Patents by Inventor Keizo Hagimoto

Keizo Hagimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor having capacitor between source and drain electrodes
    Patent number: 5650645
    Abstract: A semiconductor device having a field-effect transistor has a MOS capacitor formed on a principal surface of a semiconductor substrate of the semiconductor device, and connecting a first and a second electrodes of the MOS capacitor to a source electrode and a drain electrode, respectively, of the field-effect transistor.
    Type: Grant
    Filed: February 29, 1996
    Date of Patent: July 22, 1997
    Assignee: NEC Corporation
    Inventors: Tsutomu Sone, Toshinori Nishii, Keizo Hagimoto, Yasuhiro Koseki
  • Integrated semiconductor device with temperature sensing circuit and method for operating same
    Patent number: 5500547
    Abstract: A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.
    Type: Grant
    Filed: December 27, 1994
    Date of Patent: March 19, 1996
    Assignee: NEC Corporation
    Inventors: Kazumi Yamaguchi, Masami Sawada, Manabu Yamada, Keizo Hagimoto