Patents by Inventor Keith R. Hicks
Keith R. Hicks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11845202Abstract: A microwave heating system includes: a variable-frequency microwave source having a usable bandwidth about a center frequency; a waveguide with an input side connected to the source and an output side terminating in a launch structure; and, a metallic reflector plate facing the launch structure and perpendicular thereto and spaced therefrom at a distance of no more than twice the microwave wavelength at an operative frequency of the microwave source, the reflector plate including a recessed area of a selected size and shape located facing the launch structure so that a material to be treated may be placed between the launch structure and the recessed area for exposure to microwave energy. A related method is also disclosed.Type: GrantFiled: February 17, 2021Date of Patent: December 19, 2023Assignee: Expert Tooling and Automation, LTDInventors: Robert J. Schauer, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Yunchuan Liu, Andrew Bools
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Patent number: 11766833Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.Type: GrantFiled: June 7, 2020Date of Patent: September 26, 2023Assignee: Expert Tooling and Automation, Ltd.Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools, Robert J. Schauer
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Patent number: 11633922Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.Type: GrantFiled: June 7, 2020Date of Patent: April 25, 2023Assignee: Expert Tooling and Automation, Ltd.Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools, Robert J. Schauer
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Patent number: 11633921Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service. A related method is also disclosed.Type: GrantFiled: August 10, 2020Date of Patent: April 25, 2023Assignee: Expert Tooling and Automation, Ltd.Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools, Robert J. Schauer
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Publication number: 20220258384Abstract: A microwave heating system includes: a variable-frequency microwave source having a usable bandwidth about a center frequency; a waveguide with an input side connected to the source and an output side terminating in a launch structure; and, a metallic reflector plate facing the launch structure and perpendicular thereto and spaced therefrom at a distance of no more than twice the microwave wavelength at an operative frequency of the microwave source, the reflector plate including a recessed area of a selected size and shape located facing the launch structure so that a material to be treated may be placed between the launch structure and the recessed area for exposure to microwave energy. A related method is also disclosed.Type: ApplicationFiled: February 17, 2021Publication date: August 18, 2022Inventors: Robert J. Schauer, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Yunchuan Liu, Andrew Bools
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Patent number: 10913212Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service.Type: GrantFiled: March 1, 2018Date of Patent: February 9, 2021Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools
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Publication number: 20200368975Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service. A related method is also disclosed.Type: ApplicationFiled: August 10, 2020Publication date: November 26, 2020Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools, Robert J. Schauer
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Publication number: 20200298503Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.Type: ApplicationFiled: June 7, 2020Publication date: September 24, 2020Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools, Robert J. Schauer
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Publication number: 20200298502Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.Type: ApplicationFiled: June 7, 2020Publication date: September 24, 2020Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools, Robert J. Schauer
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Patent number: 10710313Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.Type: GrantFiled: August 18, 2017Date of Patent: July 14, 2020Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst
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Publication number: 20180257308Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn or waveguide configured to apply the microwave power to a small area to perform spot curing or repair operations involving adhesives and composites. The spot curing may secure components in place for further handling, after which a thermal or oven treatment will cure the remaining adhesive to develop adequate strength for service. A related method is also disclosed.Type: ApplicationFiled: March 1, 2018Publication date: September 13, 2018Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst, Angelo Luciano, Andrew Bools
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Patent number: 10051693Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture includes a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.Type: GrantFiled: June 1, 2015Date of Patent: August 14, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Joseph M. Wander, Zakaryae Fathi, Keith R. Hicks, Clayton R. DeCamillis, Iftikhar Ahmad
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Publication number: 20180126659Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.Type: ApplicationFiled: August 18, 2017Publication date: May 10, 2018Inventors: Iftikhar Ahmad, Keith R. Hicks, Andrew Cardin, Clayton R. DeCamillis, Richard C. Hazelhurst
