Abstract: In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain areas, conventionally, the N-type carrier supply layer and the N-type active layer are doped with Si. In place of doping with Si, doping with Se or Te is adopted. Thereby, in high temperature annealing process for activating the ion implanted areas, which serves as source and drain areas, unlike the Si donor, inactivation of donor due to reaction with F-atoms occurs scarcely with respect to the diffusion of F-atoms on the surface of the epitaxial substrate, which adhered during the process. Further, since the Se and Te are impurities from VI-family, when the Se or Te occupies any grid position of atoms from III-family or V-family, the Se or Te serves as the donor. Accordingly, a high performance heterojunction FET of little deterioration of the FET characteristics can be obtained.

Abstract: A heterojunction bipolar transistor comprises a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The emitter layer includes a first semiconductor layer covering the entire top surface of the base layer and a second semiconductor layer formed on a predetermined part of the first semiconductor layer. An inactivated region is formed, by ion implantation, in a region of the collector layer located below the base layer except for a part thereof corresponding to the second semiconductor layer. The edge of the inactivated region is located away from the edge of the second semiconductor layer, and a region of the first semiconductor layer between the edge of the inactivated region and the edge of the second semiconductor layer is depleted.

Abstract: A laminate film includes a guard film layer (A), a clear coating layer (B), and a color coating layer (C). A color coating material, from which the color coating layer (C) is made, contains a shining material (C3) containing at least an aluminum flake. If necessary, the color coating layer further contains an orientation control material (C4).

Abstract: A short pulse generation system and method of generating a short pulse signal are provided. The system includes a fiber chain having an input for receiving an optical signal having a plurality of optical pulses. The fiber chain is nonlinear with respect to the optical signal and includes a first normal fiber segment having a relatively small chromatic parameter, a first abnormal fiber segment having a relatively large chromatic parameter coupled to an output of the first normal fiber segment, and a second abnormal fiber segment having a relatively small chromatic parameter coupled to an out of the first abnormal fiber segment. The system includes a filter stage coupled to an output of the fiber chain and that has a transparent wavelength selected to regenerate the signal. A short pulse signal is produced when the optical signal is coupled to the input.

Abstract: Methods and apparatus for providing a time slot switch which performs switching in the optical domain without the need for O-E-O conversion is described. The time slot switching device of the present invention may be part of a large switching device capable of performing switching and other function on WDM, TDM and WDM signals which are time division multiplexed. An optical time slot switch implemented using a time slot demultiplexer, optical cross-connect, variable delay lines and time slot multiplexer are described. Frequency conversion may be performed on a per time slot basis in cases where time slot signals are switched between lines using different wavelengths. Wave division demultiplexers and multiplexers can be added to the basic time slot switch to provide support for WDM switching and switching of TDM signals which are transmitted using wave division multiplexing.

Abstract: A nonstaining coating composition which comprises as essential components (A) a specific aliphatic sulfonic acid compound or amine salt thereof, (B) a compound having per molecule at least one functional group selected among carboxly, a carboxly anhydride group, and a carboxly group blocked with an alkyl vinyl ether, (C) a specific organosilicate and/or a condensate thereof, and (D) a resin having epoxy groups and/or alkoxysilyl groups in the molecule; and a method of finish coating. They give a cured coating film which has nonstaining properties based on a high degree of hydrophilicity from immediately after the formation thereof and has satisfactory long-term weatherability, water resistance, and chemical resistance. The film can impart an excellent finish appearance to the article.

Abstract: A nonstaining coating composition which comprises as essential components (A) a specific aliphatic sulfonic acid compound or amine salt thereof, (B) a compound having per molecule at least one functional group selected among carboxly, a carboxly anhydride group, and a carboxyl group blocked with an alkyl vinyl ether, (C) a specific organosilicate and/or a condensate thereof, and (D) a resin having epoxy groups and/or alkoxysilyl groups in the molecule; and a method of finish coating. They give a cured coating film which has nonstaining properties based on a high degree of hydrophilicity from immediately after the formation thereof and has satisfactory long-term weatherability, water resistance, and chemical resistance.

Abstract: A paint substitute film 1 is provided which has an excellent property that permits universal application to a variety of components, for example to a complexly shaped component, without decreasing marketability of the component due to undesirable change in color. The paint substitute film 1 includes a color coat 3 which contains metallic pigments 5 and orientation inhibitors 6 for inhibiting orientation of the metallic pigments 5. When the paint substitute film 1 is bonded onto an exterior component of an automobile or the like, the paint substitute film 1 is drawn, but the orientation inhibitors 6 each serve as an obstacle to prevent the metallic pigments 5 from being uniformly oriented toward a direction parallel to the drawing direction. Accordingly, even after the paint substitute film 1 is drawn, rays of light incident on the film 1 diffuses upon reflection off the metallic pigments 5, and thus unfavorable alteration of color in the film 1 can be prevented.

Abstract: A paint substitute film product 1 for surfacing an object S includes a decorative coat including a light-curable resinous layer, and a protective film provided over a surface of the light-curable resinous layer of the decorative coat. An adhesion strength AS1 between a surface of the object and the decorative coat, an adhesion strength AS2 between the protective film and the decorative coat, and a tensile strength TS of the decorative coat are configured to exhibit the equation: AS1>AS2>TS. The paint substitute film product 1 can deliver increased economy in surfacing the object, and the step of forming the object to be surfaced and the step of applying the paint substitute film can be provided independently.

