed: October 4, 2012
    Publication date: September 4, 2014
    Applicants: Tokyo Electron Limited, GAS-PHASE GROWTH LTD.
    Inventors: Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yumiko Kawano, Kazutoshi Iwai