Abstract: A semiconductor light emitting device includes a semiconductor light emitting laminate, and an SOI substrate including an upper semiconductor layer, an interlayer insulating film, and a lower semiconductor layer. The SOI substrate includes a first wiring electrode provided on the upper semiconductor layer through an insulating film and corresponding to a p-electrode, a second wiring electrode connected to the upper semiconductor layer and corresponding to an n-electrode, an anode that is provided on the lower semiconductor layer and connected to a first wiring electrode by a first via electrode passing through the SOI substrate, a cathode that is provided on the lower semiconductor layer through an insulating film and connected to the upper semiconductor layer by a second via electrode reaching the upper semiconductor layer. The p-electrode and the n-electrode are respectively bonded to the first wiring electrode and the second wiring electrode.

Abstract: A semiconductor light emitting device includes: a light emitting element assembly including a semiconductor light emitting element including a support substrate and a light emitting semiconductor layer provided on the support substrate, and a light guide member adhered to the semiconductor light emitting element by an element adhesive layer; and a first coating film adhered to a side surface of the light emitting element assembly by a side wall adhesive layer and formed of an inorganic material, which is a light reflector configured to cover the side surface.

Abstract: A semiconductor light emitting device includes: a light emitting element assembly including a semiconductor light emitting element including a support substrate and a light emitting semiconductor layer provided on the support substrate, and a light guide member adhered to the semiconductor light emitting element by an adhesive layer; and a first coating film formed of an inorganic material, which is a light reflector configured to cover a side surface of the light emitting element assembly.

Abstract: A lighting apparatus comprising a light source which emits light with predetermined light distribution in a fixed direction, and an optical element which is arranged in such a manner that at least part of light emitted from the light source inputs to the optical element, and can perform switching to a transmission state in which the light is transmitted, a first reflection state in which the light is reflected in a first direction, and a second reflection state in which the light is reflected in a second direction different from the first direction.

Abstract: A lighting apparatus comprising a light source which emits light with predetermined light distribution in a fixed direction, and an optical element which is arranged in such a manner that at least part of light emitted from the light source inputs to the optical element, and can perform switching to a transmission state in which the light is transmitted, a first reflection state in which the light is reflected in a first direction, and a second reflection state in which the light is reflected in a second direction different from the first direction.

Abstract: There is provided a light-emitting element which includes a first semiconductor layer, a second semiconductor layer having an electrical conductivity that is different from that of the first semiconductor layer and an active layer disposed between the first and second layers, and a first and second electrodes respectively disposed on surfaces of the first and second semiconductor layers. The first electrode comprises a plurality of electrode pieces separated from each other; and each of the electrode pieces comprises a power feed pad, and an extended portion connected to the pad and that extends in a direction away from the pad, and a terminal end portion of the extended portion of an electrode piece is opposed to a terminal end portion of the extended portion of the other electrode piece across a gap.

Abstract: There is provided a light-emitting element which includes a first semiconductor layer, a second semiconductor layer having an electrical conductivity that is different from that of the first semiconductor layer and an active layer disposed between the first and second layers, and a first and second electrodes respectively disposed on surfaces of the first and second semiconductor layers. The first electrode comprises a plurality of electrode pieces separated from each other; and each of the electrode pieces comprises a power feed pad, and an extended portion connected to the pad and that extends in a direction away from the pad, and a terminal end portion of the extended portion of an electrode piece is opposed to a terminal end portion of the extended portion of the other electrode piece across a gap.