Abstract: A liquid discharge head includes a nozzle layer having a nozzle through which a liquid is discharged from a second side toward a first side, a liquid chamber substrate, and a drive circuit. The nozzle layer includes a vibration layer, a piezoelectric actuator adjacent to the nozzle and over the first side, a circuit connection over the first side, a first protective layer around the circuit connection, a second protective layer over the piezoelectric actuator, a first water-resistant film over the first protective layer, and a second water-resistant film over the second protective layer. The second protective layer is separated from the first protective layer. The first protective layer defines an opening above the circuit connection. The liquid chamber substrate has a liquid chamber communicating with the nozzle. The drive circuit is disposed over the second side and connected to the circuit connection to drive the piezoelectric actuator.

Abstract: A vehicle lamp emits red light from a second light emitting area by lighting a tail/accessory lamp while emitting red light from a first light emitting area during a lighting of a tail lamp. Meanwhile, the vehicle lamp lights out the tail/accessory lamp while emitting orange light from the second light emitting area during a lighting (flickering) of a turn lamp.

Abstract: A vehicle lamp emits red light from a second light emitting area by lighting a tail/accessory lamp while emitting red light from a first light emitting area during a lighting of a tail lamp. Meanwhile, the vehicle lamp lights out the tail/accessory lamp while emitting orange light from the second light emitting area during a lighting (flickering) of a turn lamp.

Abstract: A lock device is arranged in a vehicle including an inlet used for charging. The vehicle is configured to perform a predetermined control operation in accordance with a control request signal transmitted through wireless communication from an electronic key when a normal operation is performed on a control switch of the electronic key. The lock device includes a lock mechanism configured to switch a locking subject related with the inlet between a lock state and an unlock state. A controller controls the lock mechanism to switch the locking subject between a lock state and an unlock state when detecting a special operation performed on the control switch.

Abstract: A lock device is arranged in a vehicle including an inlet and an operation switch. The vehicle is configured to perform a predetermined control operation corresponding to the operation switch when the condition that verification of an authentic electronic key through wireless communication has been accomplished and the condition that a normal operation of the operation switch has been performed are both satisfied. The lock device includes a lock mechanism that locks a locking subject related with the inlet. A controller controls the lock mechanism to switch the locking subject between a lock state and an unlock state when the condition that the verification of the authentic electronic key has been accomplished and the condition that a special operation of the operation switch has been performed are both satisfied.

Abstract: A lock device is arranged in a vehicle including an inlet used for charging. The vehicle is configured to perform a predetermined control operation in accordance with a control request signal transmitted through wireless communication from an electronic key when a normal operation is performed on a control switch of the electronic key. The lock device includes a lock mechanism configured to switch a locking subject related with the inlet between a lock state and an unlock state. A controller controls the lock mechanism to switch the locking subject between a lock state and an unlock state when detecting a special operation performed on the control switch.

Abstract: An extruded member of Al—M13 Si aluminum alloy specially composed of Mg, Si, Fe, Cu, Zn, Ti, etc. which has the equiaxed re-crystallized grain structure in which intergranular precipitates 1 ?m or larger are separate from one another at large average intervals and there are many cube orientations over the entire thickness region thereof so that it excels in both flexural crushing performance and corrosion resistance. The extruded member is suitable for use as automotive body reinforcement members which need outstanding lateral crushing performance under severe collision conditions as well as good corrosion resistance.

Abstract: An extruded member of Al—Mg—Si aluminum alloy specially composed of Mg, Si, Fe, Cu, Zn, Ti, etc. which has the equiaxed re-crystallized grain structure in which intergranular precipitates 1 ?m or lager are separate from one another at large average intervals and there are many cube orientations over the entire thickness region thereof so that it excels in both flexural crushing performance and corrosion resistance. The extruded member is suitable for use as automotive body reinforcement members which need outstanding lateral crushing performance under severe collision conditions as well as good corrosion resistance.

Abstract: To provide a yttria sintered body having an excellent corrosion resistance to halogen-based corrosive gases and plasma and an excellent thermal shock resistance, and adapted for use as a component member in manufacturing apparatuses for semiconductor and liquid crystal devices, particularly in a plasma process apparatus. A yttria sintered body including tungsten of an average particle size of 3 ?m or less dispersed in the yttria so that a ratio of the tungsten relative to the yttria is ranging from 1 to 50% in terms of weight, and having an open pore rate of 0.2% or less and a thermal shock resistance by water submersion method of 200° C. or larger.

