Abstract: One problem with a sealed type nickel-metal hydride battery is that the high-rate discharge capability is inferior to that of a nickel-cadmium storage battery, because of a slow transfer rate of charges to the surface of a hydrogen storing alloy that is a negative electrode. Another problem is that the use of an alloy having excellent life characteristics takes much time for initial activation of battery characteristics. The invention provides a solution to the aforesaid problems by the provision of a sealed type nickel-metal hydride battery (1) improved in high-rate discharge capability and charge-discharge cycle characteristics. To this end, the invention is characterized by locating a 50 nm to 400 nm thick nickel-rich layer (11) on the surface of a hydrogen storing alloy powder, and locating the nickel-rich layer (11) as well on the surface of cracks (12) that open at the surface of alloy, and more preferably setting the mass saturation magnetization of the alloy powder at 2.

Abstract: A positive active material for lithium secondary batteries is provided with which a lithium secondary battery having a high energy density and excellent charge/discharge cycle performance can be obtained. Also provided is a lithium secondary battery having a high energy density and excellent charge/discharge cycle performance.

Abstract: A film-type lithium secondary battery, in which an electrolyte layer (13) composed only of an electrolyte integrated with an electrolyte in a cathode composite (11) is formed on a surface of the cathode composite (11) of a positive electrode (1), an electrolyte layer (23) composed only of an electrolyte integrated with an electrolyte in an anode composite (21) is formed on a surface of the anode composite (21) of a negative electrode (2), and the positive electrode (1) is opposed against the negative electrode (2) through the electrolyte layers (13 & 23).

Abstract: A thin film transistor array includes a gate bus and a source bus intersecting with each other at right angles, a thin film transistor pair disposed adjacent to the intersecting point and electrically connected to the two buses. If a short circuit is detected between the two buses, the gate bus or the source bus is severed into a separate portions to eliminate the short circuit. A bypass bus is provided to electrically connect the electrically good severed portions and to the end terminal. Such a bypass bus avoids the need for additional power supply terminals to the opposite ends of the severed bus and facilitates driving the thin film transistor by supplying the power at only one end thereof.

Abstract: In a thin-film transistor array, a plurality of gate buses and a plurality of source buses are formed on a substrate in such a manner that said gate buses are intersected with said source buses at crossover portions, and a plurality of thin-film transistors are formed on the substrate adjacent to the crossover portion, which are connected to the gate buses and source buses for a driving purpose.Furthermore, an auxiliary bus is formed on either the gate buses, or source buses, shortcircuited portions of which are cut out by means of laser trimming so as to conduct the gate buses or source buses.

Abstract: In an optical sensor, there is a risk that a short-circuit occurs in a gap between opposite electrodes on a photoconductive body. A pair of band-shaped electrodes each having a width of "W" are formed on the photoconductive body under the condition that these electrodes are positioned opposite to each other via the gap having an interval of "L". A band-shaped first notch portion having a length of "W/2" and a width of "L" is formed which is opened to the gap. Furthermore, a second notch portion is formed which is closed other than the portion thereof communicated to the first notch portion. Thus, first and second bridge portions are formed in one electrode where the first and second notch portions have been formed. When the opposite electrodes are shortcircuited, one of these bridge portions is cut out so that the tip portion of the cut electrode functions as another electrode.

Abstract: Disclosed is a liquid crystal element using a film transistor as a switching element, the liquid crystal element comprising two substrates opposed to each other, film transistors and spacers disposed on the opposed surface of one of the substrates, a transparent electrode formed on the opposed surface of the other substrate, a metal wiring formed simultaneously with a light shield of a film transistor or an upper metal layer of the spacer, the metal wiring having one end disposed between the film transistor or spacer and the transparent electrode whereas the other end thereof extends to the peripheral edge of the one substrate.