Patents by Inventor Kenichi Nagata
Kenichi Nagata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12001134Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains it as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2?range of 35° to 45° to an average value of an intensity of the diffracted light in a 28 range of 55° to 60° measured using an XRD method with a CuK? ray, upon being irradiated with the EUV light with an incident angle of ?, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.Type: GrantFiled: November 22, 2023Date of Patent: June 4, 2024Assignee: AGC Inc.Inventors: Yuya Nagata, Daijiro Akagi, Kenichi Sasaki, Hiroaki Iwaoka
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Publication number: 20240160096Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.Type: ApplicationFiled: January 24, 2024Publication date: May 16, 2024Applicant: AGC Inc.Inventors: Yuya NAGATA, Daijiro AKAGI, Kenichi SASAKI, Hiroaki IWAOKA
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Patent number: 11972611Abstract: A controller is provided that is configured to perform: obtaining information about a condition for an image that is provided to a user, and that corresponds to a preference of the user; specifying at least one predetermined position at which an image satisfying the condition can be taken; and generating a command for a moving object to move to the predetermined position and to take an image, and transmitting the command to the moving object.Type: GrantFiled: June 29, 2021Date of Patent: April 30, 2024Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Satoshi Komamine, Yurika Tanaka, Kenichi Yamada, Ryuichi Kamaga, Ai Miyata, Yu Nagata, Shintaro Matsutani
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Publication number: 20240117346Abstract: In an embodiment, an object of the present invention is to provide a double-stranded nucleic acid complex having a novel structure. In an embodiment, the present invention relates to a nucleic acid complex comprising a first nucleic acid strand and a second nucleic acid strand, wherein said first nucleic acid strand: (1) is capable of hybridizing to at least a part of a target transcriptional product; (2) has an antisense effect on the target transcriptional product; and (3) is a gapmer comprising a central region, and a 5? wing region and a 3? wing region, said second nucleic acid strand comprises at least one sugar-unmodified central region (first exposed region) consisting of one sugar-unmodified ribonucleoside or two or three contiguous sugar-unmodified ribonucleosides linked by an internucleoside bond, which is or are complementary to a part of said first nucleic acid strand, and said first nucleic acid strand is annealed to said second nucleic acid strand.Type: ApplicationFiled: October 9, 2020Publication date: April 11, 2024Applicants: National University Corporation Tokyo Medical and Dental University, Takeda Pharmaceutical Company LimitedInventors: Takanori Yokota, Tetsuya Nagata, Hiroki Yamada, Hideki Furukawa, Takatoshi Yogo, Kenichi Miyata, Akio Uchida, Naoki Tomita
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Publication number: 20240094622Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains Ir as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2? range of 35° to 45° to an average value of an intensity of the diffracted light in a 2? range of 55° to 60° measured using an XRD method with a CuK? ray, upon being irradiated with the EUV light with an incident angle of ?, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Applicant: AGC Inc.Inventors: YUYA NAGATA, Daijiro Akagi, Kenichi Sasaki, Hiroaki Iwaoka
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Publication number: 20230027317Abstract: Provided is an animal model that can replicate a disease state of human AD. A non-human primate model animal of Alzheimer's disease includes the PSEN1 gene in which a site related to splicing of exon 9 is made deficient.Type: ApplicationFiled: December 18, 2020Publication date: January 26, 2023Inventors: Erika SASAKI, Kenya SATO, Wakako KUMITA, Hiroki SASAGURI, Takaomi SAIDO, Kenichi NAGATA, Takashi YAMAMOTO, Tetsushi SAKUMA
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Patent number: 10557195Abstract: A sputtering target and/or a coil disposed at a periphery of a plasma-generating region for confining plasma are provided. The target and/or coil has a surface to be eroded having a hydrogen content of 500 ?L/cm2 or less. In dealing with reduction in hydrogen content of the surface of the target and/or coil, a process of producing the target and/or coil, in particular, conditions for heating the surface of the target and/or coil, which is believed to be a cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, a target and/or coil is provided that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity. A method of producing the target and/or the coil is also provided.Type: GrantFiled: September 25, 2017Date of Patent: February 11, 2020Assignee: JX NIPPON MINING & METALS CORPORATIONInventors: Kenichi Nagata, Nobuhito Makino
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Patent number: 10276356Abstract: A copper alloy sputtering target having a composition comprising 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu and unavoidable impurities, wherein a compositional variation in a plane of the sputtering target is within 20%. The present invention provides a copper alloy sputtering target capable of forming a semiconductor element wiring material, particularly a stable and uniform seed layer which is free of aggregation during copper electroplating, and which has superior sputter deposition properties, and a semiconductor element wiring formed using the copper alloy sputtering target.Type: GrantFiled: February 28, 2014Date of Patent: April 30, 2019Assignee: JX Nippon Mining & Metals CorporationInventors: Tomio Otsuki, Kenichi Nagata
