Abstract: A device to perform multiple uses with textiles in everyday apparel and commercial textile uses. It is a decorative piece or labeling device for apparel or textiles, a temporary and adjustable fastener for holding onto a single or holding together multiple pieces of material, as well as a temporary alteration tool that can provide a tailored effect. It is an object of my invention to be used as a fastener temporarily engaging and holding sections of material, such as a single layer attaching itself onto the material just like a piece of jewelry on a blouse or holding together overlapped layers on material like on a jacket or scarf, without piercing the material, which can be adjusted or removed at any time easily. Component 2 of the fastener is a matching base providing a contact surface and protruding connection for a matching piece, component 1 that is pressed into place that gently but firmly connects to hold material together.

Abstract: Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self-aligned source resistance.

Abstract: The invention includes methods in which common processing steps are utilized during fabrication of components of a memory array region of a semiconductor substrate and components of a peripheral region proximate the memory array region, and yet the components of the peripheral region are built for different performance characteristics than the components of the memory array region. The methods can include laterally recessing nitride-containing masking structures associated with the peripheral region to a greater extent than nitride-containing masking structures associated with the memory array region, followed by thermal oxidation of the substrate to form dielectric material adjacent the masking structures.

Abstract: Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self align source resistance.

Abstract: Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self align source resistance.

Abstract: Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self align source resistance.

Abstract: Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self align source resistance.

Abstract: Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self align source resistance.

Abstract: Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self-aligned source resistance.

Abstract: Methods and devices are disclosed utilizing a phosphorous doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self aligned source resistance.

Abstract: Methods for measuring the surface area of a top region of a silicon wafer by initially depositing a monolayer of hexamethyldisilizane over the surface area of the silicon wafer. The silicon wafer is then positioned within a vacuum environment. Next, oxygen is introduced into the vacuum chamber so that the HMDS substantially reacts with the oxygen to form products such as carbon dioxide and water. At least one of the water and the carbon dioxide are measured from the known volume of the vacuum chamber. Based on the amount of product formed, the amount of HMDS covering the surface area is determined. Finally, from the amount of HMDS calculated to be originally positioned on the surface area, a value for the surface area is determined.

Abstract: Methods for measuring the surface area of a top region of a silicon wafer by initially depositing a monolayer of hexamethyldisilizane over the surface area of the silicon wafer. The silicon wafer is then positioned within a vacuum environment. Next, oxygen is introduced into the vacuum chamber so that the HMDS substantially reacts with the oxygen to form products such as carbon dioxide and water. At least one of the water and the carbon dioxide are measured from the known volume of the vacuum chamber. Based on the amount of product formed, the amount of HMDS covering the surface area is determined. Finally, from the amount of HMDS calculated to be originally positioned on the surface area, a value for the surface area is determined.