Abstract: A semiconductor device includes a first contact formed so as to be connected to the first impurity-diffused region, but not to the first gate electrode; and a second contact formed so as to be connected commonly to the second gate electrode and the second impurity-diffused region, wherein each of the first contact and the second contact has a profile such that the taper angle changes at an intermediate position in the depth-wise direction from the surface of an insulating film towards a substrate, and the intermediate position where the taper angle changes resides more closer to the substrate in the second contact, than in the first contact.

Abstract: A method of treatment of a freon gas consisting only of carbon and fluorine is provided, wherein the freon gas is exposed to a plasma to decompose and chemically activate the freon gas. The freon gas having been chemically activated is then made into contact with a reactant to form a reaction product.

Abstract: A method of treatment of a fleon gas consisting only of carbon and fluorine is provided, wherein the fleon gas is exposed to a plasma to decompose and chemically activate the fleon gas. The fleon gas having been chemically activated is then made into contact with a reactant to form a reaction product.

Abstract: An electrostatic chuck applicable to, e.g., an epitaxial apparatus or an etching apparatus for electrostatically chucking a semiconductor substrate or wafer is disclosed. The chuck includes a stage for electrostatically retaining the wafer thereon. A plurality of lift pins are elevatable to thrust up the wafer. A plurality of release pins are arranged on the stage for thrusting up the peripheral portion of the wafer. A plurality of drive mechanisms respectively thrust up the release pins stepwise within the allowable elastic deformation range of the wafer. A control device selectively actuates the release pins via the associated drive mechanisms.