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Publication number: 20190085442Abstract: Provided is a sputtering target formed from copper or a copper alloy, and the sputtering target contains either argon or hydrogen, or both, each in an amount of 1 wtppm or more and 10 wtppm or less. An object of the embodiment of the present invention is to provide a copper or copper alloy sputtering target which is capable of stably maintaining discharge even under conditions such as low pressure and low gas flow rate where it is difficult to continuously maintain sputtering discharge.Type: ApplicationFiled: March 7, 2017Publication date: March 21, 2019Inventors: Tomio Otsuki, Kenichi Nagata, Yasushi Morii
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Patent number: 9951412Abstract: Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 ?L/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.Type: GrantFiled: July 27, 2011Date of Patent: April 24, 2018Assignee: JX Nippon Mining & Metals CorporationInventors: Kenichi Nagata, Nobuhito Makino
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Patent number: 9909196Abstract: A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 ?m or less, and a number of precipitates is 500 precipitates/mm2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.Type: GrantFiled: February 19, 2014Date of Patent: March 6, 2018Assignee: JX Nippon Mining & Metals CorporationInventors: Kenichi Nagata, Tomio Otsuki
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Publication number: 20180010241Abstract: A sputtering target and/or a coil disposed at a periphery of a plasma-generating region for confining plasma are provided. The target and/or coil has a surface to be eroded having a hydrogen content of 500 ?L/cm2 or less. In dealing with reduction in hydrogen content of the surface of the target and/or coil, a process of producing the target and/or coil, in particular, conditions for heating the surface of the target and/or coil, which is believed to be a cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, a target and/or coil is provided that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity. A method of producing the target and/or the coil is also provided.Type: ApplicationFiled: September 25, 2017Publication date: January 11, 2018Inventors: Kenichi Nagata, Nobuhito Makino
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Patent number: 9704695Abstract: A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.Type: GrantFiled: September 12, 2012Date of Patent: July 11, 2017Assignee: JX Nippon Mining & Metals CorporationInventors: Kenichi Nagata, Tomio Otsuki, Takeo Okabe, Nobuhito Makino, Atsushi Fukushima
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Patent number: 9632454Abstract: A cartridge capable of preventing careless damage or the like of a memory unit and an image forming apparatus including the cartridge are provided.Type: GrantFiled: February 22, 2016Date of Patent: April 25, 2017Assignee: Sharp Kabushiki KaishaInventor: Kenichi Nagata
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Publication number: 20160291521Abstract: A cartridge capable of preventing careless damage or the like of a memory unit and an image forming apparatus including the cartridge are provided.Type: ApplicationFiled: February 22, 2016Publication date: October 6, 2016Inventor: Kenichi NAGATA
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Publication number: 20150354047Abstract: A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 ?m or less, and a number of precipitates is 500 precipitates/mm2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.Type: ApplicationFiled: February 19, 2014Publication date: December 10, 2015Inventors: Kenichi Nagata, Tomio Otsuki
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Patent number: 9165750Abstract: A high purity copper-manganese alloy sputtering target containing 0.05 to 20 wt % of Mn and, excluding additive elements, remainder being Cu and unavoidable impurities, wherein the target contains 0.001 to 0.06 wtppm of P and 0.005 to 5 wtppm of S, and further contains Ca and Si, and a total content of P, S, Ca, and Si is 0.01 to 20 wtppm. The incorporation of appropriate amounts of Mn as well as Ca, P, Si, and S in copper improves the machinability that is required in the stage of producing a target to facilitate the manufacture (workability) of the target, improves the smoothness of the target surface, and inhibits the generation of particles during sputtering. Thus, provided is a high purity copper-manganese alloy sputtering target which is particularly useful for improving the yield and reliability of semiconductor products that progress toward miniaturization and integration.Type: GrantFiled: January 4, 2013Date of Patent: October 20, 2015Assignee: JX Nippon Mining & Metals CorporationInventors: Kenichi Nagata, Tomio Otsuki, Takeo Okabe, Nobuhito Makino, Atsushi Fukushima
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Publication number: 20150279638Abstract: A copper alloy sputtering target having a composition comprising 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu and unavoidable impurities, wherein a compositional variation in a plane of the sputtering target is within 20%. The present invention provides a copper alloy sputtering target capable of forming a semiconductor element wiring material, particularly a stable and uniform seed layer which is free of aggregation during copper electroplating, and which has superior sputter deposition properties, and a semiconductor element wiring formed using the copper alloy sputtering target.Type: ApplicationFiled: February 28, 2014Publication date: October 1, 2015Inventors: Tomio Otsuki, Kenichi Nagata
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Patent number: 9090970Abstract: Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.Type: GrantFiled: September 6, 2012Date of Patent: July 28, 2015Assignee: JX Nippon Mining & Metals CorporationInventors: Kenichi Nagata, Tomio Otsuki, Takeo Okabe, Nobuhito Makino, Atsushi Fukushima
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Publication number: 20140318953Abstract: A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.Type: ApplicationFiled: September 12, 2012Publication date: October 30, 2014Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Kenichi Nagata, Tomio Otsuki, Takeo Okabe, Nobuhito Makino, Atsushi Fukushima