Abstract: A refrigeration cycle device includes a compressor, a condenser, a first decompressor, an outside heat exchanger, and an evaporator. A predetermined part of a refrigerant passage from the condenser to the first decompressor through which the refrigerant flows is a condenser outlet portion. A predetermined part of a refrigerant passage from the first decompressor to the outside heat exchanger through which the refrigerant flows is an outside heat exchanger inlet portion. A predetermined part of a refrigerant passage from the outside heat exchanger to the second decompressor through which the refrigerant flows is an outside heat exchanger outlet portion. A volume capacity of the condenser outlet portion is larger than a volume capacity of the outside heat exchanger inlet portion. According to the refrigeration cycle device, preferable coefficient of performance of cycle can be achieved in different operation modes.

Abstract: A semiconductor device includes an interconnect substrate, an interconnect trace disposed on an upper surface of the interconnect substrate, a semiconductor chip mounted on the upper surface of the interconnect substrate, an adhesive resin layer disposed between the upper surface of the interconnect substrate and a lower surface of the semiconductor chip to bond the interconnect substrate and the semiconductor chip, the adhesive resin layer including an opening at a bottom of which an upper surface of the interconnect trace is situated, a barrier layer covering a sidewall of the opening, and conductive paste disposed inside the opening, wherein an electrode terminal of the semiconductor chip situated at the lower surface thereof is disposed inside the opening, with the conductive paste filling a space between the barrier layer and the electrode terminal.

Abstract: An air conditioner is provided with: a refrigeration cycle including a subcooling heat exchanger that subcools a refrigerant having heat-dissipated in a high-pressure side heat exchanger by exchanging heat with a heat medium; a blower that blows the air to an air passage in an air-conditioning casing; an air cooler disposed in the air passage to cool the air; a heater core disposed on an air flow downstream side of the air cooler in the air passage to heat the air cooled by the air cooler; an auxiliary air heater disposed on the air flow downstream side of the air cooler and on an air flow upstream side of the air heater in the air passage, to heat the air cooled by the air cooler by exchanging heat with the heat medium; and a flow-rate adjustment portion configured to adjust a flow rate of the heat medium circulating between the subcooling heat exchanger and the auxiliary air heater.

Abstract: A thermal management device for a vehicle includes heat medium circuits, a reserve tank, and a connector. The heat medium circulates through the heat medium circuits separately. The reserve tank is configured to separate an air bubble contained in the heat medium from the heat medium. The connector allows the reserve tank to come in communication with the heat medium circuits selectively. As such, an occurrence of the heat loss in the degassing performed in the reserve tank can be suppressed with the thermal management device for a vehicle including the heat medium circuits.

Abstract: A thermal management device includes a waste-heat supply device that supplies waste heat to a heat medium flowing through a second heat medium path portion, a heater core that exchanges heat between air and the heat medium, a switching valve that switches between a state in which the heat medium circulates between the heater core and a first heat medium path portion and a state in which the heat medium circulates between the heater core and the second heat medium path portion, an adjustment portion that adjusts a temperature of the heat medium in the first heat medium path portion, and a controller. The controller controls the adjustment portion such that the temperature of the heat medium in the first heat medium path portion is equal to or higher than a predetermined temperature when the switching valve circulates the heat medium between the heater core and the second heat medium path portion.

Abstract: A refrigeration cycle device includes: a first expansion valve that decompresses a refrigerant flowing out of a high-pressure side heat exchanger; an exterior heat exchanger that exchanges heat between the refrigerant flowing out of the first expansion valve and outside air; a second expansion valve that decompresses the refrigerant flowing out of the exterior heat exchanger; a low-pressure side heat exchanger arranged in series with the exterior heat exchanger; a cooler core that exchanges heat between the heat medium cooled by the low-pressure side heat exchanger and air to be blown into a vehicle interior to cool the air; and a controller configured to switch between a heat absorption mode and a heat dissipation mode by adjusting an amount of decompression in each of the first expansion valve and the second expansion valve.

Abstract: A vehicular heat management system includes a heat medium circuit, a heat source portion, and a device. A heat medium cooling an engine circulates in the heat medium circuit. The heat source portion heats the heat medium. The device is configured to function and heat the heat medium when the heat medium flowing into the device is at or above a predetermined temperature. When the engine is being warmed up, heat generated by the heat source portion is supplied to the device in preference to the engine. According to this, since the heat generated by the heat source portion is supplied to the device in preference to the engine when the engine is being warmed up, the engine can be warmed up early.

Abstract: A wiring substrate includes a substrate body, a post formed on an upper surface of the substrate body, a thin film capacitor, and a first insulation layer covering the thin film capacitor and the post. The thin film capacitor includes a reference hole extending through the thin film capacitor in a thickness-wise direction. The post is inserted through the reference hole.

