Abstract: A memory device includes a first plurality of program lines of a first group, a second plurality of program lines of a second group, and a plurality of address lines. The second plurality of program lines are disposed next to and are parallel to the first plurality of program lines. The plurality of address lines are coupled to the first plurality of program lines and the second plurality of program lines respectively. The plurality of address lines are twisted and are intersected with the first plurality of program lines and the second plurality of program lines in a layout view. At least two adjacent program lines of the first plurality of program lines or the second plurality of program lines have lengths different from each other. A method is also disclosed herein.

Abstract: A memory device includes a first plurality of program lines of a first group, a second plurality of program lines of a second group, and a plurality of address lines. The second plurality of program lines are disposed next to and are parallel to the first plurality of program lines. The plurality of address lines are coupled to the first plurality of program lines and the second plurality of program lines respectively. The plurality of address lines are twisted and are intersected with the first plurality of program lines and the second plurality of program lines in a layout view. At least two adjacent program lines of the first plurality of program lines or the second plurality of program lines have lengths different from each other. A method is also disclosed herein.