Abstract: In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

Abstract: Disclosed is a production method of a lithium tetrafluoroborate solution for use as a lithium battery electrolytic solution, including: a reaction step of forming lithium tetrafluoroborate by reaction of lithium fluoride and boron trifluoride in a chain carbonate ester solvent and thereby obtaining a reaction solution of the lithium tetrafluoroborate dissolved in the chain carbonate ester solvent; a water removal step of adding a water removing agent to the reaction solution; an acidic impurity removal step of removing an acidic impurity component from the reaction solution by concentrating the reaction solution after the water removal step; and a dilution step of diluting the concentrated solution after the acidic impurity removal step. It is possible by this method to obtain the lithium tetrafluoroborate solution whose acidic impurity content and water content are reduced to be 50 mass ppm or lower and 15 mass ppm or lower, respectively.

Abstract: Calibration method of cameras is performed by using images generated by imaging a peripheral area of a vehicle by the cameras, wherein the peripheral area of a vehicle includes a calibration index pre-set on a road surface where the vehicle is positioned. The cameras are mounted on the vehicle, and the calibration index includes intersections formed by at least two first parallel straight lines and two second parallel straight lines having different inclination from the two first parallel straight lines. The camera calibration method includes steps of generating a bird's-eye-view video by viewpoint-converting each of the images based on a first camera parameter that is stored in advance; recognizing the intersections from the generated bird's-eye-view video; and calculating a second camera parameter, via which a non-deviated bird's-eye-view video can be generated, based on the recognized intersections and information on positions and poses of the cameras.

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract: An information recording apparatus has a stop mode in which only recording means comprised of a rotatable drum on which a recording head is mounted and recording medium driving means comprised of a capstan/pinch roller are stopped, which stop mode can be changed from a record temporary stop mode. During the stop mode of the recording means and the recording medium driving means, a video signal photo-taken by a camera of the information recording apparatus can be outputted externally, and, change to the stop mode is made effective by a combination of user's selection and/or presence/absence of an external connection device.

Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract: Disclosed is a method for forming lithium hexafluorophosphate by reacting together phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent and then making the reaction product formed in the solvent react with hydrogen fluoride. This method is characterized by that a lithium hexafluorophosphate concentrated liquid is obtained by conducting a filtration after making the reaction product formed in the solvent react with hydrogen fluoride and then subjecting the filtrate to a concentration by degassing. By this method, it is possible to easily produce a high-purity, lithium hexafluorophosphate concentrated liquid at a low cost.

Abstract: An information recording apparatus has a stop mode in which only recording means comprised of a rotatable drum on which a recording head is mounted and recording medium driving means comprised of a capstan/pinch roller are stopped, which stop mode can be changed from a record temporary stop mode. During the stop mode of the recording means and the recording medium driving means, a video signal photo-taken by a camera of the information recording apparatus can be outputted externally, and, change to the stop mode is made effective by a combination of user's selection and/or presence/absence of an external connection device.

Abstract: To provide an improved solderability for mounting an electronic component onto a circuit board, a package of an electronic component (1) is formed by bonding together a base (3) made of glass and a lid (2). Outer electrodes (8) and (18) are formed on a bottom surface of the base (3), and the outer electrodes (8) and (18) are respectively connected to through electrodes (7) and (17). The outer electrodes (8) and (18) each have a laminated structure of three CrAu layers, that is, from a Cr layer (first layer) to an Au layer (sixth layer). When the outer electrodes (8) and (18) are soldered onto a circuit board, the Au layers as the second, fourth, and sixth layers are dissolved into solder, whereas the Cr layers as the third and fifth layers, which hardly form an intermetallic compound with solder, are separated to remain in solder.

Abstract: To alleviate the strictness degree required for a relative positional relationship between a calibration index and a vehicle in an image calibration method and an image calibration device. The image calibration device includes a calibration index 20, four cameras 10, a distortion correction processing unit 30, a viewpoint transformation processing unit 40, and a calibration processing unit 50. The calibration index 20 includes two mutually parallel lines and a distance between which is known and one line orthogonal to the two lines. The cameras 10 take peripheral area images S1 to S4 of peripheral areas R1 to R4 including the calibration index 20. The distortion correction processing unit 30 corrects the peripheral area images S1 to S4 by using internal parameters M to obtain distortion-corrected images P1 to P4.

