Abstract: A liquid discharge apparatus includes a discharging unit configured to be capable of discharging a plurality of kinds of liquids onto a medium, and a waste liquid tank including a storage part configured to store a waste liquid of the liquid. The waste liquid tank includes a first inflow port and a second inflow port from which the waste liquid flows into the storage part, and a restriction portion located between the first inflow port and the second inflow port, and configured to restrict movement of the waste liquid in the storage part.

Abstract: Provided are a pasty composition for aluminum brazing which has excellent coating properties, is capable of attaining favorable dimensional accuracy of products obtained after brazing, causes less erosion, and allows favorable external appearances of brazed portions (fillets); an aluminum-containing member coated with the pasty composition for aluminum brazing; and a method, using the pasty composition for aluminum brazing, for brazing the aluminum-containing members. The pasty composition for aluminum brazing contains an aluminum-containing powder. In a case where on a cumulative grading curve of the aluminum-containing powder, a particle diameter D ?m which corresponds to a Q volume % is indicated as D(Q) ?m, D(50) ?m is greater than or equal to 20 ?m and less than or equal to 150 ?m; and D(90) ?m/D(10) ?m is less than or equal to 5. A mass percentage of particles, in the aluminum-containing powder, which pass through a screen mesh having an opening of 45 ?m is less than or equal to 50%.

Abstract: Provided are a paste composition capable of achieving a BSF effect which is equivalent to or greater than a conventionally achieved BSF effect even when used in either case where a thin back surface electrode layer is formed on a thick silicon semiconductor substrate or case where a thin back surface electrode layer is formed on a thin silicon semiconductor substrate and, when used in a case where a thin back surface electrode layer is formed on a thin silicon semiconductor substrate, not only capable of achieving a BSF effect which is equivalent to or greater than a conventionally achieved BSF effect, but also capable of more suppressing deformation of the silicon semiconductor substrate after being fired, than in a case where the conventional paste composition is used in order to form a thin back surface electrode layer; and a solar cell element comprising an electrode formed by using the paste composition.

Abstract: Provided are a pasty composition for aluminum brazing which has excellent coating properties, is capable of attaining favorable dimensional accuracy of products obtained after brazing, causes less erosion, and allows favorable external appearances of brazed portions (fillets); an aluminum-containing member coated with the pasty composition for aluminum brazing; and a method, using the pasty composition for aluminum brazing, for brazing the aluminum-containing members. The pasty composition for aluminum brazing contains an aluminum-containing powder. In a case where on a cumulative grading curve of the aluminum-containing powder, a particle diameter D ?m which corresponds to a Q volume % is indicated as D(Q) ?m, D(50) ?m is greater than or equal to 20 ?m and less than or equal to 150 ?m; and D(90) ?m/D(10) ?m is less than or equal to 5. A mass percentage of particles, in the aluminum-containing powder, which pass through a screen mesh having an opening of 45 ?m is less than or equal to 50%.

Abstract: A flux-containing composition for brazing aluminum containing a fluoride flux, a binder of an alkyd resin, a mixture of an acrylic resin and a butyl rubber (or a petroleum resin), and/or a polyethylene resin, an organic solvent, and optionally a metallic powder for brazing is easy for handling and plastic working of a product coated with it, gives brazed areas (fillets) of good appearance, has low cost and better operating environment, and is capable of application to members having complicated shapes.

Abstract: A flux composition for brazing aluminum, comprising a fluoride flux, at least one selected from a butyl rubber and a petroleum resin, and a solvent. The novel flux composition has excellent processing properties and provides brazed areas (fillets) with good appearance.

Abstract: A flux-containing composition for brazing aluminum comprising:

Abstract: A flux composition for brazing aluminum, comprising a fluoride flux, at least one selected from a butyl rubber and a petroleum resin, and a solvent. The novel flux composition has excellent processing properties and provides brazed areas (fillets) with good appearance.

Abstract: To turn off an output transistor and generate an alarm whenever a load driven by the output transistor is shorted or opened, the abnormality detection alarm circuit comprises a short detection circuit; an open detection circuit; a delay circuit; an output transistor driving circuit; and an alarm circuit. The delay circuit generates a delayed abnormality signal after the short or open detection circuit has kept generating an abnormal signal beyond a predetermined time. Further, a latch circuit is incorporated, to automatically returning the output transistor driving circuit and the alarm circuit to the normal status immediately after the abnormality has been removed.

Abstract: An output circuit comprises first and second transistors of opposite conductivity type supplied with an input signal. The collector electrodes of the first and the second transistors are connected to pull-up and pull-down transistors to drive them.

Abstract: In an output driver semiconductor circuit, a protection circuit is used to protect the output NPN transistor from being destroyed. The protection circuit comprises an excessive current detector for detecting an excessive collector current of the output NPN transistor, an excessive temperature detector for detecting an excessive temperature of the output transistor, and an OR gate for taking a logical sum of output signals of the detectors. According to the output signal of the OR gate, a base current of the control NPN transistor is controlled, so that a base current of the output transistor is kept below a predetermined value.

Abstract: A detection circuit detects the ON-stage of the transistor at the post-stage of the output circuit. A base current-supply circuit is switched to the ON-state, according to the detection output of the detection circuit, so that a current is supplied from the supply-circuit to the base of the transistor at the pre-stage of the output circuit.

Abstract: A multi-colored recording apparatus comprising a carriage disposed to be movable in the width direction and having a single wire hammer, a ribbon cassette having a plurality of different colored ribbons extending an effective width of the recording sheet, a driving mechanism for causing the ribbon cassette to rotate and bring one colored ribbon in position between the hammer and recording sheet for effecting recording and move the cassette away from the recording sheet after recording, wherein the recorded data is advantageously readily read without interference of the cassette with the reading, and display for displaying a bar graph for the analog signals as represented by the different colored ribbons, wherein the use of only a single hammer with the movable cassette containing the different colored ribbons extending the effective width of the recording sheet provides a compact and light apparatus.

Abstract: There is disclosed a circuit for reversing an electric current flow comprising a motor, a circuit formed of a first transistor at a power source V.sub.CC side and a third transistor at the ground side which are connected in series, a circuit formed of a second transistor at the power source V.sub.CC side and a fourth transistor at the ground side which are connected in series, the junction of the first and third transistors being connected to one terminal of the motor and the junction of the second and fourth transistors being connected to the other terminal of the motor, and a pulse generator for producing an output signal which delays the turn-on timing of the third or fourth transistor until the state of the first or second transistor has been changed from an on-state to an off-state.