Abstract: A powder coating apparatus which can form a thin film in which freely selected elements are combined without an impurity being mixed and satisfies that a composition of the obtained thin film is uniform. The powder coating apparatus according to the present invention is a powder coating apparatus including a barrel, exhaust device for evacuating an inside of the barrel, and a sputtering device installed inside the barrel, the barrel having a main axis C directed in a horizontal direction and rotating around the main axis, the sputtering device forming a coating film on a surface of powder put in the barrel, in which the sputtering device has one fixing portion for one target to mount two or more targets, and respective targets are disposed in parallel to each other at the same level position with respect to a direction of the main axis when the target is mounted on the fixing portion.

Abstract: A powder coating apparatus which can form a thin film in which freely selected elements are combined without an impurity being mixed and satisfies that a composition of the obtained thin film is uniform. The powder coating apparatus according to the present invention is a powder coating apparatus including a barrel, exhaust device for evacuating an inside of the barrel, and a sputtering device installed inside the barrel, the barrel having a main axis C directed in a horizontal direction and rotating around the main axis, the sputtering device forming a coating film on a surface of powder put in the barrel, in which the sputtering device has one fixing portion for one target to mount two or more targets, and respective targets are disposed in parallel to each other at the same level position with respect to a direction of the main axis when the target is mounted on the fixing portion.

Abstract: A particle-dispersed complex which can serve as a very active electrochemical catalyst used as the sensor electrode of a solid electrolyte sensor such as an oxygen sensor and an exhaust gas sensor that are sensitive even at low temperature, or as the electrode or the like of an electrochemical device or the like such as an electrolysis or a battery or the like by dispersing without aggregating ruthenium system fine particles having a very small particle size into a carbon matrix phase to keep ruthenium system fine particles in a high catalyst active state. The particle-dispersed complex is characterized by comprising fine particles that have a particles size of 5-100 nm, contain ruthenium element as a constituent element, and are dispersed in a matrix mainly containing carbon, and by having conductivity.

Abstract: A particle-dispersed complex which can serve as a very active electrochemical catalyst used as the sensor electrode of a solid electrolyte sensor such as an oxygen sensor and an exhaust gas sensor that are sensitive even at low temperature, or as the electrode or the like of an electrochemical device or the like such as an electrolysis or a battery or the like by dispersing without aggregating ruthenium system fine particles having a very small particle size into a carbon matrix phase to keep ruthenium system fine particles in a high catalyst active state. The particle-dispersed complex is characterized by comprising fine particles that have a particles size of 5-100 nm, contain ruthenium element as a constituent element, and are dispersed in a matrix mainly containing carbon, and by having conductivity.

Abstract: The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.

Abstract: The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.

Abstract: There is disclosed an optical data storage medium in which the weather resistance of the semitransparent reflective film is improved and the adhesive property between the semitransparent reflective film and a substrate is enhanced, and which has a higher reliability. In an optical data storage medium (6), on the side on which a reproduction light (8) is incident, a first information layer (9) is located while on the side opposite to the side on which the reproduction light (8) is incident, a second information layer (10) is located. A semitransparent reflective film (3) of first information layer (9) is AgPdCu alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Cu or AgPdTi alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Ti. At the wavelength 650 nm, the optimum film thickness of AgPdCu alloy thin film is 5 to 18 nm and the optimum film thickness of AgPdTi alloy thin film is 10 to 25 nm.