Abstract: Provided is a method for highly efficiently producing highly pure single-walled carbon nanotubes. This method for producing carbon nanotubes by fluidized CVD includes: a step for heating a material (A) to 1200° C. or higher, in which the total mass of Al2O3 and SiO2 constitutes at least 90% of the total mass of the material (A) and the mass ratio of Al2O3/SiO2 is in the range of 1.0-2.3; and a step for bringing a gas, which is present in the environment in which the material (A) is being heated to 1200° C. or higher, into contact with a feed gas to generate carbon nanotubes.

Abstract: A CNT production apparatus 1 provided by the present invention includes a cylindrical chamber 10 and a control valve 60 provided to a gas discharge pipe 50. The chamber 10 includes a reaction zone provided in a partial range of the chamber 10 in the direction of the cylinder axis, a deposition zone 22 which is provided downstream of the reaction zone 20, and a deposition state detector 40 that detects a physical property value indicating a deposition state of carbon nanotubes in the deposition zone 22. The apparatus is configured to close the control valve 60 and deposit carbon nanotubes in the deposition zone 22 when the physical property value detected by the deposition state detector 40 is equal to or less than a predetermined threshold value, and configured to open the control valve 60 and recover the carbon nanotubes deposited in the deposition zone 22 when the physical property value exceeds the predetermined threshold value.

Abstract: A gas leakage detection system 1 with high detection accuracy for a remaining gas amount and a gas leakage amount of an insulation gas 28 in a container 27 forming a electrical apparatus 2 is provided.

Abstract: Provided is a method for highly efficiently producing highly pure single-walled carbon nanotubes. This method for producing carbon nanotubes by fluidized CVD includes: a step for heating a material (A) to 1200° C. or higher, in which the total mass of Al2O3 and SiO2 constitutes at least 90% of the total mass of the material (A) and the mass ratio of Al2O3/SiO2 is in the range of 1.0-2.3; and a step for bringing a gas, which is present in the environment in which the material (A) is being heated to 1200° C. or higher, into contact with a feed gas to generate carbon nanotubes.

Abstract: To provide an inhibitor of melanin decomposition, which inhibits decomposition of melanin in keratinocytes to accelerate accumulation of melanin in skin and hair. An inhibitor of melanin decomposition in keratinocytes, comprising at least one selected from the group consisting of a plant extract containing berberine or a salt thereof, berberine or a salt thereof, proguanil or a salt thereof and phenformin or a salt thereof, as an active ingredient.

Abstract: An on-load tap changing apparatus includes a first switching unit connected to a first tap of a transformer provided in a power system and switching power supplied from the first tap, a first impedance changing unit connected in series with the first switching unit and increasing an impedance when the first switching unit executes a switching operation, a second switching unit connected to a second tap of the transformer and switching power supplied from the second tap, and a second impedance changing unit connected in series with the second switching unit and increasing an impedance when the second switching unit executes a switching operation. The on-load tap changing apparatus can suppress an arc at the time of switching, reduce deterioration of a switching unit, and have excellent durability.

Abstract: To provide an inhibitor of melanin decomposition, which inhibits decomposition of melanin in keratinocytes to accelerate accumulation of melanin in skin and hair. An inhibitor of melanin decomposition in keratinocytes, comprising at least one selected from the group consisting of a plant extract containing berberine or a salt thereof, berberine or a salt thereof, proguanil or a salt thereof and phenformin or a salt thereof, as an active ingredient.

Abstract: A CNT production apparatus 1 provided by the present invention includes a cylindrical chamber 10 and a control valve 60 provided to a gas discharge pipe 50. The chamber 10 includes a reaction zone provided in a partial range of the chamber 10 in the direction of the cylinder axis, a deposition zone 22 which is provided downstream of the reaction zone 20, and a deposition state detector 40 that detects a physical property value indicating a deposition state of carbon nanotubes in the deposition zone 22. The apparatus is configured to close the control valve 60 and deposit carbon nanotubes in the deposition zone 22 when the physical property value detected by the deposition state detector 40 is equal to or less than a predetermined threshold value, and configured to open the control valve 60 and recover the carbon nanotubes deposited in the deposition zone 22 when the physical property value exceeds the predetermined threshold value.

Abstract: A stationary induction electric apparatus includes a porcelain tube, a connection conductor, a conductor, a casing, a lead, a terminal, a spacer, an electric connection member and a first and a second insulating medium. The connection conductor is disposed at one end of the porcelain tube. The conductor is disposed in the porcelain tube, and connected to the connection conductor. The casing covers a stationary induction electric apparatus main body, and has an opening part. The lead extends from the main body to the opening part. The terminal is disposed at an end part of the lead. The spacer seals the other end of the porcelain tube and the opening part. The member includes an electrode connected to the terminal and a joint part connected to the conductor, and penetrates the spacer. The first and second insulating media are respectively filled in the porcelain tube and the casing.

Abstract: A stationary induction electric apparatus includes a porcelain tube, a connection conductor, a conductor, a casing, a lead, a terminal, a spacer, an electric connection member and a first and a second insulating medium. The connection conductor is disposed at one end of the porcelain tube. The conductor is disposed in the porcelain tube, and connected to the connection conductor. The casing covers a stationary induction electric apparatus main body, and has an opening part. The lead extends from the main body to the opening part. The terminal is disposed at an end part of the lead. The spacer seals the other end of the porcelain tube and the opening part. The member includes an electrode connected to the terminal and a joint part connected to the conductor, and penetrates the spacer. The first and second insulating media are respectively filled in the porcelain tube and the casing.

Abstract: A stationary induction electric apparatus includes a porcelain tube, a connection conductor, a conductor, a casing, a lead, a terminal, a spacer, an electric connection member and a first and a second insulating medium. The connection conductor is disposed at one end of the porcelain tube. The conductor is disposed in the porcelain tube, and connected to the connection conductor. The casing covers a stationary induction electric apparatus main body, and has an opening part. The lead extends from the main body to the opening part. The terminal is disposed at an end part of the lead. The spacer seals the other end of the porcelain tube and the opening part. The member includes an electrode connected to the terminal and a joint part connected to the conductor, and penetrates the spacer. The first and second insulating media are respectively filled in the porcelain tube and the casing.

Abstract: A semiconductor memory device includes sense amplifier circuits each having a latch circuit connected to a sense node and storing circuits for storing identification data indicating sense amplifier circuits instructed to perform program when program data is loaded into the sense amplifier circuits. Before program verify read operation, data in the sense amplifier circuits instructed to perform programming by the loaded data is reset to the loaded data on the basis of the identification data in the storing circuits. This suppresses any rise in the potential of the common source line of a plurality of memory cells when a program verify operation is performed or when a page divisional program operation is performed, or suppresses any difference between the common source line potential rises in a program verify read operation and a normal read operation, thereby preventing incomplete programming. This improves the reliability of the program verify read operation and the page divisional program operation.

Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.

Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.