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Publication number: 20150341991Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.Type: ApplicationFiled: June 1, 2015Publication date: November 26, 2015Inventors: Joseph M. Wander, Zakaryae Fathi, Keith R. Hicks, Clayton R. DeCamillis, Iftikhar Ahmad
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Patent number: 9048270Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.Type: GrantFiled: March 25, 2011Date of Patent: June 2, 2015Inventors: Joseph M. Wander, Zakaryae Fathi, Keith R. Hicks, Clayton R. DeCamillis, Iftikhar Ahmad
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Publication number: 20110226759Abstract: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.Type: ApplicationFiled: March 25, 2011Publication date: September 22, 2011Inventors: Joseph M. Wander, Zakaryae Fathi, Keith R. Hicks, Clayton R. DeCamillis, Iftikhar Ahmad
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Patent number: 8021898Abstract: A materials processing system comprises a thermal processing chamber including a heating source, a first noncontacting thermal measurement device positioned to measure temperature on a first area of the material being processed, and, a second noncontacting thermal measurement device positioned to measure temperature on a second area of the material being processed, the first device being relatively more sensitive to changes in surface emissivity than the second device. By comparing the outputs of the two devices, emissivity changes can be detected and used as a proxy for some physical change in the workpiece and thereby determine when the desired process has been completed. The system may be used to develop a process recipe, or it may be part of a system for real-time process control based on emissivity changes. Applicable processes include heating, annealing, dopant activation, silicide formation, carburization, nitridation, sintering, oxidation, vapor deposition, metallization, and plating.Type: GrantFiled: September 17, 2010Date of Patent: September 20, 2011Assignee: Lambda Technologies, Inc.Inventors: Iftikhar Ahmad, Keith R. Hicks
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Patent number: 7939456Abstract: A microwave heating system comprises a microwave applicator cavity; a microwave power supply to deliver power to the applicator cavity; a dielectric support to support a generally planar workpiece; a dielectric gas manifold to supply a controlled flow of inert gas proximate to the periphery of the workpiece to provide differential cooling to the edge relative to the center; a first temperature measuring device configured to measure the temperature near the center of the workpiece; and, a second temperature measuring device configured to measure the temperature near the edge of the workpiece. The gas flow is controlled to minimize the temperature difference from center to edge, and may be recipe driven or controlled in real time, based on the two temperature measurements. The method is particularly useful for monolithic semiconductor wafers, various semiconducting films on substrates, and dielectric films on semiconducting wafers.Type: GrantFiled: September 17, 2010Date of Patent: May 10, 2011Assignee: Lambda Technologies, Inc.Inventors: Iftikhar Ahmad, Keith R. Hicks
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Publication number: 20110076786Abstract: A materials processing system comprises a thermal processing chamber including a heating source, a first noncontacting thermal measurement device positioned to measure temperature on a first area of the material being processed, and, a second noncontacting thermal measurement device positioned to measure temperature on a second area of the material being processed, the first device being relatively more sensitive to changes in surface emissivity than the second device. By comparing the outputs of the two devices, emissivity changes can be detected and used as a proxy for some physical change in the workpiece and thereby determine when the desired process has been completed. The system may be used to develop a process recipe, or it may be part of a system for real-time process control based on emissivity changes. Applicable processes include heating, annealing, dopant activation, silicide formation, carburization, nitridation, sintering, oxidation, vapor deposition, metallization, and plating.Type: ApplicationFiled: September 17, 2010Publication date: March 31, 2011Inventors: Iftikhar Ahmad, Keith R. Hicks
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Publication number: 20110076787Abstract: A microwave heating system comprises a microwave applicator cavity; a microwave power supply to deliver power to the applicator cavity; a dielectric support to support a generally planar workpiece; a dielectric gas manifold to supply a controlled flow of inert gas proximate to the periphery of the workpiece to provide differential cooling to the edge relative to the center; a first temperature measuring device configured to measure the temperature near the center of the workpiece; and, a second temperature measuring device configured to measure the temperature near the edge of the workpiece. The gas flow is controlled to minimize the temperature difference from center to edge, and may be recipe driven or controlled in real time, based on the two temperature measurements. The method is particularly useful for monolithic semiconductor wafers, various semiconducting films on substrates, and dielectric films on semiconducting wafers.Type: ApplicationFiled: September 17, 2010Publication date: March 31, 2011Inventors: Iftikhar Ahmad, Keith R. Hicks