Abstract: A semiconductor package includes a lead frame, a semiconductor chip, a plurality of three-dimensional wrings, and a mold resin. The semiconductor chip is mounted on the lead frame. The mold resin covers a part of the lead frame, the semiconductor chip, and a part of each of the plurality of three-dimensional wirings.

Abstract: A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

Abstract: A semiconductor package includes a lead frame, a semiconductor chip, a plurality of three-dimensional wrings, and a mold resin. The semiconductor chip is mounted on the lead frame. The mold resin covers a part of the lead frame, the semiconductor chip, and a part of each of the plurality of three-dimensional wirings.

Abstract: Instead of insert molding a mold member with a resin case to integrate it, a filler is filled into a first opening formed in the resin case while the mold member is disposed therein, whereby integration is performed. This makes it possible to suppress peeling between the mold member and the resin case due to a thermal cycle, and also makes it possible to suppress leakage of a measurement medium to the outside through a gap between the mold member and the resin case.

Abstract: A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

Abstract: A thermally conductive sheet of the present invention includes a thermosetting resin (A), and an inorganic filler material (B) which is dispersed in the thermosetting resin (A). In the thermally conductive sheet according to the present invention, the volume resistivity of the cured product of the thermally conductive sheet, which is measured one minute later after an applied voltage of 1000 V is applied thereto on the basis of JIS K 6911 and at a temperature of 175° C., is greater than or equal to 1.0×108 ?·m.

Abstract: Instead of insert molding a mold member with a resin case to integrate it, a filler is filled into a first opening formed in the resin case while the mold member is disposed therein, whereby integration is performed. This makes it possible to suppress peeling between the mold member and the resin case due to a thermal cycle, and also makes it possible to suppress leakage of a measurement medium to the outside through a gap between the mold member and the resin case.

Abstract: A thermally conductive sheet of the present invention includes a thermosetting resin (A) and an inorganic filler material (B) that is dispersed in the thermosetting resin (A). In the thermally conductive sheet of the present invention, at a frequency of 1 kHz and at a temperature of 100° C. to 175° C., the maximum value of a dielectric loss factor of a cured product of the thermally conductive sheet is less than or equal to 0.030, and a change in relative dielectric constant of the cured product of the thermally conductive sheet is less than or equal to 0.10.

Abstract: A thermally conductive sheet of the present invention includes a thermosetting resin (A), and an inorganic filler material (B) which is dispersed in the thermosetting resin (A). In the thermally conductive sheet according to the present invention, the volume resistivity of the cured product of the thermally conductive sheet, which is measured one minute later after an applied voltage of 1000 V is applied thereto on the basis of JIS K 6911 and at a temperature of 175° C., is greater than or equal to 1.0×108 ?·m.

Abstract: A thermally conductive sheet of the present invention includes a thermosetting resin (A) and an inorganic filler material (B) that is dispersed in the thermosetting resin (A). In the thermally conductive sheet of the present invention, at a frequency of 1 kHz and at a temperature of 100° C. to 175° C., the maximum value of a dielectric loss factor of a cured product of the thermally conductive sheet is less than or equal to 0.030, and a change in relative dielectric constant of the cured product of the thermally conductive sheet is less than or equal to 0.10.

Abstract: A resin composition for a thermally conductive sheet includes a thermosetting resin and a filler dispersed in the thermosetting resin. The filler includes secondary agglomerated particles satisfying the following conditions: a void is formed in the central portion; a communicating pore which begins from the void and communicates with the outer surface of the secondary agglomerated particle is formed; and the ratio of the average pore diameter of the communicating pores to the average void diameter of the voids is equal to or more than 0.05 and equal to or less than 1.0.

Abstract: A thermally conductive sheet includes a thermosetting resin (A) and an inorganic filler material (B) which is dispersed in the thermosetting resin (A). In the thermally conductive sheet, when a pore diameter distribution is measured through mercury intrusion technique for the inorganic filler material (B) that is included in an incineration residue after a cured product of the thermally conductive sheet is heated at 700° C. for four hours and is incinerated, a pore diameter distribution curve, that is measured through the mercury intrusion technique and is plotted with a pore diameter R as a horizontal axis and a logarithmic derivative of a pore volume (dV/d log R) as a vertical axis, has a peak (P) in the range where the pore diameter R is greater than or equal to 1.0 ?m and is less than or equal to 10.0 ?m, and the peak (P) is configured of two or more overlapping peaks.

Abstract: A thermally conductive sheet includes a thermosetting resin and an inorganic filler material. When a pore diameter distribution is measured through mercury intrusion technique for the inorganic filler material, a pore diameter distribution curve of the inorganic filler material has a first maximum value in the range where the pore diameter R is greater than or equal to 0.1 ?m and less than or equal to 5.0 ?m, and a second maximum value in the range where the pore diameter R is greater than or equal to 10 ?m and less than or equal to 30 ?m, and the difference between a second pore diameter at the second maximum value and a first pore diameter at the first maximum value is greater than or equal to 9.9 ?m and less than or equal to 25 ?m.

