Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 ?m in thickness.

Abstract: It is an object of the present invention to provide a highly-functional bonding wire which has good wire-surface nature, loop linearity, stability of loop heights, and stability of a wire bonding shape, and which can cope with semiconductor packaging technologies, such as thinning, achievement of a fine pitch, achievement of a long span, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of <100> orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

Abstract: An object of the present invention is to provide a high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b?0.7.

Abstract: Gold wire for connecting a semiconductor chip basically containing praseodymium in 0.0004 mass % to 0.02 mass % in range and, considering the bonding characteristics, containing beryllium or aluminum or both in limited ranges and, considering the precipitates formed in the gold wire, further containing auxiliary additive elements of calcium, lanthanum, cerium, neodymium, and samarium in limited ranges.

Abstract: In an induction emission air conditioning apparatus installed in a ceiling, it is provided within a casing with a heat exchanger through which a feed air introduced from an outdoor side passes, a fan passing the feed air through the air conditioning heat exchanger, and a heating and cooling unit 1 for blowing a mixed air obtained by inducing and suctioning the air in the room inside by using the feed air passing through the heat exchanger so as to mix with the feed air, into the room inside in a laminar manner, and emitting the heat of the mixed air to the room inside, integrally.

Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 ?m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Abstract: An input device includes a touch panel with which a user performs an input operation of information by touching the touch panel. The input device further includes a vibration generation device for feeding back, to the user, various kinds of sense of touch in accordance with the type of the information through the touch panel. Additionally, the input device includes a vibration control circuit for allowing the vibration generation device to generate various forms of vibrations in accordance with the type of the information. The vibration generation device is a bimorph piezoelectric actuator including a first actuator unit and a second actuator unit stacked on the first actuator unit in which when one of the first and second actuator units expands, the other contracts. Further, each of the first and second actuator units has a multi-layered piezoelectric element layer.

Abstract: A semiconductor device having a chip size package is disclosed. The chip size package comprises a semiconductor chip having at least a bonding pad, at least a terminal of said chip size package and a reroute trace formed between the bonding pad and the terminal on said chip size package. The reroute trace is formed to have a desired resistance.

Abstract: A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.

Abstract: Gold wire for connecting a semiconductor chip basically containing praseodymium in 0.0004 mass % to 0.02 mass % in range and, considering the bonding characteristics, containing beryllium or aluminum or both in limited ranges and, considering the precipitates formed in the gold wire, further containing auxiliary additive elements of calcium, lanthanum, cerium, neodymium, and samarium in limited ranges.

Abstract: The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

Abstract: The present invention related to an input device including: an image display unit (30) that displays information; a touch panel (15) with which a user performs input operation of information by touching a portion corresponding to the position at which the information of the image display unit is displayed; a vibration generation device (71) disposed in the image display unit and feeds back, to the user, various kinds of sense of touch in accordance with the type of the information through the touch panel; and a vibration control circuit (73) for allowing the vibration generation device to generate various forms of vibrations in accordance with the type of the information. The vibration generation device is a bimorph piezoelectric actuator. Each of first and second actuator units has multi-layered piezoelectric elements (63).

Abstract: A shoe press mechanism 100 of a paper machine includes a shoe press 11, and a press roll 13 disposed so as to face the shoe press 11. A wet paper web to be fed is nipped by the press roll 13 and the press shoe 19 together with an annular belt. The shoe press 11 includes a supporter 15, a press shoe 19 that is provided to the supporter 15 so as to move in the direction of approaching or being separated from the press roll 13, a pair of supporting disks 21 that is rotatably supported by the supporter 15, an annular belt 23 that is fixed to the supporting disks 21 and is disposed so as to include the press shoe 19 therein, and adjusting stay bars 25 that are disposed parallel to an axis of the annular belt 23. A mounting position of the adjusting stay bar 25 with respect to the supporter 15 can be adjusted, and the tension of the annular belt 23 is adjusted by adjusting the mounting position.

Abstract: A semiconductor device having a chip size package is disclosed. The chip size package comprises a semiconductor chip having at least a bonding pad, at least a terminal of said chip size package and a reroute trace formed between the bonding pad and the terminal on said chip size package. The reroute trace is formed to have a desired resistance.

Abstract: A semiconductor device having a chip size package is disclosed. The chip size package comprises a semiconductor chip having at least a bonding pad, at least a terminal of said chip size package and a reroute trace formed between the bonding pad and the terminal on said chip size package. The reroute trace is formed to have a desired resistance.