Abstract: Disclosed is a method for manufacturing an electronic component device, the method including, in the stated order: a step of disposing an IC chip and a chip-type passive component on a temporary fixing material layer of a carrier substrate, the passive component having a main body part and a connection part provided on an outer surface of the main body part, the connection part being interposed between the main body part and the temporary fixing material layer to form a gap between the main body part and the temporary fixing material layer; a step of forming a sealing layer sealing the IC chip and the passive component on the temporary fixing material layer by a sealing material containing a curable resin and a filler; a step of curing the sealing layer to form a sealed structure; and a step of peeling off the carrier substrate from the sealed structure.

Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

Abstract: A semiconductor device manufacturing method includes a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with light and thereby separating the semiconductor member from the supporting member. The temporary fixation material layer has a light absorbing layer that generates heat upon absorbing light and a resin cured product layer including a cured product of a curable resin component. The curable resin component includes a hydrocarbon resin, and a storage modulus at 25° C. for the cured product of the curable resin component is 5 to 100 MPa.

Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.