Patents by Inventor Keiichiro Tanabe

Keiichiro Tanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5717214
    Abstract: The present invention provides a X-ray beam position monitor, including a diamond plate placed so that the X-ray beam pass through diamond plate, and a plurality of electrode pairs placed on both sides of the diamond plate. The monitor makes it possible to monitor position of high power X-ray beam with high accuracy and at high speed. In addition, the monitor can be stably operated and reduce costs for manufacturing itself.
    Type: Grant
    Filed: April 5, 1996
    Date of Patent: February 10, 1998
    Assignee: Rikagaku Kenkyusho
    Inventors: Hideo Kitamura, Yoshiyuki Yamamoto, Keiichiro Tanabe, Hisaharu Sakae
  • Patent number: 5657365
    Abstract: An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target of generating X-ray by irradiation of electron. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.
    Type: Grant
    Filed: August 14, 1995
    Date of Patent: August 12, 1997
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiyuki Yamamoto, Keiichiro Tanabe, Naoji Fujimori, Nobuhiro Ota
  • Patent number: 5624719
    Abstract: A method for synthesizing diamond by chemical vapor deposition (CVD) is described. The method produces diamond of high purity and high crystallizability having various uses at low cost and at high speed. In a first method, a mixture of oxygen gas and a carbon-containing compound gas, and optionally an inert gas, is introduced into a reaction vessel. In a second method, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas, sulfur dioxide, an aforementioned mixture of oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into the reaction vessel. A plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.
    Type: Grant
    Filed: July 22, 1994
    Date of Patent: April 29, 1997
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Takahiro Imai, Naoji Fujimori
  • Patent number: 5587013
    Abstract: A flat free-standing diamond film is produced by growing alternately at least one pair of a potential-concave diamond layer and a potential-convex diamond layer on a non-diamond substrate and eliminating the substrate. The potential-concave films are made by a CVD method under a condition (b), which is characterized by of a substrate temperature of 880.degree. C. to 950.degree. C. and a hydrocarbon ratio of 2.5 vol % to 3.5 vol %. The potential-convex films are made by a CVD method under the condition (a) which is charcterized by of a substrate temperature of 800.degree. C. to 850.degree. C. and a hydrocarbon ratio of 0.5 vol % to 1.5 vol %. The condition (a) can make a potential-convex film of a good crystal quality in spite of a slow deposition speed. It is preferable to employ an assembly of thinner potential-convex films and thicker potential-concave films to curtail the total time of synthesis.
    Type: Grant
    Filed: January 27, 1995
    Date of Patent: December 24, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akihiko Ikegaya, Keiichiro Tanabe, Naoji Fujimori
  • Patent number: 5584045
    Abstract: Polycrystalline diamond has non-uniform impurity concentration along the direction of thickness. The diamond near the rake surface has a lower impurity concentration. The diamond near the fixation surface has a higher impurity concentration. The diamond with the higher impurity concentration near the fixation surface alleviates strong stress or absorbs external shock. Owing to the higher impurity concentration of diamond near the fixation surface, the diamond tool excels in chip resistance or toughness. The diamond with a lower impurity concentration near the rake surface heightens abrasion resistance, adhesion resistance and strength.
    Type: Grant
    Filed: November 6, 1995
    Date of Patent: December 10, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Naoji Fujimori
  • Patent number: 5571236
    Abstract: A wire drawing die comprises first and second polycrystalline diamond layers made of gaseous phase synthesized diamond. The finest diamond particles of the diamond layers are made into the wire contact portion of the die.
    Type: Grant
    Filed: August 26, 1993
    Date of Patent: November 5, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Toshiya Takahashi, Akihiko Ikegaya, Keiichiro Tanabe, Noaji Fujimori
  • Patent number: 5567522
    Abstract: A diamond cutting tool has a rake face (5) of a cutting edge member (2) consisting essentially of a (111) plane of diamond. The cutting edge member (2) of diamond is vapor-deposited by CVD or the like on an independently prepared base material. In this vapor deposition, the diamond is deposited while controlling and periodically varying the carbon to hydrogen ratio of the supplied raw material gas, in such a manner that a (111) crystal plane is oriented with a prescribed fluctuation or non-uniformity, but is substantially parallel to the base material surface. The as-formed diamond material is separated from the base material and cut into a desired shape, and then bonded as a cutting edge member (2) to a tool base (1) through a metallization layer (4) and a brazing layer (3), in such an orientation that the (111) plane defines the rake face (5).
    Type: Grant
    Filed: October 5, 1994
    Date of Patent: October 22, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Akihiko Ikegaya, Toshiya Takahashi, Naoji Fujimori
  • Patent number: 5556464
    Abstract: The present invention relates to a diamond vibration plate for a speaker having high sound velocity or E/.rho. and which is superior in high-pitched tone performance. Conventional diamond vibration plates which are made overall from crystalline diamond were apt to split or break at a flange due to the high rigidity. According to the present invention periphery of the flange is circularly cut by laser beams to eliminate rugged circumference. The laser treatment also converts the crystalline diamond of the flange into non-diamond carbon. The resulting vibration plate with a central spherical part of crystalline diamond and a periphery of a flange of non-diamond carbon excels both in high frequency property and mechanical strength.
    Type: Grant
    Filed: February 10, 1995
    Date of Patent: September 17, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Naoji Fujimori
  • Patent number: 5516027
    Abstract: A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant.
