Patents by Inventor Kazuyuki Kurita

Kazuyuki Kurita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080111891
    Abstract: When a shot reproduction command of a preset function is given from a platform controller 12 and a zoom position of a shot to be reproduced is closer to the wide side than a current position, CPU 42 of a platform main body 16 performs driving of the zoom prior to driving of the pan/tilt. On the contrary, when the zoom position of the shot to be reproduced is closer to the telephoto side than the current position, CPU 42 performs the driving of the pan/tilt prior to the driving of the zoom.
    Type: Application
    Filed: November 9, 2007
    Publication date: May 15, 2008
    Inventors: Kazuyuki KURITA, Nobuaki Okita
  • Patent number: 7161624
    Abstract: In a remote control pan head system, communication data is outputted from an operation unit and is inputted to a system controller via a modem, a general communication line and another modem. The system controller recognizes a data format of the inputted communication data. If the data format differs from the data format for the communication of a pan head, the data format of the communication data is converted into the data format that conforms with the data format for the pan head, and the converted communication data is transmitted to the pan head. Thus, the remote control pan head can be controlled even if data formats of communication data differ between the operation unit and the remote control pan head.
    Type: Grant
    Filed: April 14, 2000
    Date of Patent: January 9, 2007
    Assignee: Fujinon Corporation
    Inventor: Kazuyuki Kurita
  • Patent number: 6049968
    Abstract: A floating type of magnetic head having a high mechanical strength and a superior productivity and a method for producing the same are provided. A slider is composed of a first slider body and a second slider body. A main cut groove and a second sub-cut grooves are formed on a bonded surface side of the first slider body so that a first pillar portion and a second pillar portion around which lead lines are to be wound together with a first core body and a second core body a magnetic head core are left. Since the first and second pillar portions are bonded to the second slider body and during the assembling and machining operations, the first and second pillar portions receive a force that is applied to the slider or the magnetic head core to be effective for the reinforcement of the mechanical strength, the slider or the magnetic head may hardly be damaged or broken down.
    Type: Grant
    Filed: January 30, 1998
    Date of Patent: April 18, 2000
    Assignee: Minebea Co., Ltd.
    Inventors: Kazuyuki Kurita, Shigeyuki Adachi
  • Patent number: 5820980
    Abstract: A thin film made of hydrogenated amorphous silicon oxide ?a-SiO.sub.x :H! (x=1.0 to 1.8) is formed on an upper surface of a slider and an upper surface of a head core of a magnetic head, in which the thickness of the thin film is set at 1 nm to 20 nm.
    Type: Grant
    Filed: February 7, 1997
    Date of Patent: October 13, 1998
    Assignee: Minebea Co., Ltd.
    Inventors: Toshiaki Asakawa, Shinya Ibaraki, Kazuyuki Kurita
  • Patent number: 5771134
    Abstract: A floating type of magnetic head having a high mechanical strength and a superior productivity and a method for producing the same are provided. A slider is composed of a first slider body and a second slider body. A main cut groove and a second sub-cut grooves are formed on a bonded surface side of the first slider body so that a first pillar portion and a second pillar portion around which lead lines are to be wound together with a first core body and a second core body a magnetic head core are left. Since the first and second pillar portions are bonded to the second slider body and during the assembling and machining operations, the first and second pillar portions receive a force that is applied to the slider or the magnetic head core to be effective for the reinforcement of the mechanical strength, the slider or the magnetic head may hardly be damaged or broken down.
    Type: Grant
    Filed: March 26, 1997
    Date of Patent: June 23, 1998
    Assignee: Minebea Co., Ltd.
    Inventors: Kazuyuki Kurita, Shigeyuki Adachi
  • Patent number: 5657185
    Abstract: On one end of a first slider member 2A, a first hole 10 and a second hole 11 for coils 30, 31 are provided. The first slider member 2A further includes first and second poles 12,13 to wind the coils 30, 31 together with the magnetic head core 6. A second slider member 2B is provided having a groove 14 for accommodating the coils 30, 31. Thereby, the poles 12,13 contribute to bridge the groove 14 and reinforce the side portion of the second slider member 2B which is weakened by the groove 14.This increases the strength of the apparatus.
    Type: Grant
    Filed: March 25, 1996
    Date of Patent: August 12, 1997
    Assignee: Minebea Co., Ltd
    Inventors: Shigeyuki Adachi, Toshihiro Horiuchi, Kazuyuki Kurita
  • Patent number: 5160998
    Abstract: A semiconductor device including a semiconductor substrate; a metal wiring layer formed on the semiconductor substrate; a first insulation layer formed on the metal wiring layer, the first insulation layer being formed by a tensile stress insulation layer having a contracting characteristic relative to the substrate; and a second insulation layer formed on the first insulation layer, the second insulation layer being formed by a compressive stress insulation layer having an expanding characteristic relative to the substrate. The tensile stress insulation layer is produced by thermal chemical vapor deposition or plasma assisted chemical vapor deposition which is performed in a discharge frequency range higher than 2 megahertz; and the compressive stress insulation layer is produced by plasma assisted chemical vapor deposition which is performed in a discharge frequency range lower than 2 megahertz.
    Type: Grant
    Filed: October 21, 1991
    Date of Patent: November 3, 1992
    Assignee: Fujitsu Limited
    Inventors: Junichi Itoh, Kazuyuki Kurita
  • Patent number: 4966861
    Abstract: A method for simultaneously forming an epitaxial silicon layer on a surface of a silicon substrate, and a polysilicon layer on a silicon dioxide (SiO.sub.2) layer which is formed on the silicon substrate using a low pressure silicon vapor deposition method, employing silicon hydride gas, particularly disilane (Si.sub.2 O.sub.6), as a silicon source gas. A crystal growing temperature ranging from 780.degree. C. to 950.degree. C. and a reaction gas pressure ranging from 20 Torr to 300 Torr are desirable. An extended silicon epitaxial region is achieved under a higher temperature and a higher gas pressure, and with a substrate of a (100) orientation. A polysilicon layer having an even surface and joining smoothly to an epitaxial silicon layer which is simultaneously formed, is obtained under a lower temperature and a lower gas pressure, and with a substrate of a (111) orientation.
    Type: Grant
    Filed: April 25, 1989
    Date of Patent: October 30, 1990
    Assignee: Fujitsu Limited
    Inventors: Fumitake Mieno, Kazuyuki Kurita, Shinji Nakamura, Atuo Shimizu