Abstract: An electronic device is provided which includes a base, a through-electrode that passes through the base and from which an insulating material on an end face thereof is removed by polishing, a circuit pattern that is formed on an end face of the through-electrode, an electronic component that is disposed via an internal wiring formed on the circuit pattern, an electrode pattern that is formed on the surface of the base opposite to the surface on which the electronic component is disposed and that is connected to the other end face of the through-electrode, an external electrode that is formed on the electrode pattern, and a cap that is bonded to the base so as to protect the electronic component on the base.

Abstract: Disclosed is a method for producing a lithium ion battery electrolyte solution containing lithium hexafluorophosphate as an electrolyte and a lithium ion battery using the electrolyte solution. The electrolyte solution is produced by reacting lithium chloride with phosphorus trichloride and chlorine in a non-aqueous organic solvent, reacting a reaction product generated in the solvent with hydrogen fluoride, reacting unreacted remaining hydrogen fluoride with lithium chloride, and then, separating the resulting reaction solution by filtration into a filtrate and a solid residue. The filtrate is obtained as the lithium ion battery electrolyte solution. The solid product is further reacted with phosphorous trichloride and chlorine in a non-aqueous organic solvent. The reaction product generated in the solvent is reacted with hydrogen fluoride, followed by reacting unreacted remaining hydrogen fluoride with lithium chloride.

Abstract: An heat pump drying machine has a normal dry mode (e.g., compression ratio is equal to or greater than 3) for operating a compressor at a predetermined dry operation frequency and an energy saving dry mode (e.g., compression ratio is equal to or greater than 2.3 and is less than 3) for operating the compressor at an energy saving operation frequency that is lower than the dry operation frequency. A control device is provided to control an operation frequency of the compressor 5so that the two dry operation modes are switched to each other. The control device can execute the control for increasing the operation frequency of the compressor to the dry operation frequency during the operation of the energy saving dry mode.

Abstract: A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from ?1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 ??·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

Abstract: To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

Abstract: In a structure where an electronic component is mounted on a glass base material, an external electrode is provided on an opposite side to the component mounted on the base, and a through electrode and the base are welded to each other at a temperature equal to or higher than a glass softening point, electrical conduction is ensured between the electronic component and the external electrode. An electronic device includes a base, a through electrode which pass through the base and has a metal film formed on both end surfaces after an insulating material on the surface is removed by polishing, an electronic component which is provided on one surface of the through electrode through a connection portion, an external electrode which is provided on an opposite side to a side of the base on which the electronic component is provided, and a cap which protects the electronic component on the base.

Abstract: In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

Abstract: An electronic-parts package includes a base member, a conductive member extending through the base member, the conductive member having the insulating substance on the surface removed by polishing, electronic parts disposed on one surface of the conductive member through a connection portion, an exterior electrode disposed through a metal film on the opposite surface of the surface of the base member on which the electronic parts is disposed, and a cap member that protects the electronic parts on the base member.

Abstract: Disclosed is a container that is capable of maintaining articles requiring thermal management at a prescribed temperature without being influenced by the outside air temperature, and that is capable of storing and transporting the articles. The constant-temperature storage container is equipped with a heat-insulating box, and two or more types of cold-storing materials or heat-storing materials disposed therein; has a latent-heat first cold-storing or heat-storing material (a) disposed in a solid state adjacent to an article being kept cool or warm, and a latent-heat second cold-storing or heat-storing material (b) disposed in a molten state on the exterior of the first cold-storing or heat-storing material (a); and the solidifying and melting temperature of the first cold-storing or heat-storing material (a) exceeds 0° C. The constant-temperature storage container is capable of maintaining the article being kept cool or warm in an arbitrary temperature range exceeding 0° C. for long periods of time.