Abstract: A vehicular heat management device includes a first heat source, a second heat source, a heater core, a first heat medium pathway, a second heat medium pathway, a heater core pathway, a switching portion, and a control unit. The first heat source is provided in the first heat medium pathway, and the second heat source is provided in the second heat medium pathway. The heater core is provided in the heater core pathway. The switching portion switches between flowing connection and flowing disconnection. The control unit performs at least one of a switching control and a second heat source control when a temperature of the heat medium of the heater core pathway is at or above a predetermined temperature. In the switching control, the switching portion connects the second heat medium pathway to the heater core pathway. In the second heat source control, the second heat source generates heat.

Abstract: A vehicular heat management device includes a first heat source, a second heat source, a first heat generator, a second heat generator, a heat generator pathway, a first heat source pathway, a second heat source pathway, and a switching portion. The first heat source and the second heat source heat a heat medium. The first heat generator generates heat according to operation. The second heat generator generates heat according to operation. The first heat generator and the second heat generator are provided in the heat generator pathway. The first heat generator is provided in the first heat generator pathway. The second heat generator is provided in the second heat generator pathway. The switching portion switches between a condition where the heat generator pathway is in flowing communication with the first heat generator pathway and a condition where the heat generator pathway is in flowing communication with the second heat generator pathway.

Abstract: A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved.

Abstract: An anodizing device has: a power supply drum that supports, in close contact therewith, a web consisting of an anodizable metal and has a part configured with a conductive material, to which the web is closely attached; a counter electrode provided facing the power supply drum; an electrolysis tank filled with an electrolyte, into which part of the power supply drum and the counter electrode are immersed; a protection member formed of a non-conductive material that protects the lateral direction end portions of the web supported by the power supply drum in close contact therewith and a portion of the power supply drum, to which the web is not closely attached, from the electrolyte; and a driver adapted to make the web and the protection member travel concurrently in the electrolyte in synchronization with the circumferential speed of the power supply drum.

Abstract: A data recording apparatus includes an acquisition unit configured to acquire a first type data and a second type data, and a recording unit configured to record the first type data or the second type data acquired by the acquisition unit in a recording medium. The recording unit refers to a first pointer which indicates a logical position regarding the first type data in the recording medium to determine a position to start recording the first type data based on the logical position indicated by the first pointer. The recording unit refers to a second pointer which indicates a logical position regarding the second type data in the recording medium to determine a position to start recording the second type data based on the logical position indicated by the second pointer.

Abstract: An insulating layer provided metal substrate, including a metal substrate having a metallic aluminum on at least one surface and a composite structure layer formed of a porous aluminum oxide film provided on the metallic aluminum by anodization and an alkali metal silicate film covering pore surfaces of the porous aluminum oxide film, in which the mass ratio of silicon to aluminum in the composite structure layer is 0.001 to 0.2 at an arbitrary position within a region between a position 1 ?m to the composite structure layer side in thickness from the interface between the composite structure layer and the metallic aluminum and a position 1 ?m to the composite structure layer side in thickness from the interface between the composite structure layer and an upper layer on the opposite side of the metallic aluminum.

Abstract: A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved.

Abstract: A solar cell of a module type in which thin-film solar cells having a light absorbing layer made of a compound semiconductor are joined in series on a single substrate. The substrate includes a base made of a ferritic stainless steel, an aluminum layer formed on at least one surface of the base, and an insulation layer having a porous structure obtained by anodizing a surface of the aluminum layer. The insulation layer exhibits compressive stress at room temperature.

Abstract: A metal substrate with an insulation layer includes a metal substrate having at least an aluminum base and an insulation layer formed on said aluminum base of said metal substrate. The insulation layer is a porous type anodized film of aluminum. The anodized film includes a barrier layer portion and a porous layer portion, and at least the porous layer portion has compressive strain at room temperature. a magnitude of the strain ranges from 0.005% to 0.25%. The anodized film has a thickness of 3 micrometers to 20 micrometers.

Abstract: A data recording apparatus includes an acquisition unit configured to acquire a first type data and a second type data, and a recording unit configured to record the first type data or the second type data acquired by the acquisition unit in a recording medium. The recording unit refers to a first pointer which indicates a logical position regarding the first type data in the recording medium to determine a position to start recording the first type data based on the logical position indicated by the first pointer. The recording unit refers to a second pointer which indicates a logical position regarding the second type data in the recording medium to determine a position to start recording the second type data based on the logical position indicated by the second pointer.

Abstract: A metal substrate with an insulation layer has a metallic substrate having at least an aluminum base, and an insulation layer formed on the aluminum base of the metallic substrate. The insulation layer is a anodized film of aluminum that has a porous structure having plural pores and a Martens hardness of 1000 N/mm2 to 3500 N/mm2. A ratio of an average pore size of the plural pores to an average wall thickness of the plural pores ranges from 0.2 to 0.5.

Abstract: A semiconductor device is provided with a porous structure layer formed by silicone resin between a substrate and a semiconductor element. Alternatively, a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between the substrate and the semiconductor element. As a further alternative, an adhesion layer formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate, and a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer.