Abstract: The invention discloses a method and apparatus for transferring nano-carbon material. The nano-carbon material is grown, by chemical vapor deposition, on a catalyst layer provided between a first and a second oxide layer of a multilayer film structure grown on a first substrate through chemical vapor deposition, and then separated from the first substrate by etching away the first and second oxide layers by a wet etching process. The separated nano-carbon material floats on the etchant, and is then pulled up by an etch-resistant continuous conveyance device and transferred to a second substrate. And, in a further imprinting process, large area nano-carbon material can be continuously imprinted onto the second substrate to show a particularly designed pattern.

Abstract: In a method and apparatus for transferring carbonaceous material layer, a carbonaceous material layer is grown on a growth substrate, and a first continuous conveying unit is used to feed the growth substrate and a transfer material, so that a gluing layer of the transfer material is attached to the carbonaceous material layer on the growth substrate. Then, a transformation device changes a viscosity of the gluing layer for the latter to adhere to the carbonaceous material layer. A second continuous conveying unit is further used to transfer and then separate the mutually adhered transfer material and growth substrate from each other, so that some part of the carbonaceous material layer is transferred onto the gluing layer while other part of the carbonaceous material layer remains on the growth substrate. Thus, at least a one-layer-thickness of the carbonaceous material layer is transferred.

Abstract: A real time dynamic meter for measuring input impedance and power of an RF plasma is provided. The meter comprises a hardware portion and a software portion. The hardware portion comprises voltage and current detectors and a signal processing unit. The software portion comprises a signal retrieving and analyzing unit. The meter can analyze the relationship between the inputted power of the plasma and the density of the plasma, and can measure ion current of the RF bias inputted power and analyze plasma etching phenomenon, thus the yield rate can be improved. In addition, the meter can also be applied to monitor instability of the RF plasma. The occurrence and amount of the instability can be detected timely, therefore, physical and chemical mechanisms for detecting instability characteristics can be provided.

Abstract: There is provided a process and its system for fabricating plasma with feedback control on plasma density. This process uses a heterodyne millimeter wave interferometer as a sensor to measure the plasma density in the process container and the plasma density that is needed in the plasma fabricating process, and then provides real-time information of the measurements to a digital control device which makes numerical calculations and then drives the RF power generator to change the RF output power so as to enable the plasma density in the plasma fabricating process to be close to the expected plasma density. The conventional operation parameter method is to control air pressure, RF power, gas flow quantity, temperature and so on. However, it does not control the plasma parameter that has the most direct influence on the process. Therefore, this method cannot guarantee that, in the process of fabricating wafers, different batches of wafers will be operated under similar process plasma conditions.

Abstract: This invention relates to an inductively-coupled high density plasma producing apparatus and a plasma processing equipment having the apparatus. The plasma processing equipment consists of a shape-adjustable coil (antenna), a RF power generator, an impedance matching network, a plasma chamber, a gas supply system, and a vacuum system. The gases for producing plasma are fed into the plasma chamber. The RF power is fed into the coil to produce plasma in the plasma chamber. This invention is characterized by the provision of a shape-adjustable coil, which is used to shape the RF power profile in the plasma chamber such that the plasma density profile (uniformity) can be controlled.