Patents by Inventor Kelvin G. Lynn

Kelvin G. Lynn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8835840
    Abstract: Micromachined holes in stacks of silicon wafers can be used to define high aspect ratio charged particle storage volumes. Each wafer can define a section of a tubular trap, and electric fields in each wafer can be controlled independently so that charged particles can be stored and shuttled among the sections.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: September 16, 2014
    Assignee: Washington State University
    Inventors: Kelvin G. Lynn, Marc H. Weber
  • Publication number: 20080151954
    Abstract: In a method of forming an Nd:YVO4 laser crystal, a melt of Nd:YVO4 in a vacuum is provided and an Nd:YVO4 seed crystal is provided in the vacuum with its c-axis oriented perpendicular to a surface of the melt. While in the vacuum, Nd:YVO4 from the melt is caused to adhere to the Nd:YVO4 seed crystal thereby forming an Nd:YVO4 boule with its c-axis oriented perpendicular to the surface of the melt. A portion of the boule can be removed therefrom to become an Nd:YVO4 laser crystal having no sub-grain boundaries and/or ghost veils in a cross section thereof perpendicular to the c-axis. This c-axis grown Nd:YVO4 crystal can be used as the lasing element of a laser.
    Type: Application
    Filed: July 12, 2007
    Publication date: June 26, 2008
    Applicant: II-VI Incorporated
    Inventors: Kelvin G. Lynn, Elgin E. Eissler, Xiaoming Li
  • Patent number: 7192481
    Abstract: A radiation detector made from a compound, or alloy, comprising CdxZn1?xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion. The radiation detector exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.
    Type: Grant
    Filed: June 10, 2003
    Date of Patent: March 20, 2007
    Assignee: II-VI Incorporated
    Inventors: Csaba Szeles, Kelvin G. Lynn
  • Publication number: 20040212280
    Abstract: A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.
    Type: Application
    Filed: May 18, 2004
    Publication date: October 28, 2004
    Inventors: Leon J. Radziemski, Kelvin G. Lynn
  • Patent number: 6737789
    Abstract: A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.
    Type: Grant
    Filed: December 2, 2002
    Date of Patent: May 18, 2004
    Inventors: Leon J. Radziemski, Kelvin G. Lynn
  • Publication number: 20030137221
    Abstract: A force activated electrical power generator is provided using piezoelectric elements of preferred lead-magnesium-niobate lead titanate (PMN-PT). The circuitry is in preferred versions completely passive generating all power needed. Some circuitry limits voltage across the elements and provides a return charge channel to prevent depolarization. Transformers can be used to increase the output voltage and efficiency. Rectifiers are shown to rectify the output to a single polarity. Filtering, regulation and other conditioning components are also shown. The output from the generator and circuitry can store the electrical charge, such as in a capacitor and/or battery.
    Type: Application
    Filed: December 2, 2002
    Publication date: July 24, 2003
    Inventors: Leon J. Radziemski, Kelvin G. Lynn
  • Patent number: 5274689
    Abstract: A source of gamma rays (a photon beam) at a single energy produced by the single-quantum annihilation of accelerated positrons with electrons of a target element. The photons are emitted predominantly in the forward direction and are accompanied by background radiation which can be differentially suppressed. The energy of the photons is determined by varying the energy of incident positrons. The photon beam is usable in materials research and analysis, medical diagnosis and therapy, and numerous other fields.
    Type: Grant
    Filed: December 10, 1992
    Date of Patent: December 28, 1993
    Assignees: University of Puerto Rico, Brookhaven National Laboratory
    Inventors: Jose C. Palathingal, Kelvin G. Lynn, Palakkal Asoka-Kumar
  • Patent number: 5200619
    Abstract: A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained.
    Type: Grant
    Filed: October 4, 1991
    Date of Patent: April 6, 1993
    Assignee: Associated Universities, Inc.
    Inventors: Palakkal P. V. Asoka kumar, Kelvin G. Lynn