Patents by Inventor Kazuyuki Hagiwara
Kazuyuki Hagiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10431422Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.Type: GrantFiled: December 13, 2017Date of Patent: October 1, 2019Assignee: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack
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Publication number: 20180108513Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.Type: ApplicationFiled: December 13, 2017Publication date: April 19, 2018Applicant: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack
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Patent number: 9859100Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.Type: GrantFiled: May 17, 2016Date of Patent: January 2, 2018Assignee: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack
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Patent number: 9612530Abstract: A method and system for fracturing or mask data preparation are presented in which a set of shots is determined for a multi-beam charged particle beam writer. The edge slope of a pattern formed by the set of shots is calculated. An edge of the pattern which has an edge slope below a target level is identified, and the dosage of a beamlet in a shot in the set of shots is increased to improve the edge slope. The improved edge slope remains less than the target level.Type: GrantFiled: March 11, 2016Date of Patent: April 4, 2017Assignee: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Stephen F. Meier, Ingo Bork
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Publication number: 20160260581Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.Type: ApplicationFiled: May 17, 2016Publication date: September 8, 2016Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack
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Publication number: 20160195805Abstract: A method and system for fracturing or mask data preparation are presented in which a set of shots is determined for a multi-beam charged particle beam writer. The edge slope of a pattern formed by the set of shots is calculated. An edge of the pattern which has an edge slope below a target level is identified, and the dosage of a beamlet in a shot in the set of shots is increased to improve the edge slope. The improved edge slope remains less than the target level.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Inventors: Akira Fujimura, Kazuyuki Hagiwara, Stephen F. Meier, Ingo Bork
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Patent number: 9343267Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.Type: GrantFiled: July 14, 2014Date of Patent: May 17, 2016Assignee: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack
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Publication number: 20150338737Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.Type: ApplicationFiled: June 15, 2015Publication date: November 26, 2015Inventors: Akira Fujimura, Kazuyuki Hagiwara, Stephen F. Meier, Ingo Bork
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Patent number: 9057956Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.Type: GrantFiled: February 28, 2011Date of Patent: June 16, 2015Assignee: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Stephen F. Meier, Ingo Bork
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Patent number: 9047693Abstract: Provided is a system to assist in designing of color distribution on an object surface while considering the relationship between characteristics of a particle group contained in the paint and the design effect or texture at the object surface achieved by the particle group. The system is configured to calculate and display color distribution in accordance with variation angle at the object surface so as to reflect the texture or design effect at the object surface achieved by the particle group based on the designated distribution mode of the particle group included in the coating layer at the object surface as well as designated shape characteristics and optical characteristics of the particles making up the particle group and based on color distribution in accordance with variation angle at the object surface stored.Type: GrantFiled: July 10, 2012Date of Patent: June 2, 2015Assignee: HONDA MOTOR CO., LTD.Inventors: Takashi Adachi, Kazuyuki Hagiwara, Osamu Watabe, Yuri Kakihara, Masayuki Osumi
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Patent number: 9043734Abstract: A method and system for optical proximity correction (OPC) is disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on a reticle, where some of the shots overlap, where the pattern on the reticle is an OPC-corrected version of an input pattern, and where the sensitivity of the pattern on the reticle to manufacturing variation is reduced. A method for fracturing or mask data preparation is also disclosed.Type: GrantFiled: December 13, 2013Date of Patent: May 26, 2015Assignee: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Stephen F. Meier, Ingo Bork
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Patent number: 8959463Abstract: A method for mask process correction or forming a pattern on a resist-coated reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle, and where the pattern exposure information is modified to lower the calculated sensitivity. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a resist-coated reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle.Type: GrantFiled: March 13, 2013Date of Patent: February 17, 2015Assignee: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack, Anatoly Aadamov
