Abstract: A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base.

Abstract: A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base.

Abstract: A semiconductor laser driving method, which is usable in an optical disc apparatus, for example, makes it possible to use a semiconductor laser in a low noise condition when the semiconductor laser is RF-modulated, by driving the semiconductor laser under a conditions where the average optical output is offset from peaks appearing in a curve representing the relative intensity of noise to average optical output characteristics of the semiconductor laser. More specifically, RF modulating conditions (frequency, amplitude and waveform) are selected so that the peaks do not enter the range of P*±0.5 mW relative to the practically used average optical output P*, for example.

Abstract: A semiconductor laser driving method, which is usable in an optical disc apparatus, for example, makes it possible to use a semiconductor laser in a low noise condition when the semiconductor laser is RF-modulated, by driving the semiconductor laser under a conditions where the average optical output is offset from peaks appearing in a curve representing the relative intensity of noise to average optical output characteristics of the semiconductor laser. More specifically, RF modulating conditions (frequency, amplitude and waveform) are selected so that the peaks do not enter the range of P*±0.5 mW relative to the practically used average optical output P*, for example.

Abstract: A semiconductor laser driving method, which is usable in an optical disc apparatus, for example, makes it possible to use a semiconductor laser in a low noise condition when the semiconductor laser is RF-modulated, by driving the semiconductor laser under a conditions where the average optical output is offset from peaks appearing in a curve representing the relative intensity of noise to average optical output characteristics of the semiconductor laser. More specifically, RF modulating conditions (frequency, amplitude and waveform) are selected so that the peaks do not enter the range of P*±0.5 mW relative to the practically used average optical output P*, for example.

Abstract: A semiconductor laser driving method, which is usable in an optical disc apparatus, for example, makes it possible to use a semiconductor laser in a low noise condition when the semiconductor laser is RF-modulated, by driving the semiconductor laser under a conditions where the average optical output is offset from peaks appearing in a curve representing the relative intensity of noise to average optical output characteristics of the semiconductor laser. More specifically, RF modulating conditions (frequency, amplitude and waveform) are selected so that the peaks do not enter the range of P−0.5 mW relative to the practically used average optical output P* for example.

Abstract: A dual gate field effect transistor including first and second gates comprises a conductive region, wherein a potential difference between a second gate electrode section and the conductive region is larger than that between the second gate electrode section and a channel operation region.

Abstract: Holes are formed in a major surface of a hybrid IC insulating substrate mounting an optical semiconductor element, and terminal pins of a package are connected and fixed to the substrate while head portions of the terminal pins are inserted in the corresponding holes. Since the terminal pins do not protrude outside the major surface of the insulating substrate, a space therefor can be omitted, and the terminal pins are directly connected to the insulating substrate without being separated from each other. Furthermore, since the head portions of the terminal pins are inserted in the corresponding holes of the insulating substrate, they can be automatically aligned. In case that each hole has a tapered inner surface, insertion of the terminal pins can be further facilitated.

Abstract: This invention relates to an optical module for coupling an optically operative device with an optical fiber. Near the optically operative device, the module includes a fiber saddle on which the optical fiber is affixed by soldering to optically connect the operative device and the fiber. The fiber saddle is provided on a heat insulative substrate, which also mounts the optically operative device, so that heat for melting the solder will not be conducted through the fiber saddle when the optical fiber is soldered to the saddle. Thus, the temperature necessary for soldering can be attained rapidly. A mounting surface of the fiber saddle is plated with solder. A pre-formed solder structure is bridged over the optical fiber after it is positioned on the fixation surface. The pre-formed structure is melted and then allowed to solidify whereby the optical fiber is affixed to the fiber saddle to prevent dislocation of the fiber.