Abstract: A method of patterning a substrate includes dispensing droplets of a resist onto a first region and a second region of a surface, pressing a patterned portion of an imprint template into the resist in the first region, curing the resist on the surface, and then removing the imprint template from the resist. An image of the resist in the second region is acquired to evaluate wettability of the resist. In some examples, the evaluation of wettability may be performed by image analysis on the acquired image and used in determining whether or not the patterning of the substrate was successful or likely to have been successful.

Abstract: A method of patterning a substrate includes dispensing droplets of a resist onto a first region and a second region of a surface, pressing a patterned portion of an imprint template into the resist in the first region, curing the resist on the surface, and then removing the imprint template from the resist. An image of the resist in the second region is acquired to evaluate wettability of the resist. In some examples, the evaluation of wettability may be performed by image analysis on the acquired image and used in determining whether or not the patterning of the substrate was successful or likely to have been successful.

Abstract: An electron beam drawing method is an electron beam drawing method for manufacturing a lithography original plate in a variable shaped beam method. The electron beam drawing method includes extracting a hot spot in a circuit pattern layout of the lithography original plate at which a circuit pattern in the circuit pattern layout and a preset hot spot drawing pattern agree with each other. The electron beam drawing method further includes generating drawing data representing the circuit pattern layout with at least a part of the circuit pattern at the extracted hot spot replaced with a relieving drawing pattern. The electron beam drawing method further includes performing drawing on a resist applied to the substrate in the variable shaped beam method based on the drawing data.

Abstract: According to one embodiment, a writing data correction method includes preparing a data table having a combination of a pattern resizing amount, a beam irradiation amount, and a back-scattering coefficient for each pattern size; converting, into writing data, a layout obtained by dividing a design layout into a plurality of regions in accordance with each pattern size, resizing patterns of the design layout writing based on the pattern resizing amounts corresponding to the pattern sizes contained in the respective regions, and executing a proximity effect correction for the resized patterns contained in the respective regions based on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the respective regions, and on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the regions adjacent to the respective regions.