Abstract: An optical module that achieves an adjustable aperture with a multilayer liquid crystal diaphragm, and an electronic apparatus using the optical module are described. The optical module includes at least one diaphragm layer having a light-transmission area that is fully transmissive and a variable light-transmission area filled with material having variable transmittance; and an electrode unit for applying an adjustment voltage to the at least one diaphragm layer. Transmittance of the variable light-transmission area varies in accordance with the adjustment voltage applied by the electrode unit.

Abstract: An effective amount of a composition comprising (i) a plasmid having a cyclooxygenase-prostacyclin synthase fusion gene, and (ii) a carrier fluid for use in treating an individual having a vascular disease or at risk of developing a vascular disease. A composition comprising a carrier fluid; and a DNA sequence encoding for a triple catalytic enzyme, a cDNA sequence encoding for a triple catalytic enzyme, a plasmid comprising a DNA sequence encoding for a triple catalytic enzyme, a fusion gene encoding for a triple catalytic enzyme, a cyclooxygenase-prostacyclin synthase fusion gene, or combinations thereof, for use in treating an individual having a vascular disease or at risk of developing a vascular disease.

Abstract: An arrangement method of an image sensor array includes forming an M-row N-column non-standard rectangular pixel array with M×N image sensors, wherein the non-standard rectangular pixel array matches to optical distortion of an associated lens. The non-standard rectangular pixel array refers to that four edges of the non-standard rectangular are curves, and the M, N are an integer larger than or equal to 1. An image sensor array, an image acquisition component, and an electronic device are also described.

Abstract: A card connector (100) includes an insulative housing (1) and a number of contacts (2) retained in the insulative housing. The insulative housing defines a receiving space (10), a front-and-rear direction, and a left-and-right direction perpendicular to the front-and-rear direction. Each contact includes a soldering portion (23), two retaining portions (24), and a curved portion (25) connecting between the two retaining portions. The curved portion includes a contacting portion (251) arching upwardly to protrude into the receiving space and two flexible portions (252) integrally formed at two opposite ends of the contacting portion. The two flexible portions are centrosymmetry with respect to the contacting portion.

Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.

Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

Abstract: An apparatus comprising: a processor; and a memory including computer program code, the memory and the computer program code configured, with the processor, to cause the apparatus to perform at least the following: enable, in response to receiving a present user input associated with a position on a screen of an electronic device, a user to interact with a graphical user interface at a determined displaced effective input position on the screen, wherein the position of the displaced effective input is displaced from the associated present user input screen position and is determined by scaling the displacement vector from a reference position associated with a reference user input to the spaced apart position of the received present user input.

Abstract: A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.

Abstract: The present invention provides a heat-resistance plant gene JAZ5a and use thereof. The inventors of the present invention isolated for the first time a heat resistance gene from the plant of Brassica spp., which can greatly improve the heat-resistance ability of the plant, especially in the bolting stage. The present invention further provides a protein encoded by said gene and its preparation method, vectors and host cells containing said gene, and a method for preparing a transgenic plant containing said gene.

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm?2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Abstract: A recombinant 130-kDa protein is constructed by linking together human cyclooxygenase (COX) isoform-2 (COX-2) and prostacyclin synthase (PGIS), via a 10-20 amino acid residues of a transmembrane sequence. The engineered protein is expressed in cells, and adopts the functions of COX and PGIS, to continually convert arachidonic acid (AA) into prostaglandin G2 (catalytic step 1), prostaglandin H2 (catalytic step 2) and prostacyclin (PGI2; catalytic step 3).

Abstract: An optical module that achieves an adjustable aperture with a multilayer liquid crystal diaphragm, and an electronic apparatus using the optical module are described. The optical module includes at least one diaphragm layer having a light-transmission area that is fully transmissive and a variable light-transmission area filled with material having variable transmittance; and an electrode unit for applying an adjustment voltage to the at least one diaphragm layer. Transmittance of the variable light-transmission area varies in accordance with the adjustment voltage applied by the electrode unit.

Abstract: The present invention provides a heat-resistance plant gene JAZ5a and use thereof. The inventors of the present invention isolated for the first time a heat resistance gene from the plant of Brassica spp., which can greatly improve the heat-resistance ability of the plant, especially in the bolting stage. The present invention further provides a protein encoded by said gene and its preparation method, vectors and host cells containing said gene, and a method for preparing a transgenic plant containing said gene.

Abstract: A card connector (100) includes an insulative housing (1) and a number of contacts (2) retained in the insulative housing. The insulative housing defines a receiving space (10), a front-and-rear direction, and a left-and-right direction perpendicular to the front-and-rear direction. Each contact includes a soldering portion (23), two retaining portions (24), and a curved portion (25) connecting between the two retaining portions. The curved portion includes a contacting portion (251) arching upwardly to protrude into the receiving space and two flexible portions (252) integrally formed at two opposite ends of the contacting portion. The two flexible portions are centrosymmetry with respect to the contacting portion.

Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.

Abstract: An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0<x<1, 0<y<2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.

Abstract: A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0.05<x<0.3, 0<y<0.3, and 1:2<x:y<2:1. The magnetically doped TI quantum well film is in 3 QL to 5 QL.

Abstract: A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0<x<1, 0<y<2. Values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi. The magnetically doped TI quantum well film is in 3 QL to 5 QL.

Abstract: A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.