Patents by Inventor Keith Tatseun WONG
Keith Tatseun WONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11993845Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.Type: GrantFiled: March 4, 2020Date of Patent: May 28, 2024Assignee: Applied Materials, Inc.Inventors: Jong Choi, Christopher Ahles, Andrew C. Kummel, Keith Tatseun Wong, Srinivas D. Nemani
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Patent number: 11993842Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.Type: GrantFiled: November 30, 2022Date of Patent: May 28, 2024Assignees: APPLIED MATERIALS, INC., THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Keith Tatseun Wong, Srinivas D. Nemani, Andrew C. Kummel, James Huang, Yunil Cho
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Publication number: 20230377958Abstract: Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Inventors: Keith Tatseun WONG, Srinivas D. NEMANI, Ellie Y. YIEH
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Publication number: 20230298893Abstract: An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.Type: ApplicationFiled: May 26, 2023Publication date: September 21, 2023Inventors: Keith Tatseun WONG, Thomas Jongwan KWON, Sean KANG, Ellie Y. YIEH
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Patent number: 11756828Abstract: Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.Type: GrantFiled: November 20, 2018Date of Patent: September 12, 2023Assignee: Applied Materials, Inc.Inventors: Keith Tatseun Wong, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 11705337Abstract: An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.Type: GrantFiled: November 26, 2019Date of Patent: July 18, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Keith Tatseun Wong, Thomas Jongwan Kwon, Sean Kang, Ellie Y. Yieh
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Patent number: 11664215Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.Type: GrantFiled: February 26, 2020Date of Patent: May 30, 2023Assignee: Applied Materials, Inc.Inventors: Christopher Ahles, Jong Choi, Andrew C. Kummel, Keith Tatseun Wong, Srinivas D. Nemani
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Publication number: 20230122224Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.Type: ApplicationFiled: November 30, 2022Publication date: April 20, 2023Inventors: Keith Tatseun WONG, Srinivas D. NEMANI, Andrew C. KUMMEL, James HUANG, Yunil CHO
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Patent number: 11542597Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.Type: GrantFiled: June 16, 2020Date of Patent: January 3, 2023Assignees: APPLIED MATERIALS, INC., THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Keith Tatseun Wong, Srinivas D. Nemani, Andrew C. Kummel, James Huang, Yunil Cho
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Publication number: 20220310776Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.Type: ApplicationFiled: March 23, 2021Publication date: September 29, 2022Inventors: Keith Tatseun WONG, Srinivas D. NEMANI, Ellie YIEH, Tony P. CHIANG
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Publication number: 20210375600Abstract: The present disclosure generally relates to a substrate processing chamber, a substrate processing apparatus, and a substrate processing method for self-assembled monolayer (SAM) deposition of low vapor pressure organic molecules (OM) followed by further substrate processing, such as atomic layer deposition.Type: ApplicationFiled: May 28, 2021Publication date: December 2, 2021Inventors: Qiwei Liang, Srinivas D. Nemani, Keith Tatseun Wong, Antony K. Jan
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Publication number: 20210317573Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.Type: ApplicationFiled: June 16, 2020Publication date: October 14, 2021Inventors: Keith Tatseun WONG, Srinivas D. NEMANI, Andrew C. KUMMEL, James HUANG, Yunil CHO
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Patent number: 10957590Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.Type: GrantFiled: October 30, 2019Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Wenhui Wang, Huixiong Dai, Christopher S. Ngai, Liqi Wu, Wenyu Zhang, Yongmei Chen, Hao Chen, Keith Tatseun Wong, Ke Chang
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Patent number: 10916426Abstract: Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500° C. to 1200° C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX2, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te).Type: GrantFiled: May 3, 2019Date of Patent: February 9, 2021Assignee: Applied Materials, Inc.Inventors: Keith Tatseun Wong, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 10847360Abstract: Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.Type: GrantFiled: May 25, 2017Date of Patent: November 24, 2020Assignee: Applied Materials, Inc.Inventors: Keith Tatseun Wong, Sean Kang, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 10818510Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.Type: GrantFiled: January 28, 2019Date of Patent: October 27, 2020Assignee: Applied Materials, Inc.Inventors: Tobin Kaufman-Osborn, Keith Tatseun Wong
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Patent number: 10790183Abstract: Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure is oxidized by a high pressure oxidation process to form a buried oxide layer adjacent the substrate.Type: GrantFiled: May 9, 2019Date of Patent: September 29, 2020Assignee: Applied Materials, Inc.Inventors: Shiyu Sun, Keith Tatseun Wong, Kurtis Leschkies, Namsung Kim, Srinivas Nemani
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Publication number: 20200303183Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.Type: ApplicationFiled: February 26, 2020Publication date: September 24, 2020Inventors: Christopher AHLES, Jong CHOI, Andrew C. KUMMEL, Keith Tatseun WONG, Srinivas D. NEMANI
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Publication number: 20200283898Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.Type: ApplicationFiled: March 4, 2020Publication date: September 10, 2020Inventors: Jong Choi, Christopher Ahles, Andrew C. Kummel, Keith Tatseun Wong, Srinivas D. Nemani
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Publication number: 20200161176Abstract: Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.Type: ApplicationFiled: November 20, 2018Publication date: May 21, 2020Inventors: Keith Tatseun WONG, Srinivas D. Nemani, Ellie Y. Yieh