Abstract: In an information terminal apparatus 1 having a thin housing structure including at least a display (not shown), the information terminal apparatus being driven by batteries 102, a battery pack 10 to accommodate therein the batteries 102 includes a rotary support mechanism for rotating the battery pack 10 about the intermediate portion of the rear wall side 1d of this display so that the battery pack becomes freely openable and closable from the lower portion of the rear wall side 1d of this display, wherein the rotated battery pack 10 is used as a stand to enable this display to rise to the erect position and the battery pack 10 is directly exposed to the air.

Abstract: An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2).

Abstract: A Separation by Implanted Oxygen (“SIMOX”) substrate and method for making thereof are provided. The SIMOX substrate can be produced by employing an oxygen ion implantation amount in a low dose range. The substrate is a high quality SOI substrate having an increased thickness of a BOX layer. More specifically, the SIMOX substrate and method for making the same are provided such that a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter. A buried oxide layer is provided by applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder. Then, another high temperature heat treatment is applied.

Abstract: A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film.

Abstract: This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Abstract: An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2).

Abstract: An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith.

Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode.

Abstract: In an information terminal apparatus 1 having a thin housing structure including at least a display (not shown), the information terminal apparatus being driven by batteries 102, a battery pack 10 to accommodate therein the batteries 102 includes a rotary support mechanism for rotating the battery pack 10 about the intermediate portion of the rear wall side id of this display so that the battery pack becomes freely openable and closable from the lower portion of the rear wall side 1d of this display, wherein the rotated battery pack 10 is used as a stand to enable this display to rise to the erect position and the battery pack 10 is directly exposed to the air.

Abstract: The present invention provides a SIMOX substrate produced by employing an oxygen ion implantation amount in a low dose range, which substrate is a high quality SOI substrate having an increased thickness of a BOX layer, and a method of producing the same, and more specifically, provides a method of producing a SIMOX substrate wherein a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter, characterized by: forming the buried oxide layer through applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder; and then applying another high temperature heat treatment, and a SIMOX substrate produced by said method having a surface silicon la

Abstract: A SIMOX substrate having a buried oxide layer and a surface single crystal silicon layer formed therein is produced by a method which comprises implanting oxygen ions into a silicon single crystal substrate and subsequently performing a heat treatment at an elevated temperature on the substrate. The method is characterized by performing the former stage of the heat treatment at a temperature of not lower than 1150° C. and lower than the melting point of single crystal silicon in an atmosphere obtained by adding oxygen under a partial pressure of not more than 1% to an inert gas and subsequently performing at least part of the latter stage of the heat treatment by increasing the partial pressure of oxygen within a range in which no internal oxidation is suffered to occur in the buried oxide layer. It can also be prepared by performing the former stage of the high temperature heat treatment at a temperature of not lower than 1150° C.

Abstract: A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm−2 or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm2.

Abstract: An exhaust emission purifier includes a catalyst unit disposed in an exhaust pipe of an engine. Electrodes (reaction adjustment unit) are provided on a honeycomb carrier of the catalyst unit in a layered form in order to apply an electric field to the vicinity of the catalyst surface to thereby adjust the catalytic reaction. An ECU serves as a status detection unit to detect factors which affect the exhaust gas purifying performance of the catalyst unit (i.e., operating conditions), and serves as a control unit which controls the electric field applied by the electrodes, on the basis of the detected operating conditions.

Abstract: The present plasma type exhaust gas cleaning apparatus comprises a dielectric (5) arranged between a discharge electrode (7) and a ground electrode (8). The dielectric has a plurality of independent cavities (6) formed therein. The exhaust gas from combustion equipment (1) flows through the interiors of the plurality of independent cavities (6). Thus, in the plasma type exhaust gas cleaning apparatus, the discharge electrode (7) and the ground electrode (8) are securely partitioned by the cavities (6). When a voltage from a high voltage generator (9) is applied to between the discharge electrode (7) and the ground electrode (8), plasma resulting from corona discharges occurs in each individual cavity (6) without arising directly across the discharge electrode (7) and the ground electrode (8). The exhaust gas is thereby cleaned up.

Abstract: A SIMOX substrate having a buried oxide layer and a surface single crystal silicon layer formed therein is produced by a method which comprises implanting oxygen ions into a silicon single crystal substrate and subsequently performing a heat treatment at an elevated temperature on the substrate. The method is characterized by performing the former stage of the heat treatment at a temperature of not lower than 1150° C. and lower than the melting point of single crystal silicon in an atmosphere obtained by adding oxygen under a partial pressure of not more than 1% to an inert gas and subsequently performing at least part of the latter stage of the heat treatment by increasing the partial pressure of oxygen within a range in which no internal oxidation is suffered to occur in the buried oxide layer. It can also be prepared by performing the former stage of the high temperature heat treatment at a temperature of not lower than 1150° C.

Abstract: The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.

Abstract: An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R1, R2, . . . Rn) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V1, V2, . . . and Vn) are connected to the reactor chambers (R1, R2, . . . and Rn), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C.

Abstract: An exhaust emission purifier includes a catalyst unit disposed in an exhaust pipe of an engine. Electrodes (reaction adjustment unit) are provided on a honeycomb carrier of the catalyst unit in a layered form in order to apply an electric field to the vicinity of the catalyst surface to thereby adjust the catalytic reaction. An ECU serves as a status detection unit to detect factors which affect the exhaust gas purifying performance of the catalyst unit (i.e., operating conditions), and serves as a control unit which controls the electric field applied by the electrodes, on the basis of the detected operating conditions.

Abstract: The present plasma type exhaust gas cleaning apparatus comprises a dielectric (5) arranged between a discharge electrode (7) and a ground electrode (8). The dielectric has a plurality of independent cavities (6) formed therein. The exhaust gas from combustion equipment (1) flows through the interiors of the plurality of independent cavities (6). Thus, in the plasma type exhaust gas cleaning apparatus, the discharge electrode (7) and the ground electrode (8) are securely partitioned by the cavities (6). When a voltage from a high voltage generator (9) is applied to between the discharge electrode (7) and the ground electrode (8), plasma resulting from corona discharges occurs in each individual cavity (6) without arising directly across the discharge electrode (7) and the ground electrode (8). The exhaust gas is thereby cleaned up.

Abstract: An apparatus and method for treating exhaust gases. A plurality of stages of reactor chambers are connected in series in the direction of an exhaust gas flow. High-voltage power supplies are connected to the reactor chambers In each of these reactor chambers, a streamer discharger plasma is generated. The more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is higher on the upstream side of the exhaust gas flow and the electron density is lower on the downstream side. A pulse generator is provided in which a high voltage, which is an output voltage of a D.C. charger (V0), is simultaneously applied to a plurality of distributed constant lines, which are connected in parallel with one another, by a signal shortcircuit switch (S1).