Patents by Inventor Keiko Emi
Keiko Emi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8352889Abstract: A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.Type: GrantFiled: December 13, 2011Date of Patent: January 8, 2013Assignee: NuFlare Technology, Inc.Inventors: Keiko Emi, Junichi Suzuki, Takayuki Abe, Tomohiro Iijima, Jun Yashima
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Publication number: 20120108063Abstract: A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.Type: ApplicationFiled: December 13, 2011Publication date: May 3, 2012Applicant: NuFlare Technology, Inc.Inventors: Keiko EMI, Junichi SUZUKI, Takayuki ABE, Tomohiro IIJIMA, Jun YASHIMA
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Patent number: 8103980Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position onType: GrantFiled: September 24, 2009Date of Patent: January 24, 2012Assignee: NuFlare Technology, Inc.Inventors: Keiko Emi, Junichi Suzuki, Takayuki Abe, Tomohiro Iljima, Jun Yashima
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Patent number: 7740991Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position onType: GrantFiled: July 28, 2006Date of Patent: June 22, 2010Assignee: NuFlare Technology, Inc.Inventors: Keiko Emi, Junichi Suzuki, Takayuki Abe, Tomohiro Iijima, Jun Yashima
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Patent number: 7669174Abstract: A pattern generation method includes changing a dimension of a pattern included in each mesh-like region of a plurality of mesh-like regions by using an area of the pattern and a total sum of lengths of circumferential sides of the pattern included in each mesh-like region to correct a dimension error of the pattern, wherein the dimension error being caused by loading effects and the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object, and generating a pattern of the dimension changed on the target object.Type: GrantFiled: February 5, 2007Date of Patent: February 23, 2010Assignee: NuFlare Technology, Inc.Inventors: Keiko Emi, Junichi Suzuki, Takayuki Abe
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Publication number: 20100015537Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position onType: ApplicationFiled: September 24, 2009Publication date: January 21, 2010Applicant: NuFlare Technology, Inc.Inventors: Keiko EMI, Junichi Suzuki, Takayuki Abe, Tomohiro Iljima, Jun Yashima
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Patent number: 7619230Abstract: A charged particle beam writing method includes inputting pattern data for writing a writing region, predicting a writing time for writing the pattern of the pattern data, acquiring, by using a correlation among a time required from a writing start time, the predicted writing time and a base dose of a charged particle beam, a base dose of the charged particle beam after an optional time from a writing start in the case in which the pattern are written, acquiring, by using a correlation among the time required from the writing start time, the predicted writing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time from the writing start in the case in which the pattern are written, calculating, by using the base dose and the proximity effect correction coefficient after the optional time, an exposure dose of the charged particle beam after an optional time from a writing start in the writing time, and writing an optional position in the writing regiType: GrantFiled: September 27, 2006Date of Patent: November 17, 2009Assignee: NuFlare Technology, Inc.Inventors: Junichi Suzuki, Keiko Emi, Takayuki Abe, Tomohiro Iijima, Hideyuki Tsurumaki
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Patent number: 7525110Abstract: A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.Type: GrantFiled: February 6, 2007Date of Patent: April 28, 2009Assignee: NuFlare Technology, Inc.Inventors: Junichi Suzuki, Keiko Emi, Takayuki Abe
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Patent number: 7511290Abstract: A method for writing a pattern on a workpiece by use of a charged particle beam, the method includes calculating a corrected dose including at least a proximity effect correction dose for correction of proximity effect, calculating a corrected residual difference-corrected dose for correcting a correction residual difference of the corrected dose, calculating a exposure dose of the charged particle beam to be corrected by the corrected dose as corrected by the correction residual difference-corrected dose, and irradiating the charged particle beam onto the workpiece in such a way as to become the exposure dose.Type: GrantFiled: February 6, 2007Date of Patent: March 31, 2009Assignee: NuFlare Technology, Inc.Inventors: Junichi Suzuki, Keiko Emi, Takayuki Abe, Tomohiro Iijima
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Publication number: 20070194250Abstract: A method for writing a pattern on a workpiece by use of a charged particle beam, the method includes calculating a corrected dose including at least a proximity effect correction dose for correction of proximity effect, calculating a corrected residual difference-corrected dose for correcting a correction residual difference of the corrected dose, calculating a exposure dose of the charged particle beam to be corrected by the corrected dose as corrected by the correction residual difference-corrected dose, and irradiating the charged particle beam onto the workpiece in such a way as to become the exposure dose.Type: ApplicationFiled: February 6, 2007Publication date: August 23, 2007Applicant: NuFlare Technology, Inc.Inventors: Junichi Suzuki, Keiko Emi, Takayuki Abe, Tomohiro Iijima
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Publication number: 20070187624Abstract: A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.Type: ApplicationFiled: February 6, 2007Publication date: August 16, 2007Applicant: NuFlare Technology, Inc.Inventors: Junichi Suzuki, Keiko Emi, Takayuki Abe
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Publication number: 20070192757Abstract: A pattern generation method includes changing a dimension of a pattern included in each mesh-like region of a plurality of mesh-like regions by using an area of the pattern and a total sum of lengths of circumferential sides of the pattern included in each mesh-like region to correct a dimension error of the pattern, wherein the dimension error being caused by loading effects and the plurality of mesh-like regions being virtually divided from a pattern forming region of a target object, and generating a pattern of the dimension changed on the target object.Type: ApplicationFiled: February 5, 2007Publication date: August 16, 2007Applicant: NuFlare Technology, Inc.Inventors: Keiko Emi, Junichi Suzuki, Takayuki Abe
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Publication number: 20070114453Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position onType: ApplicationFiled: July 28, 2006Publication date: May 24, 2007Applicant: NuFlare Technology, Inc.Inventors: Keiko Emi, Junichi Suzuki, Takayuki Abe, Tomohiro Iijima, Jun Yashima
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Publication number: 20070114459Abstract: A charged particle beam writing method includes inputting pattern data for writing a writing region, predicting a writing time for writing the pattern of the pattern data, acquiring, by using a correlation among a time required from a writing start time, the predicted writing time and a base dose of a charged particle beam, a base dose of the charged particle beam after an optional time from a writing start in the case in which the pattern are written, acquiring, by using a correlation among the time required from the writing start time, the predicted writing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time from the writing start in the case in which the pattern are written, calculating, by using the base dose and the proximity effect correction coefficient after the optional time, an exposure dose of the charged particle beam after an optional time from a writing start in the writing time, and writing an optional position in the writing regiType: ApplicationFiled: September 27, 2006Publication date: May 24, 2007Applicant: NuFlare Technology, Inc.Inventors: Junichi SUZUKI, Keiko Emi, Takayuki Abe, Tomohiro Iijima, Hideyuki Tsurumaki