Abstract: The present invention is a method and circuit for providing a burst address counter with a fast burst-done signal. In a preferred embodiment, a synchronous memory device includes a counter for producing a sequence of burst addresses, based on an external address. In addition, the counter drives the burst-done signal to indicate completion of the burst sequence. The counter includes a register for receiving the external address, an incrementor for advancing the external address to produce the next address of the sequence of burst addresses, a minus-two subtractor for determining a second-to-last burst address of the burst sequence, and a comparator. By utilizing the minus-two subtractor, the comparator can determine the end of the burst sequence earlier than conventional counters. This is because the minus-two subtractor determines the next-to-last address of the sequence, which allows the comparator to start asserting the burst-done signal at an earlier time.

Abstract: A billing data is relieved by a relief method of billing data when a failure occurs on SVC (Switched Virtual Connection) calls which subscribers connect and disconnect. The relief method of billing data on an asynchronous transfer mode switching system includes an asynchronous transfer mode switch, a terminator provided on an input side of said asynchronous transfer mode switch for counting the number of cells sent from subscribers or other switching system, and a call controller for controlling paths on said asynchronous transfer mode switch, collecting a count value of the numbers of cells on said terminator, and creating billing data according to the count value of the collected cell number and call control data, wherein only the count value of the number of the cells counted on said terminator is removed from the values to be initialized on initialization caused by a failure.

Abstract: The present invention is directed to a vibration insulating assembly including a rubber vibration insulator and metallic members bonded thereto. In particular, the present invention relates to a method for manufacturing the same, by which the quality of the resulting assembly is improved by providing a high bonding strength between the vibration insulator and metallic members. Retainers are provided about the peripheries of the bonding surfaces of the rubber vibration insulator in order to restrict displacement and deformation of the rubber vibration insulator across the bonding surfaces or at the bonding interface with the metallic members and to facilitate its positioning. The presence of the retainers allows for the application of a predetermined pressure on the bonding surfaces to enhance the bonding strength while preventing an undesirable strain from forming in the bonding surface of the rubber vibration insulator.

Abstract: A memory circuit includes a bond option circuit 106 having an input and an output, and row control circuitry 100 coupled to the output of the bond option circuit, the row control circuitry including address terminals, A12 and A13. The memory circuit also includes column control circuitry 102 coupled to the output of the bond option circuit, the column control circuitry 102 also including address terminals, A12 and A13. A memory cell array is coupled to the row control and column control circuitry and is arranged in a first plurality of banks of memory cells, the banks being selectable by a combination of address signals on the address terminals of the row control and column control circuitry. In response to a first signal at the input of the bond option circuit 106, the bond option circuit produces a second signal at the output of the bond option circuit that is coupled to the row control 100 and column control 102 circuitry.

Abstract: A pair of DRAM chips 1A and 1B are mounted opposedly to each other with wiring means such as lead frames put therebetween, the lead frames being substantially integral with external terminals 3B. Then, these DRAM chips and lead frames are connected together by the conventional wire bonding method. Plural pairs of the thus-connected DRAM chips and lead frames are stacked and corresponding leads of the lead frames are connected in common to form a laminate. The plural DRAM chips thus mounted are activated selectively in accordance with a predetermined chip selection signal. Additionally, partial DRAM chips capable of partially functioning normally are combined together by utilizing the above chip mounting method to constitute a single DRAM package.

Abstract: When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.

Abstract: An arrangement is provided for preventing DC defects in a memory or logic device after switching to a redundant circuit, improving the product yield of the device by cutting a leakage current path through a defective element or circuit. The cutting points formed by the predetermined wirings as a whole or a part thereof are provided to the device. A probe test of the formed chip is executed under the wafer condition by predetermined test equipment, and wiring correction data regarding the cutting of the cutting points is generated based on the result of test. Moreover, this wiring correction data is transmitted in an on-line fashion to the wiring correction equipment so that the corresponding cutting points can be cut. The wiring correction equipment can be formed by an EB direct writing apparatus, an FIB apparatus or a laser repair apparatus.

Abstract: When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.

