Abstract: A method for producing a group III nitride semiconductor includes a loading step (S1), a decompression step (S2), a heating step (S3), an excitation gas supply step (S5), and an organometallic gas supply step (S6). In the loading step (Si), a substrate is loaded into a chamber. In the decompression step (S2), a suction part reduces a pressure inside the chamber. In the heating step (S3), a heater provided inside the chamber heats the substrate. In the excitation gas supply step (S5), a first gas that contains nitrogen without containing hydrogen is supplied to a plasma generator, and an excitation gas obtained by turning the first gas into plasma by the plasma generator is supplied to the substrate inside the chamber. In the organometallic gas supply step (S6), a second gas that is an organometallic gas that contains a group III element is supplied to the substrate inside the chamber.

Abstract: A contact state estimating device includes: a first and a second electrode brought into contact with an object to be measured; a direct current voltage supply unit; a signal switching unit configured to switch a first pathway through which the direct current voltage supply unit supplies direct current voltage to the first electrode and an output signal from the second electrode is output and a second pathway through which the direct current voltage supply unit supplies direct current voltage to the second electrode and an output signal from the first electrode is output to each other; and a contact state estimating unit configured to estimate a contact state of the first electrode or the second electrode with the object, based on the output signal acquired at a timing at which a pulse noise is anticipated to occur in association with switching between the first pathway and the second pathway.

Abstract: A contact state estimating device includes: a first and a second electrode brought into contact with an object to be measured; a direct current voltage supply unit; a signal switching unit configured to switch a first pathway through which the direct current voltage supply unit supplies direct current voltage to the first electrode and an output signal from the second electrode is output and a second pathway through which the direct current voltage supply unit supplies direct current voltage to the second electrode and an output signal from the first electrode is output to each other; and a contact state estimating unit configured to estimate a contact state of the first electrode or the second electrode with the object , based on the output signal acquired at a timing at which a pulse noise is anticipated to occur in association with switching between the first pathway and the second pathway.

Abstract: A vital signal measuring apparatus is attached to a living body to measure a vital signal of the living body, which includes an amplifier, an A/D converter, a processing unit, an n-th-order differential signal output unit, and an output unit. The amplifier and the A/D converter constitute a vital signal measuring unit for measuring a vital signal from a vital signal sensor and outputting a first signal corresponding to the vital signal. A time differentiation signal output unit includes the n-th-order differential signal output unit for receiving the first signal and outputting an n-th-order time differentiation signal (where n is an integer of 1 or more) of the first signal. The processing unit functions as a contact condition determination unit for determining contact condition between the vital signal measuring apparatus and the living body based on the n-th-order time differentiation signal.