Abstract: A composition injection device includes a needle which is provided such that the ends of a distal part and proximal part thereof are open, and which is hollow such that a composition is injected thereto or discharged therefrom; a pressing member inserted into the needle to discharge the composition from the needle by pressurizing the composition injected into the needle; and a paddle which is formed to extend from the end of the distal part of the needle, and which enables the composition discharged from the needle to be applied, wherein the maximum width of the paddle is at most the outer diameter of the needle.

Abstract: Disclosed is a composition for treating a wound including a dermis-derived extracellular matrix and a method for preparing the composition. By using the composition for treating a wound according to the present invention, the composition can be applied to wounds of various sizes and depths by increasing the viscosity of the composition, the composition is well coagulated without falling off for a certain period of time after application to a wound surface, and the composition can promote recovery.

Abstract: A composition includes a cartilage component for regeneration of cartilage and a manufacturing method therefor. A composition for regeneration of cartilage, in which a micronized cartilage powder is physically mixed with a biocompatible polymer or a chemically crosslinked biocompatible polymer. When applied, the composition can increase morphological retention and ease of use at cartilage injury sites.

Abstract: The present invention relates to a medical composition and a method for preparing the same, the medical composition comprising: an adipose tissue-derived extracellular matrix powder; and a biocompatible polymer or a crosslinked product of the biocompatible polymer. The medical composition according to the present invention exists in a well-aggregated state even after implantation in the body and can maintain the volume thereof for a certain time.

Abstract: The present invention relates to a decellularized nerve graft using allogeneic and heterologous nervous tissues and a method of manufacturing the same. In the present invention, by using a low-concentration basic solution and a surfactant as a decellularization solution, cell and tissue toxicity caused by a solvent or surfactant remaining in the tissue may be minimized by minimizing the use of a basic solution and an anionic surfactant in the entire manufacturing process. In addition, a peristaltic pump may be used to maintain the tissue structure and effectively remove lipid and cells.

Abstract: A method for producing a composite demineralized bone matrix composition using a one-step process is described. The composite demineralized bone matrix composition is produced from the biologically-derived bone. In addition, the composite demineralized bone matrix composition contains bone minerals according to the original composition proportion in the bone and may provide a bone mineral content condition that is closest to that in an environment in which in vivo bone formation occurs. In addition, the composition contains a bone morphogenetic protein (BMP-2), and thus enables a stable and excellent bone formation effect to be derived.

Abstract: A zinc-alpha-2-glycoprotein (ZAG) protein-derived peptide according to the present invention shows an expression reducing effect of various immune factors shown in acute or chronic atopic dermatitis, and has a decreased immune response and decreased IgE expression and thus may be used to prevent, treat or improve xeroderma or an abnormal skin barrier function such as atopic dermatitis, an allergic disease or inflammation.

Abstract: The present invention relates to a zinc-alpha-2-glycoprotein (ZAG) protein-derived peptide and a use thereof. The ZAG protein-derived peptide according to the present invention shows an expression reducing effect of various immune factors shown in acute or chronic atopic dermatitis, and has a decreased immune response and decreased IgE expression and thus may be used to prevent, treat or improve xeroderma or an abnormal skin barrier function such as atopic dermatitis, an allergic disease or inflammation.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: A method of manufacturing a semiconductor light-emitting device is provided. The method includes operations of forming a first conductive type semiconductor layer on a substrate; forming a V-pit in the first conductive type semiconductor layer; forming a defect decreasing structure in and over the V-pit; and forming a residual first conductive type semiconductor layer on the defect decreasing structure. By using the method, an excellent-quality semiconductor light-emitting device having a reduced crystal defect may be inexpensively manufactured.

Abstract: An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

Abstract: An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

Abstract: A vertical light-emitting device includes: a substrate; a first electrode disposed on a bottom surface of the substrate; a reflection layer disposed on a top surface of the substrate; a current spreading layer disposed on the reflection layer and comprising a groove having a width narrower toward a top portion thereof; a light generation layer disposed on the current spreading layer; and a second electrode disposed on the light generation layer.