Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: This system and method of for providing a tunable orbital angular momentum system for providing higher order Bessel beams comprising: an acousto-optical deflector configured to receive an input beam, deflect a first portion of the input beam a first deflection angle relative to an axis of propagation and along an optical axis and deflect a second portion of the input beam a second deflection angle relative to the optical axis; a line generator disposed along the optical angle for receiving the first portion and the second portion of the input beam and provide an elliptical Gaussian mean; a log-polar optics assembly disposed along the optical angle for receiving the elliptical Gaussian beam and wrapping the elliptical Gaussian beam with an asymmetric ring; and, a Fourier lens configured to receive the wrapped elliptical Gaussian beam.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

Abstract: Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.

Abstract: Embodiments of process kits for use in plasma process chambers are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the annular body includes an inner surface having a first segment that extends downward, a second segment that extends radially outward from the first segment, a third segment that extends downward from the second segment, a fourth segment that extends radially outward from the third segment, a fifth segment that extends downward from the fourth segment, a sixth segment that extends radially inward from the fifth segment, a seventh segment that extends downward from the sixth segment, and an eighth segment that extends radially inward from the seventh segment.

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

Abstract: Methods and systems are provided to customize a base digital file for a garment according to a user's body measurements and generate a custom digital file for the garment, which may be used in garment production. For example, a system may receive a request to generate a custom-fit garment, customization options, and information regarding a customer's body measurements, retrieve a base digital file for the garment, identify points and edges in the base digital file of the garment, adjust the points and edges according to defined equations that take into account the user's body measurements, generate a custom digital file for the garment, and display a visual representation of the customized garment.

Abstract: Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

Abstract: Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

Abstract: A system may be configured to monitor an amount of a gas species in a processing chamber using Optical Emission Spectrometry. The gas measurement may be provided as feedback to a control process that generates a target setpoint for a gas flow controller into the process chamber. This real-time process may increase/decrease the flow rate of the gas in order to maintain a process deposition mode within a transition region between primarily metallic deposition and primarily compound deposition.

Abstract: This system and method of for providing a tunable orbital angular momentum system for providing higher order Bessel beams comprising: an acousto-optical deflector configured to receive an input beam, deflect a first portion of the input beam a first deflection angle relative to an axis of propagation and along an optical axis and deflect a second portion of the input beam a second deflection angle relative to the optical axis; a line generator disposed along the optical angle for receiving the first portion and the second portion of the input beam and provide an elliptical Gaussian mean; a log-polar optics assembly disposed along the optical angle for receiving the elliptical Gaussian beam and wrapping the elliptical Gaussian beam with an asymmetric ring; and, a Fourier lens configured to receive the wrapped elliptical Gaussian beam.

Abstract: Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.

Abstract: Embodiments of a process shield for use in a process chamber are provided herein. In some embodiments, a process shield for use in a process chamber includes a body having a cylindrical shape, wherein the body includes an upper portion and a lower portion, the upper portion having an outer lip and the lower portion extending downward and radially inward from the upper portion, wherein the outer lip includes a plurality of openings to accommodate fasteners, a plurality of alignment slots extending radially inward from an outer surface of the outer lip, and a notched lower peripheral edge, and wherein a lower surface of the outer lip includes a plurality of grooves.

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, wherein the outwardly extending shelf includes a clamping surface configured to clamp an isolator ring to a chamber body of the PVD chamber, wherein a height of the outwardly extending shelf is about 15 percent to about 40 percent of a height of the clamp body and wherein the clamp body includes a central opening configured to retain a fastener therein.

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion, a target disposed on the central portion, a plurality of recesses formed in the support portion; and a plurality of self-retained low-friction pads partially disposed in the plurality of recesses, wherein each of the plurality of low-friction pads includes a solid body portion, and a self-retaining stem that extends outward from a bottom of the solid body portion, wherein the self-retaining stem includes a first stem portion disposed in the first through-hole portion, and a second stem portion disposed within the second through-hole portion.

Abstract: A device can receive an identification of an environmental model associated with a user navigating a website and receive an identification of an item model associated with an item requested by the user to be shown in connection with the environmental model on a client device. The environmental model could be a body model of the user or of another force like wind. The item model models how the item would move in connection with the environmental model. The device identifies movement associated with the environmental model and generates, based on the environmental model and the item model, frames each having respective data of the item as it would move on the environmental model according to the movement to yield movement key attributes. The device transmits the movement key attributes to the client device for rendering using a client device rendering engine.

Abstract: A method for manufacturing parts or devices using additive manufacturing is provided. The method forms the parts or devices, and also forms a transition layer or transition layers of partially or incompletely sintered powder between a build-plate and/or supports provided on the build-plate, and/or a gap or gaps of unsintered powder, or partially or incompletely sintered powder between the supports and the parts. The transition layer(s) and the gap(s) facilitate separation of the parts or devices from the build-plate or the supports provided on the build-plate.