Abstract: A polishing apparatus capable of eliminating a variation in film thickness along a circumferential direction of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a polishing head including an elastic membrane for pressing the substrate against the polishing surface and a retainer ring arranged so as to surround the substrate, the retainer ring being capable of contacting the polishing surface; a rotating mechanism configured to rotate the polishing head about its own axis; a rotation angle detector configured to detect a rotation angle of the polishing head; and a polishing controller configured to periodically change a polishing condition of the substrate in synchronization with the rotation angle of the polishing head.

Abstract: According to one embodiment, a retainer ring for retaining a substrate to be polished, includes: an inside ring arranged to enclose the substrate; and an outside ring arranged outside the inside ring, abrasion-resistant of the outside ring being higher than abrasion-resistant of the inside ring, wherein the inside ring having a thickness in a radial direction in a range from a minimum of 0.05 mm to a maximum of 5 mm.

Abstract: A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface configured to press the substrate against the polishing surface, a retaining ring coupled to the substrate holding surface and configured to surround the substrate, wherein the retaining ring is brought into contact with the polishing surface during operation of the polishing apparatus, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface, the at least one local load exerting mechanism being arranged so as not to move in accordance with the substrate holder.

Abstract: A polishing apparatus capable of eliminating a variation in film thickness along a circumferential direction of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a polishing head including an elastic membrane for pressing the substrate against the polishing surface and a retainer ring arranged so as to surround the substrate, the retainer ring being capable of contacting the polishing surface; a rotating mechanism configured to rotate the polishing head about its own axis; a rotation angle detector configured to detect a rotation angle of the polishing head; and a polishing controller configured to periodically change a polishing condition of the substrate in synchronization with the rotation angle of the polishing head.

Abstract: An elastic membrane capable of precisely controlling a polishing profile in a narrow area of a wafer edge portion is disclosed. The elastic membrane includes a contact portion to be brought into contact with a substrate; a first edge circumferential wall extending upwardly from a peripheral edge of the contact portion; and a second edge circumferential wall having a horizontal portion connected to an inner circumferential surface of the first edge circumferential wall. The inner circumferential surface of the first edge circumferential wall includes an upper inner circumferential surface and a lower inner circumferential surface, both of which are perpendicular to the contact portion. The upper inner circumferential surface extends upwardly from the horizontal portion of the second edge circumferential wall, and the lower inner circumferential surface extends downwardly from the horizontal portion.

Abstract: A polishing device is provided to suppress deterioration in reproducibility of a polishing profile due to a variation or change with time of a shape of a retaining ring of a substrate holding member for each of retaining rings. The polishing device includes: a polishing head configured to press a substrate against a polishing pad and have a retainer ring surrounding the substrate pressed against the polishing pad; a measurement sensor configured to measure a surface shape of the retainer ring; and a controller configured to determine a polishing condition of the substrate based on the surface shape of the retainer ring measured by the measurement sensor.

Abstract: A substrate holder capable of preventing an increase in a polishing rate of an edge portion of a substrate, even when polishing a plurality of substrates successively, is disclosed. The substrate holder includes: a top ring body configured to hold the substrate; and a retaining ring disposed so as to surround the substrate held by the top ring body. The retaining ring includes a pad pressing structure in an annular shape which is to be brought into contact with the polishing pad and the pad pressing structure has a width in a range of 3 mm to 7.5 mm.

Abstract: A polishing apparatus capable of precisely controlling a polishing profile, particularly a polishing profile in an edge portion, of a wafer is disclosed. The polishing apparatus includes: a top ring shaft; a housing fixed to the top ring shaft; a flexible membrane configured to press a wafer against a polishing pad; a top ring body configured to hold the flexible membrane; a retaining ring coupled to the top ring body and disposed so as to surround the flexible membrane; a gimbal mechanism configured to allow the top ring body and the retaining ring to tilt with respect to the housing; and a local load exerting mechanism configured to exert a downward local load on a part of the retaining ring.

Abstract: A dressing method is used to dress a polishing pad of a polishing apparatus for polishing a substrate. This method includes repetitively moving the dresser on an upper surface of the polishing pad in a radial direction of the polishing pad so as to perform a dressing process on the polishing pad, during the dressing process, measuring a height of an upper surface of the polishing pad at a predetermined point in one of plural zones on the polishing surface, and repeating the repetitive moving of the dresser and the measuring of the height of the upper surface of the polishing pad so as to measure the height of the upper surface of the polishing pad in all of the plural zones.

Abstract: An elastic member for use in a substrate holding apparatus includes an elastic member and a first reinforcing member. The first reinforcing member has a higher rigidity than the elastic membrane and reinforces substantially an entire area of the contact portion of the elastic membrane. The contact portion of the elastic member has a contact portion for contact with the substrate. The first peripheral wall portion of the elastic membrane is coupled to a peripheral end of the contact portion and extends upwardly. The second peripheral wall portion of the elastic member defines a first chamber on an outer side thereof and a second chamber on an inner side thereof. The first reinforcing member is embedded in substantially the entire area of the contact portion of the elastic membrane.

Abstract: A substrate holding apparatus is used for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing and planarizing the substrate. The substrate holding apparatus includes an elastic membrane, a top ring body for holding the elastic membrane, and a plurality of pressure chambers partitioned by at least one partition wall of the elastic membrane. The substrate is held by a lower surface of the elastic membrane and pressed against the polishing surface with a fluid pressure by supplying a pressurized fluid to the pressure chambers. The substrate holding apparatus further include a stopper configured to limit the inflation of the elastic membrane by being brought into contact with a part of the partition wall of the elastic membrane or an extending member extending from a rear surface of the elastic membrane whose surface serves as a substrate holding surface.

Abstract: A polishing method is used for polishing a film formed on a substrate by pressing the substrate against a polishing pad. The polishing method includes preparing, in advance, an algorithm for correction of polishing time from a relationship between a known amount of wear of the polishing pad or a known thickness of the polishing pad, and a polishing time and a polishing amount; setting a polishing target value for the film; and measuring an amount of wear of the polishing pad or a thickness of the polishing pad. The polishing method further includes determining an optimal polishing time for the polishing target value from the measured amount of wear of the polishing pad or the measured thickness of the polishing pad and from the algorithm; and polishing the film for the determined optimal polishing time.

Abstract: A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface configured to press the substrate against the polishing surface, a retaining ring coupled to the substrate holding surface and configured to surround the substrate, wherein the retaining ring is brought into contact with the polishing surface during operation of the polishing apparatus, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface, the at least one local load exerting mechanism being arranged so as not to move in accordance with the substrate holder.

Abstract: A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus includes a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed with respect to the seal member such that at least part of the auxiliary cathode is exposed on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.