    Type: Grant
    Filed: September 20, 1994
    Date of Patent: May 14, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Toshiya Takahashi, Akihiko Ikegaya, Naoji Fujimori
  • Patent number: 5435815
    Abstract: A diamond cutting tool has a tool substrate and a cutting edge member. The cutting edge member is formed of a material having a three-layer structure or a diamond composite material. When the material having a three-layer structure is employed, the cutting edge member is formed by a vapor-deposited diamond layer defining a rake face, a layer of a composite material of vapor-deposited diamond and a metal or ceramics, and a layer of the metal or ceramics. The metal is prepared from Mo, W, Cr, V, Nb, Ta, Co, Ni or Fe, while the ceramics is prepared from cBN, SiC, Si.sub.3 N.sub.4, WC, TiC, TaC, NbC, Cr.sub.3 C.sub.2, Mo.sub.2 C, VC, TiN or BN. The cutting edge member is brazed to the tool substrate through the metal or ceramics layer. When the diamond composite material is employed, on the other hand, the cutting edge member is formed of a composite material of particles or fibers of AlN, cBN or SiC and vapor-deposited diamond. The diamond cutting tool is excellent in heat resistance and durability.
    Type: Grant
    Filed: June 29, 1993
    Date of Patent: July 25, 1995
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akihiko Ikegaya, Keiichiro Tanabe, Toshiya Takahashi, Naoji Fujimori
  • Patent number: 5432004
    Abstract: The present invention relates to a diamond vibration plate for a speaker having high sound velocity or E/.rho. and which is superior in high-pitched tone performance. Conventional, diamond vibration plates which are made overall from crystalline diamond were apt to split or break at a flange due to the high rigidity. According to the present invention periphery of the flange is circularly cut by laser beams to eliminate rugged circumference. The laser treatment also converts the crystalline diamond of the flange into non-diamond carbon. The resulting vibration plate with a central spherical part of crystalline diamond and a periphery of a flange of non-diamond carbon excels both in high frequency property and mechanical strength.
    Type: Grant
    Filed: July 15, 1993
    Date of Patent: July 11, 1995
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Naoji Fujimori
  • Patent number: 5380516
    Abstract: The present invention relates to a method for synthesizing diamond by chemical vapor deposition (CVD) process, and specifically a chemical deposition process which allows production of diamond of high purity and high crystallizability having various uses at low cost and at high speed. In the first method for the present invention, a mixture of oxygen gas and a carbon-containing compound gas and optionally an inert gas is introduced into a reaction vessel and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a substrate placed in the vessel.
    Type: Grant
    Filed: August 21, 1992
    Date of Patent: January 10, 1995
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Takahiro Imai, Naoji Fujimori
  • Patent number: 5370299
    Abstract: A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant.
    Type: Grant
    Filed: April 2, 1993
    Date of Patent: December 6, 1994
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Toshiya Takahashi, Akihiko Ikegaya, Naoji Fujimori
  • Patent number: 5270028
    Abstract: A diamond having improved properties is produced by a method which comprises introducing a mixture of hydrogen (A), an inert gas (B) and a carbon-containing compound (C) in molar ratios which satisfy the following equations: ##EQU1## generating a low temperature plasma with one of direct current and an alternating current electromagnetic field under pressure of 5 to 760 Torr to form the diamond on a substrate, wherein there is no substantial differnce between a place where the plasma is generated and a place where the diamond is formed on the substrate.
    Type: Grant
    Filed: May 18, 1992
    Date of Patent: December 14, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Takahiro Imai, Naoji Fujimori
  • Patent number: 5173089
    Abstract: The invention relates to a chemical vapor phase deposition method for producing a polycrystalline diamond tool comprising the steps of supplying material gas including a carbon-containing gas and hydrogen gas into a vacuum chamber, exciting the material gas into a state including plasma or radicals, introducing the material gas to a heated substrate, first depositing of diamond on the substrate with the material gas having a first density of carbon, a first density of oxygen and a first density of nitrogen, second depositing of diamond on the first deposited diamond with the material gas having a density of carbon higher than the first density of carbon, a density of oxygen lower than the first density of oxygen or a density of nitrogen higher than the first density of nitrogen till the diamond becomes more than 40 .mu.
    Type: Grant
    Filed: March 20, 1992
    Date of Patent: December 22, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Naoji Fujimori
  • Patent number: 5139372
    Abstract: Polycrystalline diamond has non-uniform quality along the direction of thickness. The diamond near the rake surface is of better quality. The diamond near the fixation surface is of worse quality. The worse diamond near the fixation surface alleviates a strong stress or absorbs an external shock. Owing to the worse diamond near the fixation surface, the diamond tool excels in chip resistance or toughness. The better diamond near the rake surface heightens abrasion resistance, adhesion resistance and strength.
    Type: Grant
    Filed: April 1, 1991
    Date of Patent: August 18, 1992
    Assignee: Sumotomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Naoji Fujimori
  • Patent number: 5133783
    Abstract: An annular thin plate blade having a cutting edge at its inner periphery and a method of producing the thin plate blade in which an annular member made of polycrystalline diamond formed by vapor phase synthesis is provided at the inner periphery of the thin plate blade and the thin plate blade has a thickness of 20 to 300 .mu.m.
    Type: Grant
    Filed: October 26, 1990
    Date of Patent: July 28, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Naoji Fujimori
  • Patent number: 5075096
    Abstract: Disclosed is a method of vapor-phase synthesizing diamond comprising creating a reduction atmosphere by burning a combustible gas in a combustion-supporting gas, controlling the humidity by adding steam or liquid water drops to the combustion flame, and inserting a basic material into the synthesis flame. This method produces diamonds of the desired reproducibility and crystallinity, with an industrially-acceptable rate of film growth, while simultaneously ensuring the process stability necessary for long-duration synthesis.
    Type: Grant
    Filed: January 18, 1990
    Date of Patent: December 24, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiichiro Tanabe, Naoji Fujimori