Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Abstract: Embodiments described herein provide for a fluid management system and a method of utilizing the fluid management system. The fluid management system includes a servicing fluid management system and an ink management system. The servicing fluid management system and the ink management system run in parallel within an inkjet chamber. The ink management system supports the flow of inkjet materials between a waste tank, one or more inkjet material supply tanks, an ink management module, and the inkjet printer. The servicing fluid management system supports the flow of servicing fluids between the waste tank, one or more servicing fluid supply tanks, a servicing fluid management module, and the inkjet printer.

Abstract: Embodiments described herein relate to an inkjet printing platform. The inkjet printing platform is utilized for fabrication of optical films and optical device structures. The inkjet printing platform includes a transfer chamber, one or more inkjet chambers, a plurality of auxiliary modules, a substrate flipper, and load ports. The inkjet printing platform is operable to perform an inkjet printing process on a substrate to form an optical film and/or an optical device.

Abstract: Apparatus for processing a semiconductor substrate are described herein. The apparatus include an electrostatic chuck within a physical vapor deposition process chamber. The electrostatic chuck is covered by a cover plate and has an edge ring disposed around the cover plate. The cover plate includes an alignment portion as well as a central support. An outer ring may extend from the cover plate to further support a substrate. A spacer is utilized to raise the edge ring to an appropriate height for processing of an optical device in the physical vapor deposition process chamber.

Abstract: Embodiments described herein relate to an inkjet service station and methods of servicing an inkjet printer with the inkjet service station. The inkjet service station is disposed in an inkjet printer of an inkjet chamber. The inkjet service station is operable to perform servicing operations on a processing apparatus of the inkjet printer. The servicing operations include at least one of printhead spitting, printhead purging, printhead flushing, printhead cleaning, printhead drying, or vacuum suction.

Abstract: A method of optical device metrology is provided. The method includes providing a first type of light into a first optical device during a first time period; measuring a quantity of the first type of light transmitted from a first location on the top surface or the bottom surface during the first time period; coating at least a portion of an edge of the one or more edges with a first coating of optically absorbent material during a second time period that occurs after the first time period; providing the first type of light into the first optical device during a third time period that occurs after the second time period; and measuring a quantity of the first type of light transmitted from the first location on the top surface or the bottom surface during the third time period.

Abstract: Embodiments of the present disclosure relate to optical devices for augmented, virtual, and/or mixed reality applications. In one or more embodiments, an optical device metrology system is configured to measure a plurality of see-through metrics for optical devices.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.

Abstract: Embodiments described herein relate to an inkjet service station and methods of servicing an inkjet printer with the inkjet service station. The inkjet service station is disposed in an inkjet printer of an inkjet chamber. The inkjet service station is operable to perform servicing operations on a processing apparatus of the inkjet printer. The servicing operations include at least one of printhead spitting, printhead purging, printhead flushing, printhead cleaning, printhead drying, or vacuum suction.

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Embodiments described herein relate to an inkjet printing platform. The inkjet printing platform is utilized for fabrication of optical films and optical device structures. The inkjet printing platform includes a transfer chamber, one or more inkjet chambers, a plurality of auxiliary modules, a substrate flipper, and load ports. The inkjet printing platform is operable to perform an inkjet printing process on a substrate to form an optical film and/or an optical device.

Abstract: Embodiments described herein provide for a fluid management system and a method of utilizing the fluid management system. The fluid management system includes a servicing fluid management system and an ink management system. The servicing fluid management system and the ink management system run in parallel within an inkjet chamber. The ink management system supports the flow of inkjet materials between a waste tank, one or more inkjet material supply tanks, an ink management module, and the inkjet printer. The servicing fluid management system supports the flow of servicing fluids between the waste tank, one or more servicing fluid supply tanks, a servicing fluid management module, and the inkjet printer.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Abstract: Embodiments of the present disclosure relate to measurement systems and methods of measuring efficiency of optical devices. In one example, the measurement systems include a light source, a mirror, an illumination source, and a sensor. The light source provides a light beam to the optical device to be diffracted into diffraction beams having diffraction orders. The diffractions beams form a diffraction pattern. The method includes positioning the optical device in the measurement system and directing the diffraction beams to the sensor. The sensor is operable to measure the efficiency of the optical device by measuring the diffraction pattern.

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.