Abstract: The light reflecting plate has a substrate made of metal plate, a binder layer made of organic resin or an inorganic material, which is formed on the substrate, a reflective layer formed of a plated layer of silver or silver alloy containing silver as a main component, which is formed on the binder layer, and a protective layer formed on the reflective layer.

Abstract: The light reflecting plate has a substrate made of metal plate, a binder layer made of organic resin or an inorganic material, which is formed on the substrate, a reflective layer formed of a plated layer of silver or silver alloy containing silver as a main component, which is formed on the binder layer, and a protective layer formed on the reflective layer.

Abstract: A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

Abstract: A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

Abstract: A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.

Abstract: A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.

Abstract: A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

Abstract: A battery container having an inner surface provided with a nickel-phosphorous alloy layer, optionally provided with a nickel-cobalt alloy layer as the lower layer thereof. The outer surface of the battery container is preferably provided with a nickel-cobalt alloy layer. Batteries made using the battery containers of the present invention have excellent performance.

Abstract: A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

Abstract: A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

Abstract: A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

Abstract: A semiconductor laser includes an n-type semiconductor substrate, an n-type clad layer, an active layer, a p-type first clad layer, a current blocking layer, a p-type second clad layer and a p-type contact layer stacked in this order form the bottom. A p-side ohmic electrode is formed on the p-type contact layer and an n-side ohmic electrode is formed on a back surface of the n-type semiconductor substrate. A stripe is formed in the current blocking layer so as to extend in the optical oscillator direction. In a center portion of the p-type contact layer, a slit is formed so as to extend in the optical oscillator direction and intersect with the stripe with right angles.

Abstract: A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a conductive film, which absorbs laser light, from attaching to the cleavage plane. During the plasma cleaning, a first process gas containing argon gas and nitrogen gas is introduced into a vacuumed ECR sputtering apparatus. After the cleavage plane is exposed to the first process gas in the plasma state for a certain time period without application of a voltage, a second process gas containing argon gas and oxygen gas is introduced, and the cleavage plane is exposed to the second process gas in the plasma state while a voltage is applied to the silicon target.

Abstract: A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.

Abstract: The objective of the present invention is to produce a surface treated steel sheet for a battery container of which electric contact to the positive electrode active material is improved, a method of surface treatment for a battery container, a battery container and a battery, wherein the surface treated steel sheet has a graphite dispersed nickel plating layer or a graphite dispersed nickel-alloy plating layer formed on the one side to be the inner surface of a battery container, in which nickel-cobalt alloy, nickel-cobalt-iron alloy, nickel-manganese alloy, nickel-phosphorus alloy, nickel-bismuth alloy or the like is preferable as an alloy plating layer, the battery container is manufactured from these surface treated steel sheets by DI forming or DTR forming, and the battery uses this battery container.

Abstract: A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

Abstract: The object of present invention is to provide a battery container, of which the inner surface is provided with a surface-treated layer having low internal resistance and the outer surface is provided with a surface-treated layer having high quality and excellent continuous formability. Another object is to provide a surface-treated steel sheet suitably used for manufacturing the battery container.

Abstract: A plated steel sheet and a connection terminal material using the plated steel sheet have low contact resistance and excellent corrosion resistance. The coated film, which has excellent adhesion, is formed by coating a stainless steel base sheet which is coated with a nickel-tin alloy with a solution/suspension of carbon black or graphite, carboxymethyl cellulose, and a water-borne organic resin which is acrylic resin, polyester resin, urethane resin, or phenol resin.

Abstract: A method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction: forming a plurality of multi-element bars by cleaving the semiconductor multi-layer structure along a second direction; placing at least one of the plurality of multi-element bars on a support stage; and cleaving the at least one of the plurality of multi-element bars along the plurality of grooves by moving a pressure member in a longitudinal direction of the at least one of the plurality of multi-element bars while a constant load is applied by the pressure member to a second surface of the at least one of the plurality of multi-element bars, the second surface being opposite a third surface corresponding to the first surface of the at least one of the plurality of multi-element bars.

Abstract: An inexpensive and corrosion resistant metal-made gas separator includes a base formed by joining formed stainless steel base sheets face to face. The base carries on each of opposite surfaces thereof a first coating layer formed by plating with tin. The base is also coated with a second coating layer of a thermal expansion graphite. When incorporated into a fuel cell, the separator contacts gas diffusion electrodes that are formed from a carbon material similar to the carbon material of the second coating layer, so that the contact resistance is reduced. The first coating layer is formed after a passive state coating is removed from the stainless steel surface, so that an increase in the internal resistance of the separator caused by the passive state coating is substantially prevented.