Abstract: In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain areas, conventionally, the N-type carrier supply layer and the N-type active layer are doped with Si. In place of doping with Si, doping with Se or Te is adopted. Thereby, in high temperature annealing process for activating the ion implanted areas, which serves as source and drain areas, unlike the Si donor, inactivation of donor due to reaction with F-atoms occurs scarcely with respect to the diffusion of F-atoms on the surface of the epitaxial substrate, which adhered during the process. Further, since the Se and Te are impurities from VI-family, when the Se or Te occupies any grid position of atoms from III-family or V-family, the Se or Te serves as the donor. Accordingly, a high performance heterojunction FET of little deterioration of the FET characteristics can be obtained.

Abstract: A short pulse generation system and method of generating a short pulse signal are provided. The system includes a fiber chain having an input for receiving an optical signal having a plurality of optical pulses. The fiber chain is nonlinear with respect to the optical signal and includes a first normal fiber segment having a relatively small chromatic parameter, a first abnormal fiber segment having a relatively large chromatic parameter coupled to an output of the first normal fiber segment, and a second abnormal fiber segment having a relatively small chromatic parameter coupled to an out of the first abnormal fiber segment. The system includes a filter stage coupled to an output of the fiber chain and that has a transparent wavelength selected to regenerate the signal. A short pulse signal is produced when the optical signal is coupled to the input.

Abstract: A transmit optical subassembly (TOSA) includes a spot-size-converted (SSC) semiconductor laser coupled to an optical fiber without a lens or isolator. The spot-size-converted semiconductor laser includes an active region and an expander region that expands the spot size of the laser while maintaining efficient active laser performance. The SSC laser is coupled to a submount and passively aligned to an optical fiber positioned within a V-shaped groove formed within the submount. The SSC laser includes a narrow far field advantageous for providing a high coupling efficiency and high quality data transmission. The SSC laser is resistant to back reflection and produces a 1.3 or 1.55 micron optical wavelength and a data rate ranging from 1 to 10 Gbps. The TOSA provides high coupled power due to narrow far field, with potential extra reflection resistance due to absorption and mode transfer losses in coupling reflections through the expander back into the active region.

Abstract: Methods and apparatus for providing improving optical signal transmission results over standard mode fiber using a combination of negative chirp, low extinction ratio, and self-phase modulation transmission techniques in combination are described. The use of pre-transmission signal distortion in combinations with one or more of the other transmission techniques is also described. Pre-transmission signal distortion may be introduced by controlling a modulator with a large symmetric AC signal which causes the modulator to operation in a non-linear region or, alternatively, by using a relatively small non-symmetric AC signal to drive the modulator. Use of the small non-symmetric signal has the advantage of reduced power requirements. The pre-transmission distortion acts to counter some of the distortion introduced by the transmission of the signal over an optic fiber.

Abstract: Simultaneous demultiplexing and clock recovery of high-speed (e.g., 80 Gbps or 160 Gbps) optical time division multiplexing (OTDM) signals is achieved using a tandem electro-absorption modulator (TEAM). The TEAM has a monolithically integrated SOA to compensate the insertion loss and two EAMs to reduce the switching window. The demultiplexing and clock recovery may be performed by a single TEAM, or by two or more TEAMs. A fiber Raman amplifier may be used to boost the intensity of the OTDM signals during transmission.

Abstract: A nonstaining coating composition which comprises as essential components (A) a specific aliphatic sulfonic acid compound or amine salt thereof, (B) a compound having per molecule at least one functional group selected among carboxyl, a carboxylic anhydride group, and a carboxyl group blocked with an alkyl vinyl ether, (C) a specific organosilicate and/or a condensate thereof, and (D) a resin having epoxy groups and/or alkoxysilyl groups in the molecule; and a method or finish coating.

Abstract: A learning method for a neural network, in which at least a portion of the interconnection strength between neurons takes discrete values, includes the steps of updating an imaginary interconnection strength taking continuous values by using the quantity of update of the interconnection strength which has been calculated by using the discrete interconnection strength, and discretizing the imaginary interconnection strength so as to provide a novel interconnection strength.

Abstract: A novel InP-based semiconductor laser comprises an unpatterned active region that is essentially co-extensive with the substrate of the laser, an electron stopper layer, and a separate confinement heterostructure (SCH) layer that has a portion of thickness greater than the thickness of the remainder of the SCH layer. The difference in thickness serves to provide lateral guiding of the laser mode. A patterned current blocking layer is disposed on the SCH layer, with a window in the blocking layer defining the region of increased thickness of the SCH layer. The inventive laser is readily manufacturable and can have improved properties.

Abstract: An optical logic element includes an optical bistable npnp element for switching from a high resistance state to a low resistance state in response to electrical bias and incident light energy in which the switching time becomes shorter as the incident light energy becomes larger. The elements emit light in the low resistance on state. The optical logic element is designed for analog threshold processing of light energy. A plurality of optical bistable elements connected in parallel differentially threshold process incident light energy. An opto-electronic conversion apparatus includes linear arrays of light emitting elements, a two-dimensional array of optical memories, i.e., optical bistable elements, and linear light receiving element arrays arranged transverse to the light emitting element arrays, all integrated with each other. Corresponding light emitting elements, optical memories, and light receiving elements permit arbitrary transfers of signals.

Abstract: In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer.

Abstract: A surface-emitting semiconductor laser device comprises a first electrode, a first-conductivity-type clad layer provided on the first electrode, an active layer provided on the first-conductivity-type clad layer, a guide layer provided on the active layer and having an even-numbered-order diffraction grating opposite to the active layer, a second-conductivity-type clad layer provided on the guide layer, contact layers provided on portions of the second-conductivity-type clad layer, and second electrodes provided on the contact layers.