Patents by Inventor Keith G. Taft

Keith G. Taft has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4187516
    Abstract: A semiconductor integrated circuit which is reduced in size by having active and/or passive elements in an epitaxial layer having a [100] crystallographic surface, and having anisotropically etched regions with sloped [111] crystallographic surface walls which isolate adjacent semiconductor elements and/or regions of semiconductor material beneath said elements. Conductors interconnecting said elements are supported on the [100] and [111] crystallographic surfaces and contact said elements and/or said high conductivity regions through apertures in surface passivating protective coatings on said surfaces.
    Type: Grant
    Filed: September 13, 1977
    Date of Patent: February 5, 1980
    Assignee: Raytheon Company
    Inventors: Wilhelm H. Legat, Keith G. Taft, Karl H. Tiefert
  • Patent number: 4070748
    Abstract: A semiconductor integrated circuit which is reduced in size by having active and/or passive elements in an epitaxial layer having a [100] crystallographic surface, and having anisotropically etched regions with sloped [111] crystallographic surface walls which isolate adjacent semiconductor elements and/or regions of semiconductor material beneath said elements. Conductors interconnecting said elements are supported on the [100] and [111] crystallographic surfaces and contact said elements and/or said high conductivity regions through apertures in surface passivating protective coatings on said surfaces.
    Type: Grant
    Filed: August 30, 1976
    Date of Patent: January 31, 1978
    Assignee: Raytheon Company
    Inventors: Wilhelm H. Legat, Keith G. Taft, Karl H. Tiefert
  • Patent number: 3979612
    Abstract: A semiconductor integrated circuit having microminiature active and/or passive elements in which a crystallographic surface of a semiconductor body lies in the [100] crystallographic plane and anisotropically etched regions with sloped [111] crystallographic surface walls isolate adjacent semiconductor elements and/or define the boundaries of junctions and/or resistance regions formed in an epitaxial layer of said semiconductor body.
    Type: Grant
    Filed: April 10, 1975
    Date of Patent: September 7, 1976
    Assignee: Raytheon Company
    Inventors: John L. Mudge, Jerry W. Zimmer, Keith G. Taft