Patents by Inventor Kei Amagai

Kei Amagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10454008
    Abstract: A resin composition including an olefin resin, an alkenyl-containing alkoxy silane compound, and at least one inorganic filler selected from the group consisting of titanium oxide, alumina, talc, clay, aluminum, aluminum hydroxide, mica, iron oxide, graphite, carbon black, calcium carbonate, zinc sulfide, zinc oxide, barium sulfate, and potassium titanate; a reflector using the resin composition; a reflector-bearing lead frame; and a semiconductor light-emitting device. Accordingly, provided by the present invention are: a resin composition capable of expressing an excellent heat resistance (especially heat distortion resistance) even when it is made to a formed body; a reflector using the resin composition; a reflector-bearing lead frame; and a semiconductor light-emitting device.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: October 22, 2019
    Assignee: DAI NIPPON PRINTING CO., LTD.
    Inventors: Toshiyuki Sakai, Kei Amagai, Satoru Kanke, Aki Kimura, Toshimasa Takarabe, Katsuya Sakayori, Tomoki Sasou
  • Patent number: 10411174
    Abstract: A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuK? radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2? of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2? of more than 24° to 70° is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: September 10, 2019
    Assignee: DAI NIPPON PRINTING CO., LTD.
    Inventors: Aki Kimura, Katsuya Sakayori, Kei Amagai, Satoru Kanke, Toshiyuki Sakai, Toshimasa Takarabe, Makoto Mizoshiri
  • Patent number: 10400085
    Abstract: Provided are an electron beam curable resin composition including an olefin resin, a crosslinking agent, and a white pigment, in which the crosslinking agent has a saturated or unsaturated ring structure, at least one atom among atoms forming at least one ring is bonded to any allylic substituent of an allyl group, a methallyl group, an allyl group through a linking group, and a methallyl group through a linking group, and the white pigment is blended in an amount of more than 200 parts by mass and 500 parts by mass or less with respect to 100 parts by mass of olefin resin, a reflector resin frame using the resin composition, a reflector, a semiconductor light-emitting device, and a molding method using the resin composition.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: September 3, 2019
    Assignee: DAI NIPPON PRINTING CO., LTD.
    Inventors: Aki Kimura, Katsuya Sakayori, Toshiyuki Sakai, Toshimasa Takarabe, Kei Amagai, Kazunori Oda, Megumi Ooishi, Takeshi Sekiguchi, Kenzaburou Kawai, Kurumi Hashimoto
  • Publication number: 20170207376
    Abstract: A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuK? radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2? of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2? of more than 24° to 70° is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.
    Type: Application
    Filed: March 27, 2015
    Publication date: July 20, 2017
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventors: Aki KIMURA, Katsuya SAKAYORI, Kei AMAGAI, Satoru KANKE, Toshiyuki SAKAI, Toshimasa TAKARABE, Makoto MIZOSHIRI
  • Publication number: 20160372645
    Abstract: A resin composition including an olefin resin, an alkenyl-containing alkoxy silane compound, and at least one inorganic filler selected from the group consisting of titanium oxide, alumina, talc, clay, aluminum, aluminum hydroxide, mica, iron oxide, graphite, carbon black, calcium carbonate, zinc sulfide, zinc oxide, barium sulfate, and potassium titanate; a reflector using the resin composition; a reflector-bearing lead frame; and a semiconductor light-emitting device. Accordingly, provided by the present invention are: a resin composition capable of expressing an excellent heat resistance (especially heat distortion resistance) even when it is made to a formed body; a reflector using the resin composition; a reflector-bearing lead frame; and a semiconductor light-emitting device.
    Type: Application
    Filed: January 13, 2015
    Publication date: December 22, 2016
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventors: Toshiyuki SAKAI, Kei AMAGAI, Satoru KANKE, Aki KIMURA, Toshimasa TAKARABE, Katsuya SAKAYORI, Tomoki SASOU
  • Publication number: 20150372205
    Abstract: Provided are an electron beam curable resin composition including an olefin resin, and a crosslinking agent, in which the crosslinking agent has a saturated or unsaturated ring structure, at least one atom among atoms forming at least one ring is bonded to any allylic substituent of an allyl group, a methallyl group, an allyl group through a linking group, and a methallyl group through a linking group, and the crosslinking agent is blended in an amount of more than 15 parts by mass and 40 parts by mass or less with respect to 100 parts by mass of olefin resin, a reflector resin frame using the resin composition, a reflector, a semiconductor light-emitting device, and a molding method using the resin composition.
    Type: Application
    Filed: January 30, 2014
    Publication date: December 24, 2015
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventors: Aki KIMURA, Katsuya SAKAYORI, Toshiyuki SAKAI, Toshimasa TAKARABE, Kei AMAGAI, Kazunori ODA, Megumi OOISHI, Takeshi SEKIGUCHI, Kenzaburou KAWAI, Kurumi HASHIMOTO
  • Publication number: 20150361246
    Abstract: Provided are an electron beam curable resin composition including an olefin resin, a crosslinking agent, and a white pigment, in which the crosslinking agent has a saturated or unsaturated ring structure, at least one atom among atoms forming at least one ring is bonded to any allylic substituent of an allyl group, a methallyl group, an allyl group through a linking group, and a methallyl group through a linking group, and the white pigment is blended in an amount of more than 200 parts by mass and 500 parts by mass or less with respect to 100 parts by mass of olefin resin, a reflector resin frame using the resin composition, a reflector, a semiconductor light-emitting device, and a molding method using the resin composition.
    Type: Application
    Filed: January 30, 2014
    Publication date: December 17, 2015
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventors: Aki KIMURA, Katsuya SAKAYORI, Toshiyuki SAKAI, Toshimasa TAKARABE, Kei AMAGAI, Kazunori ODA, Megumi OOISHI, Takeshi SEKIGUCHI, Kenzaburou KAWAI, Kurumi Hashimoto
  • Patent number: 9024312
    Abstract: Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element which has excellent surface smoothness and is capable of suppressing deterioration of the characteristics of thin film elements. Also disclosed are methods for manufacturing substrates for thin film elements.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: May 5, 2015
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Shunji Fukuda, Katsuya Sakayori, Keita Arihara, Koji Ichimura, Kei Amagai
  • Publication number: 20120187399
    Abstract: Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element which has excellent surface smoothness and is capable of suppressing deterioration of the characteristics of thin film elements. Also disclosed are methods for manufacturing substrates for thin film elements.
    Type: Application
    Filed: September 29, 2010
    Publication date: July 26, 2012
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventors: Shunji Fukuda, Katsuya Sakayori, Keita Arihara, Koji Ichimura, Kei Amagai