Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrode 8 formed on an organic semiconductor film 2 made of an organic semiconductor material with a gate insulating film 3 interposed therebetween; and a source electrode 6 and a drain electrode 7 provided so as to come in contacts with the organic semiconductor film with the gate electrode 8 interposed therebetween. At least one of the source electrode 6 and the drain electrode 7 is formed in contact with the organic semiconductor film 2 with charge injection layers 4 and 5 made of an inorganic material interposed therebetween.

Abstract: An organic EL device which can be driven over a wide range of from low brightness to high brightness used in light source applications, which works stably over a wide range of brightness, and which has excellent life property is provided. The organic EL device comprises at least one pair of electrodes 2 and 5, and a plurality of functional layers between the electrodes 2 and 5. The functional layers include a layer having a light emitting function 4, which is composed of at least one organic compound having a dendritic structure, and a charge injection layer 3, which is composed of at least one inorganic material.

Abstract: An organic electroluminescent device that can be driven over a wide brightness range from low brightness used in display applications to high brightness used in light sources, can be stably operated over a wide brightness range, is less in fluctuation between pixels, is high in the emission efficiency, is excellent in the life characteristics and has a plurality of light emitting portions is provided. An organic electroluminescent device includes a plurality of light emitting portions on a glass substrate, the light emitting portion including a pair of electrodes (anode, cathode), a light emitting layer interposed between the electrodes and a transition metal oxide layer disposed between at least one of the electrodes and the light emitting layer, the transition metal oxide layer being formed over the plurality of light emitting portions.

Abstract: To provide an organic electroluminescent element having uniform luminescence properties stable in operation and excellent in life property, an organic electroluminescent element in which a luminescent layer is provided between a positive electrode and a negative electrode, wherein a buffer layer constituted with a transition metal oxide (for example, molybdenum oxide) is provided between the negative electrode and the luminescent layer.

Abstract: To provide an exposure device which is capable of controlling light intensity with high precision by improving reliability of light intensity detection, and an image forming apparatus using the same, an exposure device includes a light emitting device array having a plurality of organic electroluminescence devices 110 arranged on a substrate, a light detecting device 120 that detects light emitted from the organic electroluminescence devices 110, and a light intensity detecting circuit C that processes an output of the light detecting device 120. The light intensity detecting unit C includes a capacitive element 140 connected to the light detecting device 120 and a select transistor 130 that is connected to the capacitive element 140 and draws out charges accumulated in the capacitive element 140. The select transistor 130 and the light detecting device 120 are isolated from each other with the capacitive element 140 interposed therebetween.

Abstract: An image forming apparatus includes a photoconductor 8 which bears an image to be formed by exposure, a light emission part 600 which emits light for exposing the photoconductor 8 to the light, and a light quantity measuring part 700 which measures the quantity of the light emitted from the light emission part 600 and outputs a light quantity measuring signal. The light quantity measuring signal of the light quantity measuring part 700 is sent through an engine control part 42 to a controller 41, and the quantity of the light emitted from the light emission part 600 is controlled so that the light quantity measuring signal becomes a predetermined value. Here, a sign indicating inclination (change rate) of the light quantity measuring signal of the light quantity measuring part 700 for temperature is matched with a sign indicating inclination (change rate) of sensitivity of the photoconductor 8 for temperature.

Abstract: To provide an electroluminescent device that is operable over a wide range from low luminance corresponding to a display apparatus, such as a display, to high luminance corresponding to, for example, a lighting apparatus or an exposure apparatus used for an image forming apparatus, is stably operable over the wide range of luminance, and has a satisfactory operating life characteristic even if the electroluminescent device has emitted light with high luminance, a display apparatus, an exposure apparatus, and a lighting apparatus using the same, an electroluminescent device includes a light emitting portion 5 having at least p-type semiconductor particles 10 and n-type semiconductor particles 11, and emission centers are provided in at least a type of semiconductor particles of the p-type semiconductor particles and the n-type semiconductor particles.

