Abstract: In a method of controlling a refrigeration cycle constructed by connecting a compressor, an outdoor-side heat exchanger, an expansion valve, and an indoor-side heat exchanger, the temperature of a coolant ejected from the compressor is detected by a sensor, and the opening rate of the valve is adjusted in accordance with the detected temperature. When the detected temperature exceeds a prescribed upper limit, that opening rate of the valve which is indicated on that occasion is stored in a memory, and then the opening rate of the valve is increased to reduce the temperature of the ejected coolant to a lower level than a prescribed lower limit. After the temperature decreases from the lower limit, the opening rate of the valve is adjusted to a larger level than that level which is previously stored in a memory by a prescribed extent, thereby keeping the temperature of the ejected coolant between the upper and lower limits.

Abstract: A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing solder includes aluminum solder provided on the side of the semiconductor substrate and copper solder provided on the side of the electrode. Since solid phase adhesion can be achieved between aluminum and copper even at temperatures below an eutectic temperature of 548.degree. C., the semiconductor substrate can be soldered to the electrode at the low temperatures.

Abstract: A glass-moulded type semiconductor device comprising semiconductor arrangement composed of at least one semiconductor pellet having at least one P-N junction, edges of which are exposed to peripheral surfaces of the semiconductor pellet, a pair of electrodes secured to opposite ends of the semiconductor arrangement through a brazing material, a first mould glass layer secured to the entire circumferential surface of the semiconductor arrangement and extending to the surfaces of the electrodes for passivating the P-N junction of the semiconductor arrangement, and a second mould glass in the form of at least one layer secured to the surface of said first mould glass layer.

Abstract: The present invention provides a refrigeration or heating system which includes a high pressure gaseous refrigerant bypass which introduces high pressure gaseous refrigerant to the compressor through a hole therein. This reintroduction of high pressure gaseous refrigerant increases the work capacity of the compressor, which is particularly valuable in the heating mode where the ambient temperature is low, and also hastens the pressure rising characteristics of the compressor. A low pressure gaseous refrigerant bypass to the compressor may also be provided for permitting a portion of the compressed refrigerant in the compressor to be discharged, thereby reducing the danger of overheating of the compressor. A further feature of the invention is the introduction of low enthalpy refrigerant into the compressor which will also cool an overheated compressor. Appropriate control means are provided for controlling the flow of refrigerant through the bypasses.

Abstract: An airconditioner consists of heat pump type freezing cycle equipment comprising a rotary compressor having a guide port open to the interior of its cylinder; a refrigerant flow-changing valve; an indoor heat exchanger; a first decompressing device; a gas-liquid separator; a second decompressing device; an outdoor heat exchanger, all communicating with each other in the order mentioned. And an injection passage in the guide port communicates with the gas-liquid separator so that a gas refrigerant is injected from the gas-liquid separator into the cylinder through the guide port.

Abstract: A composite joint system is disclosed in which a composite structure containing carbon fibers embedded in a copper matrix in any configuration, e.g. in one direction, in random directions, in mesh form, spirally or radially is joined to another structure through a brazing material such as solder, Al brazer or Ag brazer. A film of metal such as Ni, Cr, Mo, W, Ta, Ti, Zr, V, an alloy of one or some of such metals, or the combination of some thereof is interposed between the composite structure and the brazing material. The metal film has a good wettability to both the composite structure material and the brazing material.

Abstract: A semiconductor device comprises a semiconductor substrate and at least one supporting electrode soldered to one surface of the semiconductor substrate. The supporting electrode is constituted by a composite body having fibers embedded in a matrix of an electrically conductive metal. The coefficient of the thermal expansion of the fibers is substantially equal to or smaller than that of the semiconductor substrate. The fiber is arrayed in an annular, circular, spiral or the like pattern at least in the surface portion of the composite body on which the composite body is bonded to the substrate.

Abstract: A diode-integrated high speed thyristor formed into one body by using a separation region for preventing interference between a thyristor and a diode.