Abstract: A thermally conductive sheet includes a thermosetting resin and an inorganic filler material dispersed in the thermosetting resin. Measuring a pore diameter distribution through mercury intrusion technique for the inorganic filler material included in an incineration residue after a cured product of the thermally conductive sheet is heated and incinerated at 700° C. for four hours, a porosity of the inorganic filler material represented as 100×b/a is greater than or equal to 40% and less than or equal to 65% given that a is the volume of particles of the inorganic filler material included in the incineration residue, and b is the volume of voids in the particles of the inorganic filler material included in the incineration residue. An average pore diameter of the inorganic filler material included in the incineration residue is greater than or equal to 0.20 ?m and less than or equal to 1.35 ?m.

Abstract: In an electronic device, a silicone adhesive bonding first and second members is made from a composition comprising: (A) 100 parts by mass of an organopolysiloxane containing in one molecule at least two alkenyl groups and being free of silicon-bonded hydroxyl and alkoxy groups wherein the content of cyclic siloxanes having 4 to 20 siloxane units is at most 0.1 mass %; (B) an organopolysiloxane containing in one molecule at least two silicon-bonded hydrogen atoms and being free of an alkenyl group, and silicon-bonded hydroxyl and alkoxy groups; (C) at least 0.05 parts by mass of an adhesion promoter; (D) 100 to 2000 parts by mass of a thermally conductive filler; and (E) a hydrosilylation-reaction catalyst. (B) is contained such that the silicon-bonded hydrogen atoms is in the range of 0.5 to 10 mol per 1 mol of the alkenyl groups of (A), and the sum of (B) and (C) is 0.5 to 10 mass % of the sum of (A), (B) and (C).

Abstract: A tuning fork type piezoelectric resonator element includes: a base including a pair of cuts provided opposite from each other and a constricted part located between the pair of cuts, a pair of resonator arms extending from the base, and an excitation electrode provided to each of the pair of resonator arms. When the pair of resonator arms vibrate at an inherent resonance frequency fcom of a common mode at which the pair of resonator arms swing in a same direction, a node of the vibration of the common mode is located at the constricted part.

Abstract: A piezoelectric device comprises: a piezoelectric resonator element having a base, a plurality of oscillating arms paralleled each other and extended from the base, a plurality of supporting arms extended from the base and in parallel with the side surface of each of the plurality of oscillating arms so as to sandwich the plurality of oscillating arms, a groove formed in at least one of a front surface and a back surface of each of the plurality of oscillating arms and an end weight layer formed in at least one of the front surface and the back surface near to an end portion of each of the plurality of oscillating arms; a package storing the piezoelectric resonator element within a containable recess and being air-tightly sealed by a lid; a bottom surface recess rimmed in the bottom surface of the containable recess; and a connecting pad formed as a protrusion in an region that is connected with the plurality of supporting arms in the bottom surface of the containable recess.

Abstract: A tuning fork type piezoelectric resonator element includes: a base including a pair of cuts provided opposite from each other and a constricted part located between the pair of cuts, a pair of resonator arms extending from the base, and an excitation electrode provided to each of the pair of resonator arms. When the pair of resonator arms vibrate at an inherent resonance frequency fcom of a common mode at which the pair of resonator arms swing in a same direction, a node of the vibration of the common mode is located at the constricted part.

Abstract: A piezoelectric device comprises: a piezoelectric resonator element having a base, a plurality of oscillating arms paralleled each other and extended from the base, a plurality of supporting arms extended from the base and in parallel with the side surface of each of the plurality of oscillating arms so as to sandwich the plurality of oscillating arms, a groove formed in at least one of a front surface and a back surface of each of the plurality of oscillating arms and an end weight layer formed in at least one of the front surface and the back surface near to an end portion of each of the plurality of oscillating arms; a package storing the piezoelectric resonator element within a containable recess and being air-tightly sealed by a lid; a bottom surface recess rimmed in the bottom surface of the containable recess; and a connecting pad formed as a protrusion in an region that is connected with the plurality of supporting arms in the bottom surface of the containable recess.

Abstract: Aspects of the invention can provide a tuning-fork type piezo-oscillator piece, whose package, in which the tuning-fork type piezo-oscillator piece is mounted, is protected from colliding with oscillating arms even though a physical shock is given onto the tuning-fork type piezo-oscillator piece, and a mounting method thereof. The tuning-fork type piezo-oscillator piece can include a tuning-fork type piezo-oscillator piece main body equipped with a plurality of oscillating arms, a short side part formed along a direction perpendicular to the longitudinal direction of the tuning-fork type piezo-oscillator piece main body and connected to the tuning-fork type piezo-oscillator piece main body, and a long side part formed along the longitudinal direction of the tuning-fork type piezo-oscillator piece main body, while starting from the short side part, and equipped with a shock-absorbing part.