Abstract: A semiconductor apparatus includes a semiconductor device that performs signal processing, a driving control unit that controls drive of the semiconductor device, and a lifetime obtaining unit that obtains remaining lifetime information that represents a remaining lifetime of the semiconductor device. In a case where the remaining lifetime information represents a first length, the driving control unit drives the semiconductor device in a first condition. In a case where the remaining lifetime information represents a second length shorter than the first length, the driving control unit drives the semiconductor device in a second condition in which throughput of the signal processing is lower than that in a case where the semiconductor device is driven in the first condition, and the remaining lifetime of the semiconductor device is longer than that in the case where the semiconductor device is driven in the first condition.

Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

Abstract: A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, a second substrate layered on the first substrate and including an AD conversion portion including a plurality of AD conversion circuits configured to convert a signal output from the first substrate into a digital signal, wherein the second substrate further includes a plurality of signal processing units including a first signal processing unit and a second signal processing unit both configured to perform machine learning processing, wherein each of a plurality of sets includes a plurality of AD conversion circuits that differ between the plurality of sets, wherein the first signal processing unit is arranged to correspond to one of the plurality of sets, and wherein the second signal processing unit is arranged to correspond to another one of the plurality of sets.

Abstract: A semiconductor device comprising: a voltage generator configured to generate a voltage; a first analog-to-digital (AD) converter configured to convert an analog value based on a voltage generated by the voltage generator into a first digital value; and a second AD converter configured to convert an analog value based on a voltage generated by the voltage generator into a second digital value, wherein the voltage generator generates voltages by dividing a power supply voltage by resistive elements.

Abstract: A device that is configured to perform image capturing using a sensor for setting an exposure condition on a region-by-region basis, the device includes an issuance unit configured to issue a plurality of shutter pulses each corresponding to a different time of a plurality of exposure times, a first generation unit configured to generate a mask signal for masking of the plurality of shutter pulses in accordance with an exposure time setting of each of regions, and a second generation unit configured to generate signals to be used for each of the regions, by masking the plurality of shutter pulses in accordance with the mask signal and combining the masked plurality of shutter pulses or the plurality of shutter pulses without being masked with a read pulse.

Abstract: An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Abstract: A photoelectric conversion device includes a pixel region where pixels are arranged to form rows and columns, and a pixel control circuit that supplies control signals to the pixels. The pixel region includes first to fourth regions, a first pixel in the first region and a second pixel in the second region are arranged on different columns on a first row, a third pixel in the third region and a fourth pixel in the fourth region are arranged on different rows on a first column, and the first row on which the first and second pixels are arranged is arranged between rows on which the third and fourth pixels are arranged. The pixel control circuit simultaneously reads out pixel signals of the first and second pixels in a first period and simultaneously reads out pixel signals of the third and fourth pixels in a second period.

Abstract: A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, a second substrate layered on the first substrate and including an AD conversion portion including a plurality of AD conversion circuits configured to convert a signal output from the first substrate into a digital signal, wherein the second substrate further includes a plurality of signal processing units including a first signal processing unit and a second signal processing unit both configured to perform machine learning processing, wherein each of a plurality of sets includes a plurality of AD conversion circuits that differ between the plurality of sets, wherein the first signal processing unit is arranged to correspond to one of the plurality of sets, and wherein the second signal processing unit is arranged to correspond to another one of the plurality of sets.

Abstract: A photoelectric conversion device includes a pixel region where pixels are arranged to form rows and columns, and a pixel control circuit that supplies control signals to the pixels. The pixel region includes first to fourth regions, a first pixel in the first region and a second pixel in the second region are arranged on different columns on a first row, a third pixel in the third region and a fourth pixel in the fourth region are arranged on different rows on a first column, and the first row on which the first and second pixels are arranged is arranged between rows on which the third and fourth pixels are arranged. The pixel control circuit simultaneously reads out pixel signals of the first and second pixels in a first period and simultaneously reads out pixel signals of the third and fourth pixels in a second period.

Abstract: A semiconductor device comprising: a voltage generator configured to generate a voltage; a first analog-to-digital (AD) converter configured to convert an analog value based on a voltage generated by the voltage generator into a first digital value; and a second AD converter configured to convert an analog value based on a voltage generated by the voltage generator into a second digital value, wherein the voltage generator generates voltages by dividing a power supply voltage by resistive elements.

