Abstract: This disclosure relates generally to physically unclonable function (PUF) circuitry along with methods of generating numbers. In one embodiment, the PUF circuitry includes a memory, a memory control circuitry, and whitening circuitry. To reduce or eliminate the systematic bias from the array, whitening circuitry is configured to generate a random number comprising random number bits in response to the memory control circuit implementing at least one sequence of memory cycles on the array of the memory cells in the memory. The whitening circuitry is configured to provide the random number bits of the random number based on the variable bit states stored by the array of the memory cells. On average the whitening circuitry is configured to provide approximately half of the random number bits in the first bit state and half of random number bits in a second bit state.

Abstract: This disclosure relates generally to physically unclonable function (PUF) circuitry along with methods of generating numbers. In one embodiment, the PUF circuitry includes a memory, a memory control circuitry, and whitening circuitry. To reduce or eliminate the systematic bias from the array, whitening circuitry is configured to generate a random number comprising random number bits in response to the memory control circuit implementing at least one sequence of memory cycles on the array of the memory cells in the memory. The whitening circuitry is configured to provide the random number bits of the random number based on the variable bit states stored by the array of the memory cells. On average the whitening circuitry is configured to provide approximately half of the random number bits in the first bit state and half of random number bits in a second bit state.

Abstract: The present invention relates to radiation hardening by design (RHBD), which employs layout and circuit techniques to mitigate the damaging effects of ionizing radiation. Reverse body biasing (RBB) of N-type metal-oxide-semiconductor (NMOS) transistors may be used to counteract the effects of trapped positive charges in isolation oxides due to ionizing radiation. In a traditional MOS integrated circuit, input/output (I/O) circuitry may be powered using an I/O power supply voltage, and core circuitry may be powered using a core power supply voltage, which is between the I/O power supply voltage and ground. However, in one embodiment of the present invention, the core circuitry is powered using a voltage difference between the core power supply voltage and the I/O power supply voltage. The bodies of NMOS transistors in the core circuitry are coupled to ground; therefore, a voltage difference between the core power supply voltage and ground provides RBB.