Abstract: There are provided a plasma-curable multi-level substrate coating film-forming composition for forming a coating film having planarity on a substrate, wherein the composition can fill a pattern sufficiently.

Abstract: There is provided a novel resist underlayer film forming composition comprising a polymer having a repeating structural unit of formula (1a) and/or (1b): [wherein two R1s are each independently a C1-10 alkyl group, a C2-6 alkenyl group, an aromatic hydrocarbon group, a halogen atom, a nitro group, or an amino group, two R2s are each independently a hydrogen atom, a C1-10 alkyl group, a C2-6 alkenyl group, an acetal group, an acyl group, or a glycidyl group, R3 is an aromatic hydrocarbon group optionally having a substituent or a heterocyclic group, R4 is a hydrogen atom, a phenyl group, or a naphthyl group, two ks are each independently 0 or 1, m is an integer of 3 to 500, p is an integer of 3 to 500, X is a benzene ring, and two —C(CH3)2— groups bonded to the benzene ring are in a meta position or a para position], and a solvent.

Abstract: A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): wherein two Rs are each independently a C1-10 alkyl group, are added to one molecule of fullerene, a compound having at least two epoxy groups, and a solvent; and baking the substrate applied with the resist underlayer film-forming composition at least one time at a temperature of 240° C. or higher under an atmosphere of nitrogen, argon, or a mixture thereof.

Abstract: There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

Abstract: An electro-optic display that is flexible and may be folded in a book-like fashion. The display apparatus may include a flexible display and a bending mechanism for accommodating the flexible display in a closed state. Portions of the flexible electro-optic display can be coupled to regions of the planar support members so that when the display is in an open state, the display lays flat and smooth. In advanced embodiments, the electro-optic display may include touch sensing or a digitizing layer to record interactions with a stylus.

Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

Abstract: A resist underlayer film not undergoing intermixing with a resist layer, having high dry etching and heat resistance, exhibiting high temperature low mass loss, and exhibiting even stepped substrate coatability, includes a polymer containing a unit structure of the formula (1): The unit structure of formula (1) is a unit structure of the formula (2): A method for producing a semiconductor device, includes forming, on a semiconductor substrate, a resist underlayer film using a resist underlayer film-forming composition, forming a hard mask on the resist underlayer film, a resist film on the hard mask, a resist pattern by irradiation with light or an electron beam and development of the resist film, a pattern by etching the hard mask using the resist pattern, a pattern by etching the underlayer film using the patterned hard mask, and processing the substrate using the patterned resist underlayer film.

Abstract: There is provided a novel resist underlayer film forming composition comprising a polymer having a repeating structural unit of formula (1a) and/or (1b): [wherein two R1s are each independently a C1-10 alkyl group, a C2-6 alkenyl group, an aromatic hydrocarbon group, a halogen atom, a nitro group, or an amino group, two R2s are each independently a hydrogen atom, a C1-10 alkyl group, a C2-6 alkenyl group, an acetal group, an acyl group, or a glycidyl group, R3 is an aromatic hydrocarbon group optionally having a substituent or a heterocyclic group, R4 is a hydrogen atom, a phenyl group, or a naphthyl group, two ks are each independently 0 or 1, m is an integer of 3 to 500, p is an integer of 3 to 500, X is a benzene ring, and two —C(CH3)2— groups bonded to the benzene ring are in a meta position or a para position], and a solvent.

Abstract: A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2), wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.

Abstract: A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): a polymer containing a unit structure of the following Formula (2): ?O—Ar1???Formula (2) a polymer containing a structural unit of the following Formula (3): ?O—Ar2—O—Ar3-T-Ar4???Formula (3) a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

Abstract: A material to form a resist underlayer film having properties achieving heat resistance, flattening properties, and etching resistance through lithography. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): (wherein R1 is an organic group having at least two amines and at least three C6-40 aromatic rings, R2 and R3 are each a hydrogen atom, a C1-10 alkyl group, a C6-40 aryl group, a heterocyclic group, or a combination thereof, and the alkyl group, the aryl group, and the heterocyclic group are optionally substituted with a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group, or a hydroxy group, or R2 and R3 optionally form a ring together). The above mentioned composition t, wherein R1 is a divalent organic group derived from N,N?-diphenyl-1,4-phenylenediamine.

Abstract: In an apex 34 of a tire 2, a reinforcing portion 48 is located inward of a main body 46 in an axial direction. When a position on an outer surface of the tire 2 at which position a height from a BBL is 14 mm is defined as a first point P1 and a position on the outer surface of the tire 2 at which position a height from the BBL is 20 mm is defined as a second point P2, the reinforcing portion 48 overlaps the first point P1 and the second point P2 in a radial direction. A loss tangent of the reinforcing portion 48 is equal to a loss tangent of the main body 46 or less than the loss tangent. A hardness of the reinforcing portion 48 is equal to a hardness of the main body 46 or greater than the hardness.

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40.

Abstract: A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

Abstract: A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin. The method is applied to a light extraction layer of an LED or a low-reflective glass of a solar cell.

Abstract: A stepped substrate coating composition includes: a compound (E) containing partial structures (I) and (II) and a solvent (F). The partial structure (II) contains a hydroxy group generated by an epoxy group and a proton-generating compound reaction; the partial structure (I) is at least one partial structure selected from partial structures of Formula (1-1) to Formula (1-5) or a partial structure combining a partial structure of Formula (1-6) and Formula (1-7) or Formula (1-8); and the partial structure (II) is a partial structure of Formula (2-1) or Formula (2-2). The photocurable stepped substrate coating composition wherein in the compound (E), the epoxy group and the hydroxy group are contained in a molar ratio of 0?(Epoxy group)/(Hydroxy group)?0.5 and the partial structure (II) is contained in a molar ratio of 0.01?(Partial structure (II))/(Partial structure (I)+Partial structure (II))?0.8.

Abstract: The present invention provides a novel resist underlayer film-forming composition capable of forming a resist underlayer film that has etching resistance and excellent embeddability in a surface having concave portions and/or convex portions. A resist underlayer film-forming composition comprising a polymer having a structural unit represented by formula (1) or formula (2): (wherein X is an arylene group, n is 1 or 2, and R1, R2, R3, and R4 are each independently a hydrogen atom, a hydroxy group, a C1-3 alkyl group, or a phenyl group), and a solvent.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Abstract: A flexible, wearable apparatus comprising a flexible display, a support member and a retainer. In some embodiments, the flexible, wearable apparatus can be used in a flat or rounded configuration. In some embodiments, the flexible support member is formed to provide a substantially planar viewing surface for the electrophoretic display when the flexible, wearable apparatus is in a rounded state.

Abstract: An electro-optic display that is flexible and may be folded in a book-like fashion. The display apparatus may include a flexible display and a bending mechanism for accommodating the flexible display in a closed state. Portions of the flexible electro-optic display can be coupled to regions of the planar support members so that when the display is in an open state, the display lays flat and smooth. In advanced embodiments, the electro-optic display may include touch sensing or a digitizing layer to record interactions with a stylus.