Patents by Inventor Kedarnath Sangam
Kedarnath Sangam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9920451Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: March 17, 2014Date of Patent: March 20, 2018Assignee: Crystal Solar IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
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Patent number: 9556522Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: March 4, 2014Date of Patent: January 31, 2017Assignee: Crystal Solar IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
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Patent number: 9423042Abstract: Methods and apparatus for increasing flow uniformity are provided herein. In some embodiments, a slit valve having increased flow uniformity may be provided, the slit valve may include a housing having an opening disposed therethrough, the opening configured to allow a substrate to pass therethrough; a gas inlet formed in the housing; an outer plenum disposed in the housing and coupled to the gas inlet; an inner plenum disposed in the housing and coupled to the outer plenum via a plurality of holes; and a plurality of gas outlets disposed in the housing and fluidly coupling the opening to the inner plenum.Type: GrantFiled: February 11, 2013Date of Patent: August 23, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Chandrasekhar Balasubramanyam, Helder Lee, Miriam Schwartz, Elizabeth Wu, Kedarnath Sangam
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Patent number: 8888916Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: GrantFiled: November 22, 2013Date of Patent: November 18, 2014Assignee: Applied Materials, Inc.Inventors: Ming-Kuei (Michael) Tseng, Norman L. Tam, Yoshitaka Yokota, Agus S. Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Publication number: 20140311403Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: ApplicationFiled: March 17, 2014Publication date: October 23, 2014Applicant: Crystal Solar, IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
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Publication number: 20140295106Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: ApplicationFiled: March 4, 2014Publication date: October 2, 2014Applicant: CRYSTAL SOLAR, INCORPORATEDInventors: Visweswaren Sivaramakrishnan, Kedarnath SANGAM, Tirunelveli S. RAVI, Andrzej KASZUBA, Quoc VINH
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Patent number: 8698049Abstract: Embodiments of a lamphead and apparatus utilizing same are provided. In some embodiments, a lamphead for thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage, wherein the at least one heat transfer member extends into each coolant passage up to the full height of each coolant passage. The lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.Type: GrantFiled: October 23, 2012Date of Patent: April 15, 2014Assignee: Applied Materials, Inc.Inventors: Joseph M. Ranish, Khurshed Sorabji, Kedarnath Sangam, Alexander Lerner
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Publication number: 20140079376Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: ApplicationFiled: November 22, 2013Publication date: March 20, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Ming-Kuei (Michael) TSENG, Norman L. TAM, Yoshitaka YOKOTA, Agus S. TJANDRA, Robert NAVASCA, Mehran BEHDJAT, Sundar RAMAMURTHY, Kedarnath SANGAM, Alexander N. LERNER
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Patent number: 8673081Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: February 25, 2010Date of Patent: March 18, 2014Assignee: Crystal Solar, Inc.Inventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
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Patent number: 8663753Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: October 30, 2012Date of Patent: March 4, 2014Assignee: Crystal Solar IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh
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Patent number: 8608853Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: GrantFiled: November 15, 2011Date of Patent: December 17, 2013Assignee: Applied Materials, Inc.Inventors: Ming-Kuei (Michael) Tseng, Norman Tam, Yoshitaka Yokota, Agus Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Patent number: 8490660Abstract: An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.Type: GrantFiled: November 11, 2011Date of Patent: July 23, 2013Assignee: Applied Materials, Inc.Inventors: Blake Koelmel, Alexander N. Lerner, Joseph M. Ranish, Kedarnath Sangam, Khurshed Sorabji
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Patent number: 8382897Abstract: Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.Type: GrantFiled: April 25, 2012Date of Patent: February 26, 2013Assignee: Applied Materials, Inc.Inventors: Kedarnath Sangam, Anh N. Nguyen
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Patent number: 8377213Abstract: Methods and apparatus for increasing flow uniformity are provided herein. In some embodiments, a slit valve having increased flow uniformity may be provided, the slit valve may include a housing having an opening disposed therethrough, the opening configured to allow a substrate to pass therethrough; a gas inlet formed in the housing; an outer plenum disposed in the housing and coupled to the gas inlet; an inner plenum disposed in the housing and coupled to the outer plenum via a plurality of holes; and a plurality of gas outlets disposed in the housing and fluidly coupling the opening to the inner plenum.Type: GrantFiled: May 5, 2008Date of Patent: February 19, 2013Assignee: Applied Materials, Inc.Inventors: Chandrasekhar Balasubramanyam, Helder Lee, Miriam Schwartz, Elizabeth Wu, Kedarnath Sangam
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Patent number: 8298629Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: February 25, 2009Date of Patent: October 30, 2012Assignee: Crystal Solar IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
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Patent number: 8294068Abstract: Embodiments of a lamphead and apparatus utilizing same are provided herein. In some embodiments, a lamphead for use in thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage. In some embodiments, the lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.Type: GrantFiled: September 10, 2008Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Joseph M. Ranish, Khurshed Sorabji, Kedarnath Sangam, Alexander Lerner
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Publication number: 20120208372Abstract: Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.Type: ApplicationFiled: April 25, 2012Publication date: August 16, 2012Applicant: APPLIED MATERIALS, INC.Inventors: KEDARNATH SANGAM, ANH N. NGUYEN
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Patent number: 8187381Abstract: Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas conduits; each gas conduit having an inlet and an outlet for facilitating the flow of a gas therethrough and into the first volume, wherein each gas conduit has a second volume less than the first volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet, wherein the second cross-section is non-circular. In some embodiments, each conduit has a longitudinal axis that intersects a central axis of the gas inlet funnel.Type: GrantFiled: August 22, 2008Date of Patent: May 29, 2012Assignee: Applied Materials, Inc.Inventors: Kedarnath Sangam, Anh N. Nguyen
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Publication number: 20120058648Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: ApplicationFiled: November 15, 2011Publication date: March 8, 2012Inventors: Ming-Kuei (Michael) Tseng, Norman Tam, Yoshitaka Yokota, Agus Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Publication number: 20120055405Abstract: An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.Type: ApplicationFiled: November 11, 2011Publication date: March 8, 2012Inventors: Blake Koelmel, Alexander N. Lerner, Joseph M. Ranish, Kedarnath Sangam, Khurshed Sorabji