Abstract: To reduce a load inflicted on a network by peer-to-peer communication between terminals, the present invention provides a network system having a communication destination machine and a communication source machine, in which: the communication destination machine includes a unit which registers its own location information in a peer-to-peer network; and the communication source machine includes: a unit which searches the peer-to-peer network for the location information of the communication destination machine and obtains the location information; and a unit which uses the obtained information to establish peer-to-peer communication. The location information contains communication path information which enables the communication source machine to communicate with a desired machine beyond a path controller, and a parameter necessary for communication. The communication source machine may include a unit which accumulates location information or similar data of multiple communication destination machines.

Abstract: To provide an inexpensive gas dispersion plate having a high corrosion resistance to halogen-based corrosive gasses and a plasma thereof, and capable of preventing particle generation from the gas hole, thereby contributing to an improvement in the production yield of the semiconductor devices. The gas dispersion plate includes one or plural gas holes in a base material formed by a Y2O3 ceramic material having a relative density of 96% or more, in which an edge part of the gas hole is formed by a sand blasting process into a rounded shape with a radius of curvature of 0.2 mm or more.

Abstract: To provide a yttria sintered body having an excellent corrosion resistance to halogen-based corrosive gases and plasma and an excellent thermal shock resistance, and adapted for use as a component member in manufacturing apparatuses for semiconductor and liquid crystal devices, particularly in a plasma process apparatus. A yttria sintered body including tungsten of an average particle size of 3 ?m or less dispersed in the yttria so that a ratio of the tungsten relative to the yttria is ranging from 1 to 50% in terms of weight, and having an open pore rate of 0.2% or less and a thermal shock resistance by water submersion method of 200° C. or larger.

Abstract: A gas diffusion plate has an alumina or an aluminum base material provided with one or more through holes and an yttria body shrink-fitted to one of the through holes and provided with one or more gas discharge holes.

Abstract: The present invention provides a plasma resistant member having a reinforced mechanical strength and being sufficiently durable to exposure to a low pressure high density plasma. At least the surface of the alumina based material is formed of an oxide or composite oxide layer of a group IIIA element via an intermediate layer. It is preferable in the construction of the plasma resistant member that the intermediate layer comprises 10 to 80% by weight of the oxide or composite oxide of the group IIIA element in the periodic table and 90 to 20% by weight of alumina. The intermediate layer may also comprise a course ceramic with a porosity of 0.2 to 5%. It is also desirable that at least one of the conditions such as a difference in the thermal shrinkage ratio at 1600 to 1900° C. of 3% or less is provided.

Abstract: A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 ?m from surface in a plasma-resistant member.

Abstract: A plasma-resistant member used in a reaction chamber of a plasma treating apparatus is formed of a dense alumina sintered product having an average grain size of 18-45 &mgr;m, a surface roughness Ra of 0.8-3.0 &mgr;m and a bulk density of 3.90 g/cm3 or over.

Abstract: The present invention provides a plasma resistant member having a reinforced mechanical strength and being sufficiently durable to exposure to a low pressure high density plasma. At least the surface of the alumina based material is formed of an oxide or composite oxide layer of a group IIIA element via an intermediate layer. It is preferable in the construction of the plasma resistant member that the intermediate layer comprises 10 to 80% by weight of the oxide or composite oxide of the group IIIA element in the periodic table and 90 to 20% by weight of alumina. The intermediate layer may also comprise a course ceramic with a porosity of 0.2 to 5%. It is also desirable that at least one of the conditions such as a difference in the thermal shrinkage ratio at 1600 to 1900° C. of 3% or less is provided.

Abstract: A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 &mgr;m from surface in a plasma-resistant member.

Abstract: The invention is a method of producing a ceramics material comprising the steps of: preparing a raw powder in which alumina particles having an average particle diameter of 0.1-1.0 &mgr;are doped with at least magnesia of 0.01-1 weight % and a solution containing yttrium of 0.1-15 weight % in yttria; molding said raw powder and calcining a molding thus created; and heating the calcined molding in an atmosphere containing a hydrogen gas to create YAG which is leached to the surface to deposit YAG on the surface and sintering the molding.

Abstract: A crystalline inorganic fiber or molded body thereof is thermally treated in gas atmosphere containing chlorine. The crystalline inorganic fiber or molded body thereof contains small impurities such as Fe, Cu and Ni. For example, Fe is 15 ppm or less, Cu is 1 ppm or less, and Ni is 0.5 ppm or less.