Abstract: A dynamic RAM provided with a data retention mode intended for low power consumption is provided. In the data retention mode, the current supply capabilities of voltage generation circuits which generate decreased voltage, increased voltage, reference voltage, etc., are limited in the range in which information retention operation in memory cells can be maintained, and the number of selected memory mats in the data retention mode is increased with respect to that of memory mats selected in the normal read/write mode and refresh mode. Special modes such as the data retention mode are set by combining an address strobe signal and other control signals and dummy CBR refresh is executed to release the special mode.

Abstract: A semiconductor memory device is provided which includes a plurality of data lines, at least one redundant data line, one common data line, a plurality of column switches installed between the plurality of data lines and the redundant data line and one common data line, and a column decoder for controlling the plurality of column switches. The column decoder operates to turn the column switch on. The column switch is connected to a plurality of data lines, excluding any defective data and redundant data lines during the test mode state.

Abstract: A pair of DRAM chips 1A and 1B are mounted opposedly to each other with wiring means such as lead frames put therebetween, the lead frames being substantially integral with external terminals 3B. Then, these DRAM chips and lead frames are connected together by the conventional wire bonding method. Each chip is bonded with an associated lead frame and each lead frame is disposed as plural lead frame conductors contacting mutually lead frame conductors associated with similarly function bonding pads, i.e. external terminals of the chips, of the other one of the pair of chips. Ones or plural pairs of the thus-connected DRAM chips and lead frames are stacked and corresponding leads of the lead frames are connected in common to form a laminate. The plural DRAM chips thus mounted are activated selectively in accordance with a predetermined chip selection signal.

Abstract: A process for the mass propagation of a woody plant comprising the steps of removing a shoot tip from the woody plant, transplanting the shoot tip to an artificial medium containing inorganic salts and plant growth hormones as main ingredients, and rotary-culturing the shoot tip under illumination to form shoot primordia, and stationary-culturing the shoot primordia in a liquid medium to regenerate shoots. Further, a process for the regeneration of plants comprising the steps of preparing a shoot primordium by rotary-culturing a shoot tip of a plant, treating the shoot primordium with at least one enzyme to prepare a protoplast, culturing the protoplast in an artificial medium containing plant hormones and inorganic and organic salts as main ingredients to form a callus, and incubating the callus in a regeneration medium to regenerate a shoot; plus intermediate materials of the process, and processes for production of the intermediate materials.

Abstract: To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.

Abstract: An arrangement is provided for preventing DC defects in a memory or logic device after switching to a redundant circuit, improving the product yield of the device by cutting a leakage current path through a defective element or circuit. The cutting points formed by the predetermined wirings as a whole or a part thereof are provided to the device. A probe test of the formed chip is executed under the wafer condition by predetermined test equipment, and wiring correction data regarding the cutting of the cutting points is generated based on the result of test. Moreover, this wiring correction data is transmitted in an on-line fashion to the wiring correction equipment so that the corresponding cutting points can be cut. The wiring correction equipment can be formed by an EB direct writing apparatus, an FIB apparatus or a laser repair apparatus.

Abstract: To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.

Abstract: A damping liquid for a hydraulic vibration-damping mount is composed of glycol, water and 2 to 20 weight % of age resistor having ozone resistance. The damping liquid gradually diffuses and infiltrates into a rubber member defining a liquid chamber of the hydraulic vibration-damping mount thereby remarkably improving the ozone resistance thereof.

Abstract: A semiconductor storage device is disclosed which has a plurality of common data lines for delivering information from plural memory cells selected out of a plurality of memory cells during a normal operation mode, a plurality of amplifier circuits provided corresponding to the plurality of common data lines, a plurality of first testing logical circuits each one of which is provided for plural amplifier circuits which are disposed in close vicinity to each other of the plurality of amplifier circuits, and a second testing logical circuit for receiving each of output signals from the plurality of first testing logical circuits during the testing mode.

Abstract: A pair of DRAM chips 1A and 1B are mounted opposedly to each other with wiring means such as lead frames put therebetween, the lead frames being substantially integral with external terminals 3B. Then, these DRAM chips and lead frames are connected together by the conventional wire bonding method. Plural pairs of the thus-connected DRAM chips and lead frames are stacked and corresponding leads of the lead frames are connected in common to form a laminate. The plural DRAM chips thus mounted are activated selectively in accordance with a predetermined chip selection signal. Additionally, partial DRAM chips capable of partially functioning normally are combined together by utilizing the above chip mounting method to constitute a single DRAM package.