Abstract: A photoelectric conversion device includes a pixel region where pixels are arranged to form rows and columns, and a pixel control circuit that supplies control signals to the pixels. The pixel region includes first to fourth regions, a first pixel in the first region and a second pixel in the second region are arranged on different columns on a first row, a third pixel in the third region and a fourth pixel in the fourth region are arranged on different rows on a first column, and the first row on which the first and second pixels are arranged is arranged between rows on which the third and fourth pixels are arranged. The pixel control circuit simultaneously reads out pixel signals of the first and second pixels in a first period and simultaneously reads out pixel signals of the third and fourth pixels in a second period.

Abstract: An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Abstract: An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Abstract: A semiconductor apparatus includes a semiconductor device that performs signal processing, a driving control unit that controls drive of the semiconductor device, and a lifetime obtaining unit that obtains remaining lifetime information that represents a remaining lifetime of the semiconductor device. In a case where the remaining lifetime information represents a first length, the driving control unit drives the semiconductor device in a first condition. In a case where the remaining lifetime information represents a second length shorter than the first length, the driving control unit drives the semiconductor device in a second condition in which throughput of the signal processing is lower than that in a case where the semiconductor device is driven in the first condition, and the remaining lifetime of the semiconductor device is longer than that in the case where the semiconductor device is driven in the first condition.

Abstract: A photoelectric conversion device includes a pixel region where pixels are arranged to form rows and columns, and a pixel control circuit that supplies control signals to the pixels. The pixel region includes first to fourth regions, a first pixel in the first region and a second pixel in the second region are arranged on different columns on a first row, a third pixel in the third region and a fourth pixel in the fourth region are arranged on different rows on a first column, and the first row on which the first and second pixels are arranged is arranged between rows on which the third and fourth pixels are arranged. The pixel control circuit simultaneously reads out pixel signals of the first and second pixels in a first period and simultaneously reads out pixel signals of the third and fourth pixels in a second period.

Abstract: Provided is an imaging device configured to sequentially perform AD conversion for A signals of pixels of the first row, A signals of pixels of the second row, A+B signals of the pixels of the first row, and A+B signals of the pixels of the second row.

Abstract: An image capturing apparatus includes a plurality of pixels arranged on a substrate, a temperature signal output unit arranged on the substrate and configured to output a temperature signal representing a temperature, and a reference signal output unit arranged on the substrate and configured to output a reference signal used to correct the temperature signal. The temperature signal output unit and the reference signal output unit are arranged in regions different from each other on the substrate.

Abstract: Provided is an imaging device including a pixel array including pixels; a readout circuit that reads out signals from the pixels; a temperature sensor that outputs a signal in accordance with a temperature; and a current control circuit that controls a current supplied to the temperature sensor. The current control circuit performs control in a first period such that a predetermined current is supplied to the temperature sensor, and performs control in a second period such that a current supplied to the temperature sensor becomes smaller than the predetermined current or stops. The first period is set in a first blanking period between a process in which the first readout circuit reads out one frame of signals output from the pixels and a process in which the first readout circuit reads out next one frame of signals output from the pixels.

Abstract: A photoelectric conversion device includes a plurality of pixels. Each pixel includes an amplification transistor that has an input node configured to receive electric charge generated through photoelectric conversion, a reset transistor, and a capacitance control unit. In a state where the reset transistor is off, the capacitance control unit switches a capacitance of the input node from a first capacitance value to a second capacitance value, which is greater than the first capacitance value. Subsequently, the reset transistor is controlled from off to on in a state where the capacitance of the input node has been controlled to the second capacitance value. After the reset operation, the amplification transistor outputs a pixel signal in a state where the capacitance of the input node is the first capacitance value.

Abstract: An imaging apparatus includes a first reset signal line which is commonly connected to multiple first comparator circuits and through which a first reset signal to reset a threshold value of each of the multiple first comparator circuits is transmitted, a second reset signal line which is commonly connected to multiple second comparator circuits and through which a second reset signal to reset a threshold value of each of the multiple second comparator circuits is transmitted, and a shield line. The distance between the first reset signal line and the shield line and the distance between the second reset signal line and the shield line are smaller than the distance between the first reset signal line and the second reset signal line.