Abstract: Provided is a semiconductor device capable of suppressing an Al slide at a time of an operation under a high temperature in a laminated structure of an aluminum electrode layer and a copper electrode layer. Accordingly, in the semiconductor device according to the present disclosure, a first copper electrode layer includes a plurality of protruding regions as regions protruding toward the aluminum electrode layer in an interface with the aluminum electrode layer.

Abstract: A printing device includes a coating material scooping unit configured to scoop a coating material on a mask, and a controller configured or programmed to determine whether or not the coating material scooping unit performs collecting operation to collect the coating material on the mask when the mask is replaced.

Abstract: A semiconductor device that includes a semiconductor layer disposed on a semiconductor substrate, a first semiconductor region provided in an upper layer portion of the semiconductor layer, a second semiconductor region provided in an upper layer portion of the first semiconductor region, a gate insulation film, a gate electrode, a first main electrode that is provided on an interlayer insulation film that covers the gate electrode and that is electrically connected to the second semiconductor region via a contact hole, and a second main electrode disposed on a second main surface of the semiconductor substrate. The first main electrode includes an underlying electrode film connected to the second semiconductor region via the contact hole, and a copper film provided on the underlying electrode film. The copper film includes at least a portion that serves as a stress relaxation layer having a smaller grain size than the other portion of the copper film.

Abstract: A printing device includes a controller configured or programmed to acquire, based on a width of a coating material that has been measured, at least one of a start position, an end position, or an amount of movement of a coating material scooping unit in coating material scooping operation.

Abstract: A printing device includes a controller configured or programmed to acquire, based on a width of a coating material that has been measured, at least one of a start position, an end position, or an amount of movement of a coating material scooping unit in coating material scooping operation.

Abstract: In a termination region of a SiC-MOSFET, suppressing operation of a p-n diode between a well and a drift layer sometimes decreases reliability during high-speed switching. In a termination region of a SiC-MOSFET with a built-in SBD are provided second well region having an impurity concentration lower than the impurity concentration in a well region in an active region, and a high-concentration region that is formed on a surface layer of the second well region, has an impurity concentration higher than the impurity concentration in the well region in the active region, and is ohmic-connected to a source electrode.

Abstract: A printing device includes a coating material scooping unit configured to scoop a coating material on a mask, and a controller configured or programmed to determine whether or not the coating material scooping unit performs collecting operation to collect the coating material on the mask when the mask is replaced.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: In a termination region of a SiC-MOSFET, suppressing operation of a p-n diode between a well and a drift layer sometimes decreases reliability during high-speed switching. In a termination region of a SiC-MOSFET with a built-in SBD are provided second well region having an impurity concentration lower than the impurity concentration in a well region in an active region, and a high-concentration region that is formed on a surface layer of the outer periphery second well region, has an impurity concentration higher than the impurity concentration in the well region in the active region, and is ohmic-connected to a source electrode.

Abstract: A method for manufacturing a semiconductor device includes: a process of forming a Cu wiring electrode by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material; a reducing process of reducing the Cu wiring electrode under a NH3 atmosphere; a heating process of heating the Cu wiring electrode at the same time as the reducing process; a process of forming a diffusion prevention film covering the Cu wiring electrode after the heating process; and a sealing process of covering the diffusion prevention film with an organic resin film.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: A semiconductor device that includes a semiconductor layer disposed on a semiconductor substrate, a first semiconductor region provided in an upper layer portion of the semiconductor layer, a second semiconductor region provided in an upper layer portion of the first semiconductor region, a gate insulation film, a gate electrode, a first main electrode that is provided on an interlayer insulation film that covers the gate electrode and that is electrically connected to the second semiconductor region via a contact hole, and a second main electrode disposed on a second main surface of the semiconductor substrate. The first main electrode includes an underlying electrode film connected to the second semiconductor region via the contact hole, and a copper film provided on the underlying electrode film. The copper film includes at least a portion that serves as a stress relaxation layer having a smaller grain size than the other portion of the copper film.

Abstract: A method for manufacturing a semiconductor device includes: a process of forming a Cu wiring electrode by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material; a reducing process of reducing the Cu wiring electrode under a NH3 atmosphere; a heating process of heating the Cu wiring electrode at the same time as the reducing process; a process of forming a diffusion prevention film covering the Cu wiring electrode after the heating process; and a sealing process of covering the diffusion prevention film with an organic resin film.

Abstract: A method of manufacturing a silicon carbide semiconductor device is provided. The method suppresses the increase in the number of manufacturing steps and is capable of suppressing the degradation of ohmic characteristics of an alloy layer with respect to a semiconductor substrate. The method includes a step of forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide; a step of forming a metal nitride film obtained by nitriding a second metal on the metal layer; a step of directing a laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and a step of forming an electrode on the metal nitride film.

Abstract: A semiconductor device capable of inhibiting oxidation of a Cu wiring even in a high temperature operation. The semiconductor device includes a semiconductor substrate having a main surface, a Cu electrode which is selectively formed on a side of the main surface of the semiconductor substrate, an antioxidant film formed on an upper surface of the Cu electrode except an end portion thereof, an organic resin film which is formed on the main surface of the semiconductor substrate and covers a side surface of the Cu electrode and the end portion of the upper surface thereof, and a diffusion prevention film formed between the organic resin film and the main surface of the semiconductor substrate and between the organic resin film and the side surface and the end portion of the upper surface of the Cu electrode, being in contact therewith.

Abstract: A method of manufacturing a silicon carbide semiconductor device is provided. The method suppresses the increase in the number of manufacturing steps and is capable of suppressing the degradation of ohmic characteristics of an alloy layer with respect to a semiconductor substrate. The method includes a step of forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide; a step of forming a metal nitride film obtained by nitriding a second metal on the metal layer; a step of directing a laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and a step of forming an electrode on the metal nitride film.

Abstract: A semiconductor device capable of inhibiting oxidation of a Cu wiring even in a high temperature operation. The semiconductor device includes a semiconductor substrate having a main surface, a Cu electrode which is selectively formed on a side of the main surface of the semiconductor substrate, an antioxidant film formed on an upper surface of the Cu electrode except an end portion thereof, an organic resin film which is formed on the main surface of the semiconductor substrate and covers a side surface of the Cu electrode and the end portion of the upper surface thereof, and a diffusion prevention film formed between the organic resin film and the main surface of the semiconductor substrate and between the organic resin film and the side surface and the end portion of the upper surface of the Cu electrode, being in contact therewith.

Abstract: A board working system includes a board working apparatus working on a board and a board conveying apparatus including a first board conveying portion, connected to the board working apparatus. The board conveying apparatus is provided with a shutter device closing such that the maximum interval of an opening gap leading from the first board conveying portion to the board working apparatus is not more than a prescribed value when setup for the first board conveying portion is performed.

Abstract: A board working system includes a board working apparatus working on a board and a board conveying apparatus including a first board conveying portion, connected to the board working apparatus. The board conveying apparatus is provided with a shutter device closing such that the maximum interval of an opening gap leading from the first board conveying portion to the board working apparatus is not more than a prescribed value when setup for the first board conveying portion is performed.

Abstract: A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.