Abstract: A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 ?m.

Abstract: A gas purifying apparatus for removing particles from a gas. The gas purifying apparatus includes a first filter layer and a second filter layer, and the diameter of a fiber forming the first filter layer is larger than that of a fiber forming the second filter layer. A semiconductor manufacturing apparatus can use such a gas purifying apparatus.

Abstract: A disclosed method of analyzing a quartz member includes steps of supplying an etchant to an etchant receiving portion formed concavely in the quartz member so as to etch the quartz member; and analyzing the etchant used in the supplying step.

Abstract: In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.

Abstract: A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

Abstract: In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.

Abstract: A process chamber having an insulative substance adhering thereto is heated to not lower than 300° C. nor higher than 450° C. and a cleaning gas containing ? diketone and one of water and alcohol is supplied into the process chamber. When the cleaning gas supplied into the process chamber adheres to an inner wall of the process chamber and a susceptor to be in contact with the insulative substance, a complex of a substance composing the insulative substance is formed. The complex easily vaporizes owing to a high vapor pressure, to be discharged out of the process chamber by the exhaust of the inside of the process chamber.