Abstract: A solid-state imaging device includes a semiconductor substrate having a main surface provided with a plurality of light sensitive regions and an insulating film provided on the main surface of the semiconductor substrate. A plurality of uneven portions are formed on a surface (main surface) on the side opposite to the main surface of the semiconductor substrate in the insulating film and a plurality of height differences of the uneven portions exist in the light sensitive region.

Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 ?m or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

Abstract: In a linear image sensor 1 according to an embodiment of the present invention, a plurality of embedded photodiodes PD(n) of an elongated shape are arrayed. Each of the embedded photodiodes PD(n) comprises a first semiconductor region 10 of a first conductivity type; a second semiconductor region 20 formed on the first semiconductor region 10, having a low concentration of an impurity of a second conductivity type, and having an elongated shape; a third semiconductor region 30 of the first conductivity type formed on the second semiconductor region 20 so as to cover a surface of the second semiconductor region 20; and a fourth semiconductor region 40 of the second conductivity type for extraction of charge from the second semiconductor region 20; the fourth semiconductor region 40 comprises a plurality of fourth semiconductor regions arranged as separated in a longitudinal direction of the second semiconductor region on the second semiconductor region 20.

Abstract: In an image sensor 1 according to an embodiment of the present invention, a plurality of embedded photodiodes PD(m,n) are arrayed. Each of the embedded photodiodes PD(m,n) comprises a first semiconductor region 10 of a first conductivity type; a second semiconductor region 20 formed on the first semiconductor region 10 and having a low concentration of an impurity of a second conductivity type; a third semiconductor region 30 of the first conductivity type formed on the second semiconductor region 20 so as to cover a surface of the second semiconductor region 20; and a fourth semiconductor region 40 of the second conductivity type for extraction of charge from the second semiconductor region 20; the fourth semiconductor region 40 comprises a plurality of fourth semiconductor regions 40 arranged as separated, on the second semiconductor region 20.

Abstract: In a linear image sensor 1 according to an embodiment of the present invention, a plurality of embedded photodiodes PD(n) of an elongated shape are arrayed. Each of the embedded photodiodes PD(n) comprises a first semiconductor region 10 of a first conductivity type; a second semiconductor region 20 formed on the first semiconductor region 10, having a low concentration of an impurity of a second conductivity type, and having an elongated shape; a third semiconductor region 30 of the first conductivity type formed on the second semiconductor region 20 so as to cover a surface of the second semiconductor region 20; and a fourth semiconductor region 40 of the second conductivity type for extraction of charge from the second semiconductor region 20; the fourth semiconductor region 40 comprises a plurality of fourth semiconductor regions arranged as separated in a longitudinal direction of the second semiconductor region on the second semiconductor region 20.

Abstract: A solid-state imaging device 1 according to an embodiment of the present invention, in a solid-state imaging device for which M pixel units P(1) to P(16) for performing photoelectrical conversion are arrayed, includes N holding units H(1) to H(4) (N is smaller than M) that sequentially hold output signals from different pixel units out of the M pixel units P(1) to P(16), and an amplifying section 30 that sequentially amplifies output signals from the N holding units H(1) to H(4).

Abstract: In an image sensor 1 according to an embodiment of the present invention, a plurality of embedded photodiodes PD(m,n) are arrayed. Each of the embedded photodiodes PD(m,n) comprises a first semiconductor region 10 of a first conductivity type; a second semiconductor region 20 formed on the first semiconductor region 10 and having a low concentration of an impurity of a second conductivity type; a third semiconductor region 30 of the first conductivity type formed on the second semiconductor region 20 so as to cover a surface of the second semiconductor region 20; and a fourth semiconductor region 40 of the second conductivity type for extraction of charge from the second semiconductor region 20; the fourth semiconductor region 40 comprises a plurality of fourth semiconductor regions 40 arranged as separated, on the second semiconductor region 20.

Abstract: A numerical control apparatus for controlling a numerical lathe has a superimposing Z-axis control function in which, when a work is machined by the control of movement of a tool holder in the Z2- and X2-axis directions driving movement of a spindle in the Z1-axis direction, the variance of the position of the spindle in the Z1-axis direction as detected by a Z1-axis position detector is added to the value derived from a Z2-axis position detector which detects the position of the tool holder in the Z2-axis direction, and the position of the second tool holder in the Z2-axis direction is controlled using the result of the addition as the feedback value of the Z2-axis position of the second tool holder.

Abstract: A numerical control information generating apparatus generates numerical control information within a short period of time, since it extracts a machining portion from the input blank shape and the input machining shape and automatically divides the machining portion into first and second machining portions at the right point.

Abstract: .alpha.-D-Galacturonide derivatives, salts thereof, and plant disease control agents containing the derivative or the salt as an active component. The derivatives are represented by the formula ##STR1## wherein R.sup.1 is alkyl having 1 to 8 carbon atoms, alkenyl having 2 to 8 carbon atoms, cycloalkyl having 3 to 8 carbon atoms, aryl or a 5-membered or 6-membered unsaturated heterocyclic ring residue, R.sup.2 is a hydrogen atom or methyl, A is an oxygen atom or sulfur atom, and the hydroxyl attached to the carbon atom at the 4-position of the galacturonide skeleton and the hydrogen atom attached to the carbon atom at the 5-position may be eliminated to form a double bond between the carbon atoms at the 4- and 5-positions.The compounds represented by formula (I) are prepared by the processes represented by reaction schemes 1 to 3 as described below. ##STR2## wherein R.sup.3 is a protective group for hydroxyl group.