Abstract: There is provided a light emitting apparatus for which sealing can be carried out with a simple step using a thermosetting resin as a material for a sealing part, and which has ensured a sufficient gas barrier property without damaging an organic electroluminescence element by heat, and further while using a simple sealing step. The apparatus was configured so as to have a substrate 2, a plurality of light emitting parts formed using a polymer organic electroluminescence material formed on the substrate 2, an electrode (cathode 7) covering the light emitting parts LS, and a sealing part 10 including a thermosetting resin, covering at least the wider region than this electrode (cathode 7).

Abstract: In an image forming apparatus, comprising: an optical recording head having a light emitting element array including two or more sets of light emitting element blocks arranged in a line in a main scanning direction, each block including a given number of light emitting elements arranged in a line in the main scanning direction; and, a photo conductor exposable by the light from the optical recording head, the light emitting elements of the light emitting element blocks each having a slow light emitting timing are arranged such that they are shifted downstream in the sub scanning moving direction of the photo conductor according to the light emitting timings thereof with respect to the light emitting elements each having a fast light emitting timing.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: The organic photoelectric conversion element according to the invention has enhanced the light-absorbing property by incorporating two or more kinds of electron donating organic materials 4a and 4b in the photoelectric conversion region 14. With such measure, it has become possible to efficiently absorb the incident light and enhance the photoelectric conversion characteristic. In addition, a light-to-light conversion material 7 is incorporated in the photoelectric conversion region, too. With this measure, even the light of such a wavelength that an electron donating organic material cannot inherently absorb comes to be absorbed since the light-to-light conversion material 7 converts the wavelength, thus enabling the light to be utilized for carrier generation. Accordingly, an organic photoelectric conversion element with a high conversion efficiency can be obtained.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1?a1?b1?xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrode 8 formed on an organic semiconductor film 2 made of an organic semiconductor material with a gate insulating film 3 interposed therebetween; and a source electrode 6 and a drain electrode 7 provided so as to come in contacts with the organic semiconductor film with the gate electrode 8 interposed therebetween. At least one of the source electrode 6 and the drain electrode 7 is formed in contact with the organic semiconductor film 2 with charge injection layers 4 and 5 made of an inorganic material interposed therebetween.

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Abstract: The organic photoelectric conversion element in accordance with the invention comprises at least one pair of electrodes 12 and 16, a photoelectric conversion region (layer) 15 arranged between the electrodes and containing at least an electron donating organic material and an electron accepting organic material, and a buffer layer 14 containing at least one inorganic matter and inserted between the photoelectric conversion region and at least one electrode of the above-cited pair of electrodes.

Abstract: An organic information reading sensor comprising a plurality of light receiving sections for interposing at least one kind of organic material between electrodes and converting a light signal into an electric signal, wherein a non-translucent insulator is provided between the light receiving sections.

Abstract: An organic EL device which drives over a wide range from low brightness to high brightness for light source applications, operates stably over a wide range of brightness and has excellent life property is provided. The device comprises at least one pair of electrodes 2 and 5, and a plurality of functional layers disposed between the electrodes 2 and 5, the functional layers comprising a layer 4 having the light emitting function, which is composed of at least one polymeric material and contains an organic solvent and a charge injection layer 3 composed of at least one inorganic material.

Abstract: The organic photoelectric conversion element according to the invention has enhanced the light-absorbing property by incorporating two or more kinds of electron donating organic materials 4a and 4b in the photoelectric conversion region 14. With such measure, it has become possible to efficiently absorb the incident light and enhance the photoelectric conversion characteristic. In addition, a light-to-light conversion material 7 is incorporated in the photoelectric conversion region, too. With this measure, even the light of such a wavelength that an electron donating organic material cannot inherently absorb comes to be absorbed since the light-to-light conversion material 7 converts the wavelength, thus enabling the light to be utilized for carrier generation. Accordingly, an organic photoelectric conversion element with a high conversion efficiency can be obtained.