Abstract: An image processing apparatus comprising: a first identifying unit configured to identify the position of an object that is a tracking target based on an image obtained by an imaging unit; a second identifying unit configured to identify the position of the object based on radio waves received from a wireless device that the object holds; a first determination unit configured to determine whether or not the object overlaps with another object in the image obtained by the imaging unit; a second determination unit configured to determine whether or not a distance between the object and the another object in the image obtained by the imaging unit has been separated by a predetermined distance or more; and a tracking unit configured to perform tracking of the object based on the position of the object identified by the first identifying unit, wherein if the first identifying unit determines that the object overlaps with the another object in the image obtained by the imaging unit, and then if the second identifyi

Abstract: An imaging apparatus capable of communicating with a wireless terminal held by an object, comprising: a first detection unit configured to detect a position of the wireless terminal based on a direction of radio waves received from the wireless terminal held by the object; a second detection unit configured to detect a position of the object based on image data obtained by an imaging unit; a tracking unit configured to control the imaging apparatus so that a position detected by the first detection unit or the second detection unit is tracked; a determination unit configured to determine a stability of detection by the first and second detection units; and a control unit configured to, if the stability of detection by one from among the first and second detection units is determined to be less than a first value by the determination unit, cause the other detection unit to operate, and configured to stop the operation of the one detection unit if the stability of the other detection unit is determined to be a

Abstract: An imaging apparatus configured to change an imaging direction and to perform wireless communication includes at least one memory storing instructions, and at least one processor that is configured, upon execution of the stored instructions, to act as a position identification unit configured to identify a position of a subject based on an incoming direction of a radio wave received from a wireless apparatus held by the subject, and a control unit configured to, based on the identified position of the subject, perform control to change the imaging direction based on the subject not being in a predetermined region of a captured image, and not to change the imaging direction based on the subject being in the predetermined region.

Abstract: An imaging apparatus configured to change an imaging direction and to perform wireless communication includes at least one memory storing instructions, and at least one processor that is configured, upon execution of the stored instructions, to act as a position identification unit configured to identify a position of a subject based on an incoming direction of a radio wave received from a wireless apparatus held by the subject, and a control unit configured to, based on the identified position of the subject, perform control to change the imaging direction based on the subject not being in a predetermined region of a captured image, and not to change the imaging direction based on the subject being in the predetermined region.

Abstract: A lateral high-breakdown-voltage transistor comprises an n? drain region and an n+ source region formed in a p? silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

Abstract: A lateral high-breakdown-voltage transistor comprises an n−drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

Abstract: A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

Abstract: A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

Abstract: A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

Abstract: A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.