Abstract: There is provided a laminated substrate having a piezoelectric film, including: a substrate; and a piezoelectric film provided on the substrate interposing a base film, wherein the piezoelectric film has an alkali niobium oxide based perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0<x<1) and preferentially oriented in (001) plane direction, and a sound speed of the piezoelectric film is 5100 m/s or more.

Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

Abstract: There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film is a film containing an alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0<x<1), and having Young's modulus of less than 100 GPa.

Abstract: There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode intermediate layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K1-xNax)NbO3, 0.4?x?0.7); the upper electrode layer is made of aluminum or an aluminum alloy; the upper electrode intermediate layer is made of a metal that has less oxidizability than titanium and can generate an intermetallic compound with Aluminum; and a part of the upper electrode intermediate layer and a part of the upper electrode layer are alloyed.

Abstract: To avoid applying overload on both a probe and a sample surface, and to reduce time for measuring irregular shapes on the sample surface in performing an intermittent measurement method, provided is a scanning probe microscope including: a cantilever having a probe attached thereto, the scanning probe microscope being configured to scan a sample surface by intermittently bringing the probe into contact with the sample surface; and a control device configured to perform a first operation of bringing the probe and the sample surface into contact with each other, and a second operation of separating the probe and the sample surface from each other after the first operation. The control device executes the second operation by thermally deforming the cantilever.

Abstract: There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film contains an alkali niobium oxide represented by a composition formula of (K1?xNax)NbO3 (0<x<1), having a perovskite structure, and contains a metallic element selected from a group consisting of Cu and Mn at a concentration of more than 0.6 at % and 2.0 at % or less.

Abstract: A scanning probe microscope has a cantilever having a probe at a tip of the cantilever, a driving unit that performs a separating operation for separating one of the sample and the probe from the other at a speed exceeding a response speed of the cantilever from a state where the probe is in contact with the surface of the sample, a determination unit that determines that the probe is separated from the surface of the sample when vibration of the cantilever at a predetermined amplitude is detected at a resonant frequency of the cantilever during the separating operation, and a driving control unit that stops the separating operation when the determination unit determines that the probe is separated from the surface of the sample and relatively moves the probe and the sample to a position where the probe is located on a next measuring point of the sample.

Abstract: There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesive layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K1-xNax)NbO3, 0.4?x?0.7); the upper electrode layer is made of gold; the upper electrode adhesive layer is made of a metal that has less oxidizability than titanium and can make a solid solution alloy without generating an intermetallic compound with gold; and a part of the upper electrode adhesive layer and a part of the upper electrode layer are alloyed.

Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

Abstract: This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.

Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

Abstract: There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.

Abstract: This method for manufacturing a niobate-system ferroelectric thin-film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film, the etch mask being an amorphous fluororesin film laminated via a noble metal film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a chelating agent; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

Abstract: A three-dimensional fine movement device includes a moving body, a fixation member to which the moving body is fixed, a three-dimensional fine movement unit, to which the fixation member is fixed, and which allows for three-dimensional fine movement of the moving body with the fixation member interposed therebetween, a base member to which the three-dimensional fine movement unit is fixed, and movement amount detecting means that is fixed to the base member to detect a movement amount of the fixation member.

Abstract: According to this invention, a scanning probe microscope for scanning a surface of a sample with a probe by bringing the probe into contact with the surface of the sample, comprises a cantilever having the probe at its tip; a displacement detection unit to detect both a bending amount and a torsion amount of the cantilever; and a contact determination unit to determine a primary contact of the probe with the surface of the sample, based on the bending amount and the torsion amount detected by the displacement detection unit in all directions from an undeformed condition of the cantilever.

Abstract: There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K1?xNax) NbO 3 (0<x<1), having a perovskite structure, and oriented preferentially in (001) plane direction, and contains a metallic element selected from a group consisting of Mn and Cu at a concentration of 0.2 at % or more and 0.6 at % or less.

Abstract: A scanning probe microscope has a cantilever having a probe at a tip of the cantilever, a driving unit that performs a separating operation for separating one of the sample and the probe from the other at a speed exceeding a response speed of the cantilever from a state where the probe is in contact with the surface of the sample, a determination unit that determines that the probe is separated from the surface of the sample when vibration of the cantilever at a predetermined amplitude is detected at a resonant frequency of the cantilever during the separating operation, and a driving control unit that stops the separating operation when the determination unit determines that the probe is separated from the surface of the sample and relatively moves the probe and the sample to a position where the probe is located on a next measuring point of the sample.

Abstract: There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode intermediate layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K1-xNax)NbO3, 0.4?x?0.7); the upper electrode layer is made of aluminum or an aluminum alloy; the upper electrode intermediate layer is made of a metal that has less oxidizability than titanium and can generate an intermetallic compound with Aluminum; and a part of the upper electrode intermediate layer and a part of the upper electrode layer are alloyed.

Abstract: This method for manufacturing a niobate-system ferroelectric thin-film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film, the etch mask being an amorphous fluororesin film laminated via a noble metal film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a chelating agent; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

Abstract: There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesive layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K1-xNax)NbO3, 0.4?x?0.7); the upper electrode layer is made of gold; the upper electrode adhesive layer is made of a metal that has less oxidizability than titanium and can make a solid solution alloy without generating an intermetallic compound with gold; and a part of the upper electrode adhesive layer and a part of the upper electrode layer are alloyed.