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Patent number: 8949750Abstract: A method and system for fracturing or mask data preparation is disclosed in which the central core portion of a diagonal pattern is fractured using overlapping variable shaped beam (VSB) shots, and an outer portion of the diagonal pattern is fractured using non-overlapping VSB shots. A transition region is interposed between the central core and outer pattern portions, and transition region shots are generated so as to produce in the transferred pattern a smooth transition in pattern characteristics such as line edge roughness or period of waviness, from the central core portion of the pattern to the outer portion of the pattern. A pattern determined by the transition region shots is then compared to a reticle pattern created using conventional non-overlapping VSB shots. Methods for forming a semiconductor device layout pattern on a reticle or substrate are also disclosed.Type: GrantFiled: March 13, 2013Date of Patent: February 3, 2015Assignee: D2S, Inc.Inventors: Etienne Jacques, Jin Choi, Kazuyuki Hagiwara
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Publication number: 20140359542Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.Type: ApplicationFiled: July 14, 2014Publication date: December 4, 2014Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack
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Patent number: 8865377Abstract: A method and system for fracturing or mask data preparation is disclosed in which the central core portion of a diagonal pattern is fractured using overlapping variable shaped beam (VSB) shots, and an outer portion of the diagonal pattern is fractured using non-overlapping VSB shots. A transition region is interposed between the central core and outer pattern portions, and transition region shots are generated so as to produce in the transferred pattern a smooth transition in pattern characteristics such as line edge roughness or period of waviness, from the central core portion of the pattern to the outer portion of the pattern. Methods for forming a semiconductor device layout pattern on a reticle or substrate are also disclosed.Type: GrantFiled: March 13, 2013Date of Patent: October 21, 2014Assignee: D2S, Inc.Inventors: Etienne Jacques, Jin Choi, Kazuyuki Hagiwara
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Publication number: 20140282304Abstract: A method and system for fracturing or mask data preparation is disclosed in which the central core portion of a diagonal pattern is fractured using overlapping variable shaped beam (VSB) shots, and an outer portion of the diagonal pattern is fractured using non-overlapping VSB shots. A transition region is interposed between the central core and outer pattern portions, and transition region shots are generated so as to produce in the transferred pattern a smooth transition in pattern characteristics such as line edge roughness or period of waviness, from the central core portion of the pattern to the outer portion of the pattern. A pattern determined by the transition region shots is then compared to a reticle pattern created using conventional non-overlapping VSB shots. Methods for forming a semiconductor device layout pattern on a reticle or substrate are also disclosed.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Applicant: D2S, INC.Inventors: Etienne Jacques, Jin Choi, Kazuyuki Hagiwara
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Publication number: 20140272675Abstract: A method and system for fracturing or mask data preparation is disclosed in which the central core portion of a diagonal pattern is fractured using overlapping variable shaped beam (VSB) shots, and an outer portion of the diagonal pattern is fractured using non-overlapping VSB shots. A transition region is interposed between the central core and outer pattern portions, and transition region shots are generated so as to produce in the transferred pattern a smooth transition in pattern characteristics such as line edge roughness or period of waviness, from the central core portion of the pattern to the outer portion of the pattern. Methods for forming a semiconductor device layout pattern on a reticle or substrate are also disclosed.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Applicant: D2S, INC.Inventors: Etienne Jacques, Jin Choi, Kazuyuki Hagiwara
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Publication number: 20140223393Abstract: A method and system for optical proximity correction (OPC) is disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on a reticle, where some of the shots overlap, where the pattern on the reticle is an OPC-corrected version of an input pattern, and where the sensitivity of the pattern on the reticle to manufacturing variation is reduced. A method for fracturing or mask data preparation is also disclosed.Type: ApplicationFiled: December 13, 2013Publication date: August 7, 2014Applicant: D2S, Inc.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Stephen F. Meier, Ingo Bork
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Publication number: 20140168251Abstract: Provided is a system to assist in designing of color distribution on an object surface while considering the relationship between characteristics of a particle group contained in the paint and the design effect or texture at the object surface achieved by the particle group. The system is configured to calculate and display color distribution in accordance with variation angle at the object surface so as to reflect the texture or design effect at the object surface achieved by the particle group based on the designated distribution mode of the particle group included in the coating layer at the object surface as well as designated shape characteristics and optical characteristics of the particles making up the particle group and based on color distribution in accordance with variation angle at the object surface stored.Type: ApplicationFiled: July 10, 2012Publication date: June 19, 2014Applicant: HONDA MOTOR CO., LTD.Inventors: Takashi Adachi, Kazuyuki Hagiwara, Osamu Watabe, Yuri Kakihara, Masayuki Osumi
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Publication number: 20140129997Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.Type: ApplicationFiled: March 13, 2013Publication date: May 8, 2014Applicant: D2S, INC.Inventors: Akira Fujimura, Kazuyuki Hagiwara, Robert C. Pack